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Wyszukujesz frazę "Moskvin, P.P." wg kryterium: Autor

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    Wyświetlanie 1-4 z 4
    Tytuł:
    Modelling of thin Si layers growth on partially masked Si substrate
    Autorzy:
    Gułkowski, S.
    Olchowik, J.M.
    Jóźwik, I.
    Moskvin, P.P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933182.pdf
    Data publikacji:
    2008
    Wydawca:
    Politechnika Gdańska
    Tematy:
    epitaxial lateral overgrowth
    liquid-phase epitaxial growth
    computer simulations
    Opis:
    This paper presents a numerical simulation of epitaxial lateral overgrowth of silicon layers from the liquid phase of an Sn solvent. A two-dimensional diffusion equation has been solved and the concentration profiles of Si in a Si-Sn rich solution during the growth have been constructed. The epilayer thickness and width have been obtained from the concentration near the interface.
    Źródło:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2008, 12, 1-2; 121-126
    1428-6394
    Pojawia się w:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelling of the interface evolution during Si layer growth on a partially masked substrate
    Autorzy:
    Gulkowski, S.
    Olchowik, J.
    Cieślak, K.
    Moskvin, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934033.pdf
    Data publikacji:
    2011
    Wydawca:
    Politechnika Gdańska
    Tematy:
    epitaxial lateral overgrowth
    liquid-phase epitaxial growth
    computer simulations
    Opis:
    High-quality thin Si layers obtained from the solution by epitaxial lateral overgrowth (ELO) can play a crucial role in photovoltaic applications. The laterally overgrown parts of the layer are characterized by a lower dislocation density than that of the substrate. The height and width of the layer depend on several factors, such as the technological conditions of liquid phase expitaxy (LPE), growth temperature, cooling rate and the geometry of the system (mask filling factor). Therefore, it is crucial to find the optimal set of technological parameters in order to obtain very thin structures with a maximum width (high aspect ratio). This paper presents a computational study of Si epilayer growth on a line-pattern masked silicon substrate from Si-Sn rich solution. To solve this problem, a mixed Eulerian-Lagrangian approach was applied. The concentration profile was calculated by solving the two-dimensional diffusion equation with appropriate boundary conditions. The growth velocity was determined on the basis of gradients of concentration in the border of the interface. Si interface evolution from the opened window was demonstrated.
    Źródło:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2011, 15, 1; 91-98
    1428-6394
    Pojawia się w:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    New approach to the determination of phase equilibrium in the Zn-Te system
    Autorzy:
    Moskvin, P.
    Olchowik, J.
    Olchowik, G.
    Zdyb, A.
    Gulkowski, S.
    Sadowski, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934011.pdf
    Data publikacji:
    2011
    Wydawca:
    Politechnika Gdańska
    Tematy:
    phase equilibria
    solubility
    liquid phase epitaxy
    II-VI semiconductor compound
    Opis:
    The polyassociative model of the liquid phase was applied to describe the phase equilibrium in the Zn-Te system. The thermodynamic functions describing the formation of liquid associates were obtained, taking into account the experimental data on the p-T-x equilibrium in the system. The model of polyassociative solutions with the parameters obtained in this work satisfactorily describes the p-T-x diagram of the system. The numerical results of the analysis of the phase equilibrium confirmed the possibility of applying the polyassociative model to the Zn-Te system in a wide temperature range.
    Źródło:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2011, 15, 2; 209-217
    1428-6394
    Pojawia się w:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Polyassociative model of A2B6 semiconductor melt and p-T-x phase equilibria in Zn-Cd-Te system
    Autorzy:
    Moskvin, P.
    Antonov, M.
    Olchowik, G.
    Olchowik, J.
    Zdyb, A.
    Gulkowski, S.
    Sadowski, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934030.pdf
    Data publikacji:
    2011
    Wydawca:
    Politechnika Gdańska
    Tematy:
    phase equilibria
    solubility
    liquid phase epitaxy
    semiconducting II-VI materials
    Opis:
    This work presents a numerical analysis of p-T-x phase equilibrium in the Zn-Cd-Te ternary system in the framework of the polyassociative solution model. On the basis of the experimental data on p-T-x phase equilibrium in the ternary system, thermodynamic functions describing the formation of liquid associates were found. It was shown that the results of the mixing of components in the Zn-Cd-Te ternary melt are related to the occurrence of ZnCdTe and ZnCdTe3 associates. Dissociation parameters of these complexes were calculated and subsequently used in order to efficiently describe p-T-x phase equilibrium of the system in a wide temperature range.
    Źródło:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk; 2011, 15, 1; 121-130
    1428-6394
    Pojawia się w:
    TASK Quarterly. Scientific Bulletin of Academic Computer Centre in Gdansk
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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