Autor: Matvijishyn, R. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Crystal structures of ErGe2 and TmGe2 compounds
Autorzy:: Matvijishyn, R.
Pavlyuk, V.
Shpyrka, Z.
Serkiz, R.
Powiązania:: https://bibliotekanauki.pl/articles/410283.pdf
Data publikacji:: 2010
Wydawca:: Uniwersytet Humanistyczno-Przyrodniczy im. Jana Długosza w Częstochowie. Wydawnictwo Uczelniane
Tematy:: rare earths phases
crystal structure
X-ray diffraction
Opis:: Crystal structures of ErGe2 and TmGe2 compounds were determined by X-ray single crystal diffraction. Both TmGe2 and ErGe2 crystallized with the ZrSi2 structure type (space group Cmcm).
Źródło:: Chemistry, Environment, Biotechnology; 2010, 14; 35-40
2083-7097
Pojawia się w:: Chemistry, Environment, Biotechnology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Radiation-stimulated changes in the characteristics of surface-barrier AL–SI–BI structures with different concentrations of dislocations at the crystal surface
Autorzy:: Pavlyk, B.
Kushlyk, M.
Slobodzyan, D.
Matvijishyn, I.
Lys, R.
Jałbrzykowski, M.
Powiązania:: https://bibliotekanauki.pl/articles/386556.pdf
Data publikacji:: 2018
Wydawca:: Politechnika Białostocka. Oficyna Wydawnicza Politechniki Białostockiej
Tematy:: silicon
dislocations
surface-barrier structures
surface layers
radiation
reconstruction of defects
Opis:: We report the results of studies for the radiation-stimulated changes in electro-physical characteristics of surface-barrier Al–Si–Bi structures based on p-Si. We demonstrate that the X-ray irradiation is accompanied by different processes which depend on the density of the dislocations in the original silicon crystals. A usual evolution of the existing structural defects and their radiationstimulated ordering dominate when the concentration remains low enough. Increase in the concentration causes the increasing role of generation of additional radiation defects. Modelling of the underlying physical processes has testified that the near-contact Si layers are strained. They act as getters for the structural defects and impurities.
Źródło:: Acta Mechanica et Automatica; 2018, 12, 1; 72-77
1898-4088
2300-5319
Pojawia się w:: Acta Mechanica et Automatica
Dostawca treści:: Biblioteka Nauki

Artykuł

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