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    Wyświetlanie 1-17 z 17
    Tytuł:
    Tekhnologija resursosberegajushhego nakoplenija vlagi v polevykh uslovijakh
    Technology of resursozberigayuchego accumulation of moisture is in the field terms
    Autorzy:
    Zolotovskaya, E.
    Mironov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/76439.pdf
    Data publikacji:
    2013
    Wydawca:
    Komisja Motoryzacji i Energetyki Rolnictwa
    Tematy:
    moisture condensation
    soil
    precipitation
    evaporation
    temperature
    thermal insulation
    heat transfer
    soil layer
    atmospheric pressure
    Opis:
    In the article the resulted results of researches of accumulation of moisture. Got model of accumulation of moisture: there is determination of temperatures on-the-spot and depth of soil, closeness, capillary potential of soil and absolute humidity of air, thickness of teployzolyacyynogo layer. The use of the offered technology will allow to optimize, to manage forming of harvest of agricultural cultures.
    Źródło:
    Motrol. Motoryzacja i Energetyka Rolnictwa; 2013, 15, 4
    1730-8658
    Pojawia się w:
    Motrol. Motoryzacja i Energetyka Rolnictwa
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modeling of Thermal Processing at the Formation of Shallow Doped IC Active Regions
    Autorzy:
    Komarov, A.
    Velichko, O.
    Zayats, G.
    Komarov, F.
    Miskiewicz, S.
    Mironov, A.
    Makarevich, Yu.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400426.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    66.30.J-
    07.05.Tp
    07.05.Bx
    Opis:
    Physical and mathematical models as well as numerical algorithms for simulation of advanced technological processes, such as thermal annealing after low-energy ion implantation used during the VLSI fabrication are presented. In this paper we propose a model that treats the migration of the impurity atoms at the thermal annealing. We take into account process nonlinearity and influence of non-uniform defects distribution as well as electric field and elastic stress on the migration of atoms. The redistribution of point defects as well as the diffusion of nonequilibrium impurity interstitials in silicon are described by time-dependent quasi-linear parabolic equations. The results of numerical calculations are presented as well.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 804-808
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Anomalous Galvanomagnetic Effects in InSb Thin Films with Superconducting Lead Inclusions
    Autorzy:
    Mironov, O. A.
    Nashchekina, O. N.
    Oszwaldowski, M.
    Berus, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1928271.pdf
    Data publikacji:
    1993-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.My
    74.50.+r
    Opis:
    We report on the first experimental observations of an anomalous increase in the resistance of a semiconductor-super conductor contact in the vicinity of the critical temperature T$\text{}_{c}$. The effect is found in lead-doped InSb thin films having inclusions of lead of 1-3 μm in diameter: The observed effect can be a model that explains similar resistance increase observed sometimes in the high T$\text{}_{c}$ superconductors.
    Źródło:
    Acta Physica Polonica A; 1993, 83, 2; 227-230
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Study of MBE Grown Undoped Si-Si$\text{}_{1-x}$Ge$\text{}_{x}$/Si Superlattices
    Autorzy:
    Gnezdilov, V. P.
    Mironov, M.
    Yshakov, V.
    Mironov, O. A.
    Phillips, P. J.
    Parker, E. H. C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952678.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.-j
    78.66.-w
    78.66.Db
    Opis:
    Raman spectroscopy and spectroscopic ellipsometry have been used to characterize Si/Si$\text{}_{0.78}$Ge$\text{}_{0.22}$ superlattices grown by molecular beam epitaxy on (001)Si at different substrate temperatures. The results are interpreted to give information on material and interface quality, layer thicknesses, and state of strain. The observed frequencies of zone-folded longitudinal acoustic phonons in a high quality sample agree well with those calculated using Rytov's theory of acoustic vibrations in layered media.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 1045-1049
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Energy Spectrum in Quantum Dots of Lead and Tin Chalcogenides Semiconducting Compounds
    Autorzy:
    Dugaev, V. K.
    Litvinov, V. I.
    Petrov, P. P.
    Mironov, O. A.
    Nashchekina, O. N.
    Oszwałdowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1923782.pdf
    Data publikacji:
    1992-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.50.+t
    71.90.+q
    Opis:
    The energy spectrum of a quantum dot made from IV-VI narrow gap semiconductors is studied. The calculations of the energy levels as functions of the dot radius are performed. When the anisotropy of the bare energy spectrum is strong, the energy levels are calculated using Fal'kovskii's adiabatic approximation for multiband systems. When the quantum dot material has an inverted band gap with respect to the host, the low-energy states within the fundamental gap are shown to arise.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 5; 797-800
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of cultivation factors on embryogenesis in isolated microspore culture of carrot (Daucus carota L.)
    Autorzy:
    Voronina, Anastasia V.
    Vishnyakova, Anastasiia V.
    Monakhos, Sokrat G.
    Monakhos, Grigory F.
    Ushanov, Alexander A.
    Mironov, Aleksey A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2174344.pdf
    Data publikacji:
    2022
    Wydawca:
    Instytut Technologiczno-Przyrodniczy
    Tematy:
    carrot
    Daucus carota L.
    doubled haploids
    embryogenesis
    isolated microspore culture
    male sterility
    Opis:
    Using doubled haploid technologies inbreeding can significantly reduce the time to obtain homozygous parental lines required for the production of F1-hybrid of vegetable crops. This study aims to investigate the influence of factors on the efficiency of carrot embryogenesis in isolated microspore culture to optimise the elements of protocol for producing doubled haploids. Microspores were isolated from inflorescences of 21 genotypes and incubated in NLN13 medium supplemented with 0.1 mg·dm-3 2,4-dichlorophenoxyacetic acids, 0.1 mg·dm-3 1-naphthyl acetic acids, 130 g·dm-3 sucrose, and 400 mg·dm-3 casein hydrolysate and its modifications. Embryoids and their groups were formed after 2–6 months, in some cases after 12 months of cultivation. Depending on the variant, the embryogenesis efficiency averaged from 0 to 4.9 embryoids or groups of embryoids per Petri dish (10 cm3). Embryoids within the group were formed from different microspores. No significant effects of inflorescence position on the plant (branching order), sucrose, and casein hydrolysate concentration in the medium were observed. Significant advantages (p ≥ 0.05) for some genotypes were shown: 1) microspore suspension density 4·104 cells·cm-3 (5.0 embryoids per Petri dish were formed at a microspore suspension density of 4·104 cells·cm-3, 0.0 embryoids per Petri dish at a density of 8·104 cells·cm-3); 2) cultivating microspores of tetrad and early mononuclear stage (4.9 ±3.1 embryoids per Petri dish were obtained by culturing tetrads and early mononuclear microspores, while 0.6 ±0.7 embryoids per Petri dish were obtained by culturing of later developmental stages); 3) high-temperature treatment duration of five days (4.9 ±2.1 embryoids per Petri dish were obtained after five days of high-temperature treatment, 2.7 ±2.6 embryoids per Petri dish formed after two days of high-temperature treatment; 9.8 ±4.7, 10.1 ±6.1, 0.0 ±0.0 embryoids per Petri dish formed after two, five and eight days of high-temperature treatment respectively); 4) adding colchicine 0.5 mg·dm-3 to the nutrient medium for two days of high-temperature treatment, followed by medium replacement (3.3 ±2.6 embryoids per Petri dish were obtained by using a nutrient medium with colchicine, while 1.7 ±1.5 embryoids per Petri dish were obtained by culturing in the reference variant).
    Źródło:
    Journal of Water and Land Development; 2022, 55; 125--128
    1429-7426
    2083-4535
    Pojawia się w:
    Journal of Water and Land Development
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    SnTe Phase Transition in Strained Superlattices PbTe/SnTe
    Autorzy:
    Mironov, O. A.
    Makarovskii, O. N.
    Nashchekina, O. N.
    Shpakovskaya, L. P.
    Litvinov, V. I.
    Oszwałdowski, M.
    Berus, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933932.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    64.70.-p
    73.40.-c
    Opis:
    An anomaly of the in-plane conductivity is observed in the superlattices PbTe/SnTe on (001)KCl in the temperature region of 60-130 K. The anomaly is caused by a structural phase transition in SnTe layer and as a result, the transition induced formation of defects. These defects are additional scattering centres which decrease the superlattice conductivity.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 853-856
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Anisotropic Microwave Absorption in High-T$\text{}_{c}$ like Semiconductor Superconducting Superlattices (001) PbTe-PbS
    Autorzy:
    Mironov, O. A.
    Makarovskii, O. N.
    Fedorenko, A. I.
    Sipatov, A. Yu.
    Nashchekina, O. N.
    Zaritskii, I. M.
    Konchits, A. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931192.pdf
    Data publikacji:
    1994-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.My
    74.50.+r
    Opis:
    The anisotropic microwave absorption in the presence of alternative magnetic field has been studied for the first time in superconducting super-lattices based on PbTe-PbS, which are layered anisotropic systems similar to high T$\text{}_{c}$ superconductors. A new method of study has been used. The microwave response was detected under broad-band conditions and compared with the results of synchronous detection. All the features which have been observed in high T$\text{}_{c}$ materials are clearly seen here.
    Źródło:
    Acta Physica Polonica A; 1994, 85, 3; 603-606
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Piezoelectric Effect in Coherently Strained B-Doped (001)SiGe/Si Heterostructures
    Autorzy:
    Knizhny, V. I.
    Mironov, O. A.
    Makarovskii, O. A.
    Braithwaite, G.
    Mattey, N. L.
    Parker, E. H. C.
    Phillips, P. J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933806.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Rb
    73.61.Cw
    73.50.Μx
    Opis:
    We report on two methods which illustrate piezoelectric effects in the strained Si (100)Si $\text{}_{1-x}$/Ge$\text{}_{x}$ system. The non-contact sound excitation technique has been used to reveal the conversion of a high-frequency electric field E into acoustic waves at 77 K which can also be modulated by a dc applied bias voltage (±30 V). The sample was an MBE grown modulation doped Si $\text{}_{0.88}$Ge$\text{}_{0.12}$/(001)Si structure with a carrier sheet density 2.0 × 10 $\text{}^{11}$ cm$\text{}^{-2}$ and a 4.2 K mobility 10500 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$. We deduce that the observed high-frequency electric field acoustic wave conversion is associated with a piezoelectric-like effect possibly due to ordering in the strained SiGe alloy or symmetry breaking effect near Si/SiGe interface. Further evidence is provided by the existence of a piezoelectric phonon interaction in the hot hole energy relaxation mechanism determined from high electric field Shubnikov de Haas He$\text{}^{3}$ low temperature measurements.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 779-782
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface
    Autorzy:
    Sadeghzadeh, M. A.
    Mironov, O. A.
    Emeleus, C. J.
    Parry, C. P.
    Phillips, P. J.
    Parker, E. H. C.
    Whall, T. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992074.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Fz
    Opis:
    We have studied the transport properties of a two-dimensional hole gas (2DHG) at the inverted interface of a strained Si$\text{}_{0.8}$Ge$\text{}_{0.2}$ quantum well. By application of a bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n$\text{}_{s}$ can be controlled, in the range of (1.5-5.2)×10$\text{}^{11}$ cm$\text{}^{-2}$. At a temperature T=0.33 K, the Hall mobility is 4650 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$ at the maximum carrier density. For lower sheet densities (n$\text{}_{s}$<2×10$\text{}^{11}$ cm$\text{}^{-2}$) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Haas oscillation measurements we have extracted the hole effective masses m*=(0.25 → 0.28)m$\text{}_{0}$ and the ratio of transport to quantum lifetimes α=(0.92 → 0.85) for the corresponding carrier density change of n$\text{}_{s}$=(5.2 → 2.5)×10$\text{}^{11}$ cm$\text{}^{-2}$. These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n$\text{}_{s}$, short range interface charge and interface roughness scattering.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 503-508
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Superconductivity of Non-Strained PbTe-PbS and Strained PbTe-SnTe Superlattices
    Autorzy:
    Mironov, O. A.
    Chistyakov, S. V.
    Fedorenko, A. I.
    Shpakovskaya, L. P.
    Sipatov, A. Yu.
    Savitskii, B. A.
    Nashchekina, O. N.
    Oszwałdowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1890800.pdf
    Data publikacji:
    1991-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.-c
    73.60.Fw
    74.60.-w
    Opis:
    A comparative study of structural and superconductive properties of semi conductor epitaxial superlattices PbTe-SnTe and PbTe-PbS grown on (001) KCl has been carried out. It has been found that the superconductivity of the PbTe-SnTe superlattices is caused by the stretching strain in the SnTe layers and it may be connected with the relative positions of L$\text{}_{8}^{+}$ and L$\text{}_{6}^{+}$ terms of PbTe and SnTe, respectively in the heterojunction. In contrast to the PbTe-SnTe superlattices, the superconductivity of the PbTe-PbS super lattices is found to be associated with regular misfit dislocation grids which are generated at the interfaces.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 3; 329-332
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content
    Autorzy:
    Durov, S.
    Mironov, O. A.
    Myronov, M.
    Whall, T. E.
    Parker, E. H. C.
    Hackbarth, T.
    Hoeck, G.
    Herzog, H. J.
    König, U.
    Känel von, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/958103.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    SiGe
    metamorphic MOSFET
    LF-noise
    I-V
    C-V
    effective hole mobility
    Opis:
    Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 1; 101-111
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural – functional model of maintenance and repair of the traction substations equipment
    Strukturalno-funkcjonalny model utrzymania i napraw wyposażenia podtsacji trakcyjnych
    Autorzy:
    Sychenko, V.
    Mironov, D.
    Białoń, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/253653.pdf
    Data publikacji:
    2017
    Wydawca:
    Instytut Naukowo-Wydawniczy TTS
    Tematy:
    traction substations
    rail transport
    efficiency
    podstacja trakcyjna
    transport kolejowy
    efektywność
    Opis:
    To solve the problem of improving the quality control of substation equipment maintenance and repair process the structural and functional analysis for the distances of power supply has been performed. As a linguistic support for this task the International Standards Package Modeling IDEF (Icam Definition) has been used. It allows to analyze the process from three key perspectives at the same time – IDEFO (Integrated Definition for Function Modeling), IDEF3 and DFD (Data Flow Diagram). IDEF modeling is a way to reduce the amount of costly errors by structuring the process in the early stages of creating intelligent systems. It improves the communication between users and developers and smooth the transition from analysis to design. A complex task of equipment maintenance and repair process has been divided into a series of simple tasks on the basis of IDEF modeling. Structural - functional modeling with the selection of events has been done according to the IDEF0 methodology. Description of processes has been done according to the methodology IDEFЗ. DFD method has been used for building the data flow diagrams. Conducted structural-functional analysis has been shown that at some stages this process often requires the operational definition of different types of resources needed to perform repair work.
    Źródło:
    TTS Technika Transportu Szynowego; 2017, 11; 49-52
    1232-3829
    2543-5728
    Pojawia się w:
    TTS Technika Transportu Szynowego
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Technology of Thin Film Fabrication on Porous Metal Oxide Substrates
    Autorzy:
    Shtern, Yu.
    Shtern, M.
    Mironov, R.
    Sherchenkov, A.
    Rogachev, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398772.pdf
    Data publikacji:
    2016-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Np
    Opis:
    One of the main issues of the device technology on metal-dielectric (MD) substrates is poor adhesion of thin metallic films, which are used for interconnections in electrical circuits. Films are formed by vacuum deposition on a porous dielectric layer of substrates. The presence of pores sufficiently complicates the cleaning of the substrate surface, which significantly decreases the adhesion of the film deposited on it. Technology of metal films with high adhesion, fabricated by ion-plasma method is proposed in this work. Films were deposited on MD substrates produced by electrochemical oxidation of aluminum alloys. The main operations of the technology are the following. Removal of residual electrolyte after the oxidation is carried out by rinsing of substrates initially under running hot water, and then in deionized water, followed by drying in a flow of heated nitrogen. Annealing of substrates under the pressure of $10^{-3}$ Pa and temperature of 550-570 K for 20 min is carried on in the vacuum chamber before the deposition of metal films. Copper is used as the main material of the interconnection films. Adhesion sublayer is fabricated on the basis of chromium or vanadium, which have high enthalpy of the oxide formation. Measurements showed that the copper films with the thickness of 1.5 μm, deposited on the vanadium sublayer with the thickness of 0.12 μm, which is comparable with the roughness of oxide layer, have adhesion of $25 N//mm^{2}$ at the temperature of 520 K. Investigation of adhesion was carried on by the method of direct tear off with the error of up to 10%.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 4; 776-778
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Technology and Investigation of Ohmic Contacts to Thermoelectric Materials
    Autorzy:
    Shtern, Y.
    Mironov, R.
    Shtern, M.
    Sherchenkov, A.
    Rogachev, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398783.pdf
    Data publikacji:
    2016-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.Np
    Opis:
    Technology is developed, materials and regimes of the fabrication of ohmic contacts to the effective thermoelectric materials $Bi_{2}Te_{2.8}Se_{0.2}$ (n-type) and $Bi_{0.5}Sb_{1.5}Te_{3}$ (p-type) are determined. Ohmic contacts were obtained by the vacuum deposition of nickel. Factors determining adhesion strength and resistivity of fabricated contacts are determined. Process of surface preparation of the thermoelectric materials before the ohmic contact deposition is optimized during the technology development. The use of electrochemical polishing, ultrasound treatment, finish cleaning in toluene and isopropyl alcohol vapor, and annealing in vacuum allowed achieving stable results in the formation of contacts. It was shown that contacts fabricated using of electron-beam evaporation of nickel possess maximum adhesion strength of 18-19 N/mm². It was found that high adhesion is caused by the existence of transition layer in the metal-thermoelectric material contact range, formed due to the interaction of metal with the components of thermoelectric material. Proposed technology allows obtaining ohmic contacts with the resistance of the unit area not exceeding $10^{-10}$ Ohm m².
    Źródło:
    Acta Physica Polonica A; 2016, 129, 4; 785-787
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Role of a biased electrode in the production of highly charged ions using the DECRIS 14-3 ion source
    Autorzy:
    Leporis, M.
    Bogomolov, S.
    Efremov, A.
    Loginov, V.
    Mironov, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/148672.pdf
    Data publikacji:
    2003
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    ECR ion source
    plasma
    biased electrode
    Opis:
    ECR ion sources are used for the production of highly charged ions in various accelerator facilities. In most of them biased electrodes are normally used to increase the ion yield. Physical processes in the plasma of an ion source are quite complicated and the role of a biased electrode is not clear. To investigate the effect of a biased electrode on the intensity of extracted highly charged ions, an axially movable electrode was placed into the plasma chamber of the DECRIS 14-3 ion source. It was found that the intensity of Ar ions depends on the position of the biased electrode and negative bias voltage. The optimal position of the biased electrode was found near the maximum of the magnetic field. Experiments with a pulsed biased electrode were also carried out. The influence of the negative pulse on the ion yield depends on the ion charge state.
    Źródło:
    Nukleonika; 2003, 48,suppl.2; 89-92
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Progress in stellarator research at IPP-Kharkov
    Autorzy:
    Moiseenko, V. E.
    Lozin, O. V.
    Shapoval, A. M.
    Dreval, M. B.
    Kulyk, Y. S.
    Mironov, Y. K.
    Romanov, V. S.
    Pashnev, V. K.
    Sorokovoy, E. L.
    Petrushenya, A. A.
    Ozherel’ev, F. I.
    Kozulya, M. M.
    Konovalov, V. G.
    Maznichenko, S. M.
    Garkusha, I. E.
    Powiązania:
    https://bibliotekanauki.pl/articles/146173.pdf
    Data publikacji:
    2016
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    stellarator
    radio-frequency heating
    low frequency modes
    magnetic diagnostics
    Opis:
    A new antenna of ‘crankshaft’ type has been installed in the Uragan-2M device in order to increase the plasma density and heating below the ion cyclotron frequency. Antenna operation is modelled by 1D code, which solves boundary problem for time-harmonic Maxwell’s equations in radially non-uniform plasma cylinder. In recent experiments with this antenna, the SXR, CV, OV and OII emission measurements indicate that the light impurity radiation barrier is overcame at this device. Plasma with a temperature of ~50 eV exists during a short period of a few milliseconds. Then the radiation collapse comes owing to strong infl ux of impurities to the plasma column. A new magnetic diagnostics has been installed at Uragan-3M. Using it the poloidal magnetic fi eld is measured and the shift of toroidal current in major radius is registered. A miniature pinhole camera array for spatially and temporally resolved measurements of soft X-ray (SXR) plasma emission has been recently installed on the U-3M. Different shapes of the SXR emission profi le has been observed in different discharge conditions.
    Źródło:
    Nukleonika; 2016, 61, 2; 91-97
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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