Autor: Missous, M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Pressure Dependence of the Schottky Barrier Heights in Al/AlGaAs Junctions
Autorzy:: Dobaczewski, L.
Langer, J. M.
Missous, M.
Powiązania:: https://bibliotekanauki.pl/articles/1929743.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.30.+y
73.40.Kp
73.20.Hb
Opis:: The influence of hydrostatic pressure up to 8 kbar on the barrier height of epitaxially MBE-grown Al on AlGaAs metal-semiconductor junctions is reported. The pressure change of the Schottky barrier on n-type AlGaAs is the same as that of the energy gap (for both direct and indirect-gap AlGaAs compositions), while for p-type AlGaAs it is negligible. This result is in direct conflict with a class of models of the Schottky barrier formation based on a concept of a semiconductor neutrality level alignment with the metal Fermi level.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 741-744
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Molecular Beam Epitaxy of Al$\text{}_{x}$Ga$\text{}_{1-x}$Sb and Al$\text{}_{x}$Ga$\text{}_{1-x}$As: New Donor Doping Sources
Autorzy:: Dobaczewski, L.
Missous, M.
Singer, K. E.
Żytkiewicz, Z. R.
Powiązania:: https://bibliotekanauki.pl/articles/1929771.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.55.Bd
61.50.Cj
71.55.Eq
Opis:: The first results obtained with the use of Ga$\text{}_{2}$S$\text{}_{3}$ and Ga$\text{}_{2}$Se$\text{}_{3}$ compounds as sources of donor elements for molecular beam epitaxy of Al$\text{}_{x}$Ga$\text{}_{1-x}$Sb (0 ≤ x ≤ 1) and Al$\text{}_{x}$Ga$\text{}_{1-x}$As (0 ≤ x ≤ 0.4) are reported. In GaAs free electron concentrations obtained when incorporating the donors from these sources can be easily controlled in the range of three orders of magnitude. For Al$\text{}_{x}$Ga$\text{}_{1-x}$Sb it was possible to compensate the high concentration of native acceptors and to obtain n-type of conductivity.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 826-828
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: On Subband Mobilities Observed in δ-doped AlGaAs/GaAs Quantum Wells and GaAs Layers
Autorzy:: Dobaczewski, L.
Maude, D. K.
Missous, M.
Portal, J. C.
Powiązania:: https://bibliotekanauki.pl/articles/1931958.pdf
Data publikacji:: 1995-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.25.Hc
71.55.Eq
73.20.Dx
Opis:: Electronic transport phenomena in molecular beam epitaxy grown silicon δ-doped AlGaAs/GaAs quantum wells and GaAs layers were investigated. Observations of the Shubnikov-de Haas oscillations allowed to deduce the redistribution of electrons among energy subbands formed by V-shaped and rectangular wells for GaAs layers and the AlGaAs/GaAs quantum wells, respectively. In both cases the effects of illumination upon individual sub-band mobilities and carrier concentrations were studied and the manifestation of the DX centres was demonstrated.
Źródło:: Acta Physica Polonica A; 1995, 87, 1; 201-204
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Hole-Related Electrical Activity of InAs/GaAs Quantum Dots
Autorzy:: Kruszewski, P.
Dobaczewski, L.
Markevich, V.
Mitchell, C.
Missous, M.
Peaker, A.
Powiązania:: https://bibliotekanauki.pl/articles/1811950.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.21.La
79.40.+z
Opis:: We present the hole-related electrical activity of the InAs quantum dots embedded in the n-type GaAs. We performed our experiments with the use of the Laplace and conventional deep level transient spectroscopies combined with the above GaAs band-gap illumination. We observed that depending on temperature and electric field the hole emission process is an interplay between the pure thermal emission and tunnelling processes. The tunnelling was quantitatively described by a simple model of the potential barrier.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1201-1206
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Formation of the DX State by Donors in Al$\text{}_{x}$Ga$\text{}_{1-x}$As - Experiment
Autorzy:: Dobaczewski, L.
Kaczor, P.
Missous, M.
Żytkiewicz, Z. R.
Dobosz, D.
Peaker, A. R.
Powiązania:: https://bibliotekanauki.pl/articles/1924251.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.38.+i
71.55.Eq
78.50.Ge
Opis:: A high-resolution Laplace-transform deep level transient spectroscopy was used to study electron emission from the DX centres related to group IV and VI donor elements in AlGaAs. This provides the experimental evidence that substitutional-interstitial atom motion is responsible for DX behaviour and for the associated metastability effects.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 905-907
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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