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Wyszukujesz frazę "Mironov, O. A." wg kryterium: Autor

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    Wyświetlanie 1-11 z 11
    Tytuł:
    Anomalous Galvanomagnetic Effects in InSb Thin Films with Superconducting Lead Inclusions
    Autorzy:
    Mironov, O. A.
    Nashchekina, O. N.
    Oszwaldowski, M.
    Berus, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1928271.pdf
    Data publikacji:
    1993-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.My
    74.50.+r
    Opis:
    We report on the first experimental observations of an anomalous increase in the resistance of a semiconductor-super conductor contact in the vicinity of the critical temperature T$\text{}_{c}$. The effect is found in lead-doped InSb thin films having inclusions of lead of 1-3 μm in diameter: The observed effect can be a model that explains similar resistance increase observed sometimes in the high T$\text{}_{c}$ superconductors.
    Źródło:
    Acta Physica Polonica A; 1993, 83, 2; 227-230
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Study of MBE Grown Undoped Si-Si$\text{}_{1-x}$Ge$\text{}_{x}$/Si Superlattices
    Autorzy:
    Gnezdilov, V. P.
    Mironov, M.
    Yshakov, V.
    Mironov, O. A.
    Phillips, P. J.
    Parker, E. H. C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952678.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.-j
    78.66.-w
    78.66.Db
    Opis:
    Raman spectroscopy and spectroscopic ellipsometry have been used to characterize Si/Si$\text{}_{0.78}$Ge$\text{}_{0.22}$ superlattices grown by molecular beam epitaxy on (001)Si at different substrate temperatures. The results are interpreted to give information on material and interface quality, layer thicknesses, and state of strain. The observed frequencies of zone-folded longitudinal acoustic phonons in a high quality sample agree well with those calculated using Rytov's theory of acoustic vibrations in layered media.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 1045-1049
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Energy Spectrum in Quantum Dots of Lead and Tin Chalcogenides Semiconducting Compounds
    Autorzy:
    Dugaev, V. K.
    Litvinov, V. I.
    Petrov, P. P.
    Mironov, O. A.
    Nashchekina, O. N.
    Oszwałdowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923782.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.50.+t
    71.90.+q
    Opis:
    The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calculations of the energy levels as functions of the dot radius are performed. When the anisotropy of the bare energy spectrum is strong, the energy levels are calculated using Fal'kovskii's adiabatic approximation for multiband systems. When the quantum dot material has an inverted band gap with respect to the host, the low-energy states within the fundamental gap are shown to arise.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 797-800
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    SnTe Phase Transition in Strained Superlattices PbTe/SnTe
    Autorzy:
    Mironov, O. A.
    Makarovskii, O. N.
    Nashchekina, O. N.
    Shpakovskaya, L. P.
    Litvinov, V. I.
    Oszwałdowski, M.
    Berus, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933932.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    64.70.-p
    73.40.-c
    Opis:
    An anomaly of the in-plane conductivity is observed in the superlattices PbTe/SnTe on (001)KCl in the temperature region of 60-130 K. The anomaly is caused by a structural phase transition in SnTe layer and as a result, the transition induced formation of defects. These defects are additional scattering centres which decrease the superlattice conductivity.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 853-856
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Anisotropic Microwave Absorption in High-T$\text{}_{c}$ like Semiconductor Superconducting Superlattices (001) PbTe-PbS
    Autorzy:
    Mironov, O. A.
    Makarovskii, O. N.
    Fedorenko, A. I.
    Sipatov, A. Yu.
    Nashchekina, O. N.
    Zaritskii, I. M.
    Konchits, A. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931192.pdf
    Data publikacji:
    1994-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.My
    74.50.+r
    Opis:
    The anisotropic microwave absorption in the presence of alternative magnetic field has been studied for the first time in superconducting super-lattices based on PbTe-PbS, which are layered anisotropic systems similar to high T$\text{}_{c}$ superconductors. A new method of study has been used. The microwave response was detected under broad-band conditions and compared with the results of synchronous detection. All the features which have been observed in high T$\text{}_{c}$ materials are clearly seen here.
    Źródło:
    Acta Physica Polonica A; 1994, 85, 3; 603-606
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Piezoelectric Effect in Coherently Strained B-Doped (001)SiGe/Si Heterostructures
    Autorzy:
    Knizhny, V. I.
    Mironov, O. A.
    Makarovskii, O. A.
    Braithwaite, G.
    Mattey, N. L.
    Parker, E. H. C.
    Phillips, P. J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933806.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Rb
    73.61.Cw
    73.50.Μx
    Opis:
    We report on two methods which illustrate piezoelectric effects in the strained Si (100)Si $\text{}_{1-x}$/Ge$\text{}_{x}$ system. The non-contact sound excitation technique has been used to reveal the conversion of a high-frequency electric field E into acoustic waves at 77 K which can also be modulated by a dc applied bias voltage (±30 V). The sample was an MBE grown modulation doped Si $\text{}_{0.88}$Ge$\text{}_{0.12}$/(001)Si structure with a carrier sheet density 2.0 × 10 $\text{}^{11}$ cm$\text{}^{-2}$ and a 4.2 K mobility 10500 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$. We deduce that the observed high-frequency electric field acoustic wave conversion is associated with a piezoelectric-like effect possibly due to ordering in the strained SiGe alloy or symmetry breaking effect near Si/SiGe interface. Further evidence is provided by the existence of a piezoelectric phonon interaction in the hot hole energy relaxation mechanism determined from high electric field Shubnikov de Haas He$\text{}^{3}$ low temperature measurements.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 779-782
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface
    Autorzy:
    Sadeghzadeh, M. A.
    Mironov, O. A.
    Emeleus, C. J.
    Parry, C. P.
    Phillips, P. J.
    Parker, E. H. C.
    Whall, T. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992074.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Fz
    Opis:
    We have studied the transport properties of a two-dimensional hole gas (2DHG) at the inverted interface of a strained Si$\text{}_{0.8}$Ge$\text{}_{0.2}$ quantum well. By application of a bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n$\text{}_{s}$ can be controlled, in the range of (1.5-5.2)×10$\text{}^{11}$ cm$\text{}^{-2}$. At a temperature T=0.33 K, the Hall mobility is 4650 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$ at the maximum carrier density. For lower sheet densities (n$\text{}_{s}$<2×10$\text{}^{11}$ cm$\text{}^{-2}$) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Haas oscillation measurements we have extracted the hole effective masses m*=(0.25 → 0.28)m$\text{}_{0}$ and the ratio of transport to quantum lifetimes α=(0.92 → 0.85) for the corresponding carrier density change of n$\text{}_{s}$=(5.2 → 2.5)×10$\text{}^{11}$ cm$\text{}^{-2}$. These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n$\text{}_{s}$, short range interface charge and interface roughness scattering.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 503-508
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Superconductivity of Non-Strained PbTe-PbS and Strained PbTe-SnTe Superlattices
    Autorzy:
    Mironov, O. A.
    Chistyakov, S. V.
    Fedorenko, A. I.
    Shpakovskaya, L. P.
    Sipatov, A. Yu.
    Savitskii, B. A.
    Nashchekina, O. N.
    Oszwałdowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1890800.pdf
    Data publikacji:
    1991-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.-c
    73.60.Fw
    74.60.-w
    Opis:
    A comparative study of structural and superconductive properties of semi conductor epitaxial superlattices PbTe-SnTe and PbTe-PbS grown on (001) KCl has been carried out. It has been found that the superconductivity of the PbTe-SnTe superlattices is caused by the stretching strain in the SnTe layers and it may be connected with the relative positions of L$\text{}_{8}^{+}$ and L$\text{}_{6}^{+}$ terms of PbTe and SnTe, respectively in the heterojunction. In contrast to the PbTe-SnTe superlattices, the superconductivity of the PbTe-PbS super lattices is found to be associated with regular misfit dislocation grids which are generated at the interfaces.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 3; 329-332
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content
    Autorzy:
    Durov, S.
    Mironov, O. A.
    Myronov, M.
    Whall, T. E.
    Parker, E. H. C.
    Hackbarth, T.
    Hoeck, G.
    Herzog, H. J.
    König, U.
    Känel von, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/958103.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    SiGe
    metamorphic MOSFET
    LF-noise
    I-V
    C-V
    effective hole mobility
    Opis:
    Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 1; 101-111
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions
    Autorzy:
    Komarov, A.
    Velichko, O.
    Zayats, G.
    Komarov, F.
    Miskiewicz, S.
    Mironov, A.
    Makarevich, Yu.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400426.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    66.30.J-
    07.05.Tp
    07.05.Bx
    Opis:
    Physical and mathematical models as well as numerical algorithms for simulation of advanced technological processes, such as thermal annealing after low-energy ion implantation used during the VLSI fabrication are presented. In this paper we propose a model that treats the migration of the impurity atoms at the thermal annealing. We take into account process nonlinearity and influence of non-uniform defects distribution as well as electric field and elastic stress on the migration of atoms. The redistribution of point defects as well as the diffusion of nonequilibrium impurity interstitials in silicon are described by time-dependent quasi-linear parabolic equations. The results of numerical calculations are presented as well.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 804-808
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Progress in stellarator research at IPP-Kharkov
    Autorzy:
    Moiseenko, V. E.
    Lozin, O. V.
    Shapoval, A. M.
    Dreval, M. B.
    Kulyk, Y. S.
    Mironov, Y. K.
    Romanov, V. S.
    Pashnev, V. K.
    Sorokovoy, E. L.
    Petrushenya, A. A.
    Ozherel’ev, F. I.
    Kozulya, M. M.
    Konovalov, V. G.
    Maznichenko, S. M.
    Garkusha, I. E.
    Powiązania:
    https://bibliotekanauki.pl/articles/146173.pdf
    Data publikacji:
    2016
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    stellarator
    radio-frequency heating
    low frequency modes
    magnetic diagnostics
    Opis:
    A new antenna of ‘crankshaft’ type has been installed in the Uragan-2M device in order to increase the plasma density and heating below the ion cyclotron frequency. Antenna operation is modelled by 1D code, which solves boundary problem for time-harmonic Maxwell’s equations in radially non-uniform plasma cylinder. In recent experiments with this antenna, the SXR, CV, OV and OII emission measurements indicate that the light impurity radiation barrier is overcame at this device. Plasma with a temperature of ~50 eV exists during a short period of a few milliseconds. Then the radiation collapse comes owing to strong infl ux of impurities to the plasma column. A new magnetic diagnostics has been installed at Uragan-3M. Using it the poloidal magnetic fi eld is measured and the shift of toroidal current in major radius is registered. A miniature pinhole camera array for spatially and temporally resolved measurements of soft X-ray (SXR) plasma emission has been recently installed on the U-3M. Different shapes of the SXR emission profi le has been observed in different discharge conditions.
    Źródło:
    Nukleonika; 2016, 61, 2; 91-97
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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