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    Wyświetlanie 1-4 z 4
    Tytuł:
    Megagauss Cyclotron Resonance and Quantum Hall Effect of 2D Electron Gas in HgCdMnTe
    Autorzy:
    Grabecki, G.
    Takeyama, S.
    Dietl, T.
    Takamasu, T.
    Shimamotο, Y.
    Miura, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933749.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.25.Hc
    73.50.Fq
    73.20.Dx
    73.40.Lq
    Opis:
    Two-dimensional electron gas adjacent to a grain boundary in bicrystal of narrow-gap semiconductor p- Hg$\text{}_{0.79}$Cd$\text{}_{0.19}$Mn$\text{}_{0.02}$Te has been studied under ultra strong impulse magnetic fields (up to 140 T). Both cyclotron resonance and quantum Hall effect are measured for the same samples. The values of the resonance fields point to strong nonparabolicity. A broadening of the line is interpreted in terms of an intersubband mixing that occurs for the upper Landau level. A steep increase in the linewidth in the field range 20-30 T, which coincides with a strong decrease in the Hall resistance is assigned to the field-induced metal-insulator transition in our system.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 731-734
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hight-Field Submillimeter Magneto-Spectroscopy on Hg(Fe)Se
    Autorzy:
    Portugall, O.
    Von Ortenberg, M.
    Yokoi, H.
    Takeyama, S.
    Miura, N.
    Van Bockstal, L.
    Herlach, F.
    Dobrowolski, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1886979.pdf
    Data publikacji:
    1991-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Fs
    Opis:
    Magnetooptical phenomena in the zero-gap semimagnetic semiconductor Hg(Fe)Se are studied by various techniques in pulsed magnetic fields up to 150 T. Microscopical parameters are estimated in combination with results obtained from transport and magnetization measurements.
    Źródło:
    Acta Physica Polonica A; 1991, 79, 2-3; 363-367
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Time-Resolved and Near-Field Scanning Optical Microscopy Study on Porphyrin J-Aggregate
    Autorzy:
    Miura, A.
    Matsumura, K.
    Su, X.
    Tamai, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1993153.pdf
    Data publikacji:
    1998-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.47.+p
    Opis:
    Water-soluble porphyrin, 5,10,15,20-tetraphenyl- 21H,23H-porphine-tetrasulfonic acid (TPPS), forms J-aggregate in aqueous solution depending on experimental conditions such as pH, dye concentration, and/or ionic strength. The steady-state fluorescence and picosecond single-photon timing spectroscopy were applied for protonated monomer and J-aggregate in aqueous solution and in thin films to reveal the dynamics in the S$\text{}_{2}$ and S$\text{}_{1}$ states. The S$\text{}_{2}$ fluorescence spectra from the protonated monomer and J-aggregate were observed in addition to the normal S$\text{}_{1}$ fluorescence. The lifetime of the S$\text{}_{2}$ state was estimated to be ≈5 ps for J-aggregate, whereas the lifetime is shorter than 1 ps for protonated TPPS monomer. The mesoscopic structures of J-aggregate in thin film with and without polymer on the glass surface were examined by scanning near-field optical microscopy. With the surface topography and scanning near-field optical microscopy transmission images, TPPS J-aggregate was found to form a long and narrow tube-like structure which has a few μm length, 0.2-0.5 μm width, and 5-30 nm height. An unidirectional orientation of the structure was also found, which may be originated from the spin-coating process.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 5-6; 835-846
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Variation Analysis of CMOS Technologies Using Surface-Potential MOSFET Model
    Autorzy:
    Mattausch, H. J.
    Yumisaki, A.
    Sadachika, N.
    Kaya, A.
    Johguchi, K.
    Koide, T.
    Miura-Mattausch, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/308251.pdf
    Data publikacji:
    2009
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    compact model
    fabrication inaccuracy
    field-effect transistor
    macroscopic
    microscopic
    potential at channel surface
    silicon
    within wafer
    Opis:
    An analysis of the measured macroscopic withinwafer variations for threshold voltage (Vth) and on-current (Ion) over several technology generations (180 nm, 100 nm and 65 nm) is reported. It is verified that the dominant microscopic variations of the MOSFET device can be extracted quantitatively from these macroscopic variation data by applying the surface-potential compact model Hiroshima University STARC IGFET model 2 (HiSIM2), which is presently brought into industrial application. Only a small number of microscopic parameters, representing substrate doping (NSUBC), pocket-implantation doping (NSUBP), carrier-mobility degradation due to gate-interface roughness (MUESR1) and channel-length variation during the gate formation (XLD) are found sufficient to quantitatively reproduce the measured macroscopic within-wafer variations of Vth and Ion for all channel length Lg and all technology generations. Quantitative improvements from 180 nm to 65 nm are confirmed to be quite large for MUESR1 (about 70%) and Lmin(XLD) (55%) variations, related to the gate-oxide interface and the gate-stack structuring, respectively. On the other hand, doping-related technology advances, which are reflected by the variation magnitudes of NSUBC (30%) and NSUBP (25%), are found to be considerably smaller. Furthermore, specific combinations of extreme microscopic parameter-variation values are able to represent the boundaries of macroscopic fabrication inaccuracies for Vth and Ion. These combinations are found to remain identical, not only for all Lg of a given technology node, but also for all investigated technologies with minimum Lg of 180 nm, 100 nm and 65 nm.
    Źródło:
    Journal of Telecommunications and Information Technology; 2009, 4; 37-44
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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