- Tytuł:
- Changes in Amorphous Hydrogenated Carbon Films by Ultraviolet and Infrared Laser Irradiation
- Autorzy:
-
Vinciūnaitė, V.
Grigonis, A.
Medvid, A.
Zabels, R. - Powiązania:
- https://bibliotekanauki.pl/articles/1400457.pdf
- Data publikacji:
- 2013-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
79.20.Eb
81.05.uj
81.15.Jj
82.80.Gk - Opis:
- Amorphous hydrogenated carbon films were formed on the Si (100) wafers by a direct-ion beam deposition method from pure acetylene and acetylene-hydrogen gas mixtures. The films were irradiated with a nanosecond Nd:YAG laser working at the first harmonics ($λ_1$=1064 nm), the fourth harmonics ($λ_4$=266 nm) or with a $Nd:YVO_4$ laser working at the third harmonic ($λ_3$=355 nm). The films were studied by the Raman scattering, micro-Fourier transform infrared and Fourier transform infrared spectroscopies, null-ellipsometry, optical and scanning electron microscope, and Vickers hardness method. Irradiation by the wavelength $λ_1$=1064 nm leads to graphitization and formation of the silicon carbide, because of the silicon substrate decomposition. The samples were strongly modified after the irradiation by $λ_3$=355 nm - the thickness of the films decreased, and silicon carbide was formed. It was observed that nano-structured materials (e.g. carbon nano-onions, nc-diamond) were formed after the irradiation by $λ_4$=266 nm.
- Źródło:
-
Acta Physica Polonica A; 2013, 123, 5; 874-876
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł