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Wyszukujesz frazę "Marczewski, J." wg kryterium: Autor

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    Wyświetlanie 1-14 z 14
    Tytuł:
    Silencing expression of the CBP80 gene for engineering drought-tolerant Solanum tuberosum plants
    Autorzy:
    Wyrzykowska, A.
    Pieczynski, M.
    Marczewski, W.
    Hennig, J.
    Dolata, J.
    Bielewicz, D.
    Piontek, P.
    Krusiewicz, D.
    Strzelczyk-Zyta, D.
    Konopka-Postupolska, D.
    Krzeslowska, M.
    Jarmolowski, A.
    Szweykowska-Kulinska, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/79805.pdf
    Data publikacji:
    2013
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    conference
    climate change
    CBP80 gene
    Solanum tuberosum
    plant
    drought tolerance
    transgenic plant
    water shortage
    Źródło:
    BioTechnologia. Journal of Biotechnology Computational Biology and Bionanotechnology; 2013, 94, 3
    0860-7796
    Pojawia się w:
    BioTechnologia. Journal of Biotechnology Computational Biology and Bionanotechnology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect
    Autorzy:
    Videlier, H.
    Dyakonova, N.
    Teppe, F.
    Consejo, C.
    Chenaud, B.
    Knap, W.
    Lusakowski, J.
    Tomaszewski, D.
    Marczewski, J.
    Grabiec, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492958.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.Tv
    Opis:
    We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 927-929
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of surface soil moisture from SMOS satellite and ground measurements
    Autorzy:
    Usowicz, B.
    Marczewski, W.
    Usowicz, J.B.
    Lukowski, M.I.
    Lipiec, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/25959.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Instytut Agrofizyki PAN
    Tematy:
    comparison
    soil surface
    soil moisture
    SMOS satellite
    ground
    measurement
    correlation coefficient
    Opis:
    Soil moisture datasets at various scales are needed for sustainable land use and water management. The aim of this study was to compare soil moisture ocean salinity satellite and in situ soil moisture data for the Podlasie and Polesie regions in Eastern Poland. Both regions have similar climatic and topo- graphic conditions but are different in land use, vegetation, and soil cover. The test sites were located on agricultural fields on sandy soils and natural vegetation on marshy soils that prevail in the Podlasie and Polesie regions, respectively. The soil moisture ocean salinity soil moisture data were obtained from radiometric measurements (1.4 GHz) and the ground soil moisture from sensors at a depth of 5 cm during the years 2010-2011. In general, temporal patterns of soil moisture from both satellite and ground measurements followed the rainfall trend. The regression coeffi- cients, Bland-Altman analysis, concordance correlation coefficient, and total deviation index showed that the agreement between ground and soil moisture ocean salinity derived soil moisture data is better for the Podlasie than the Polesie region. The lower agre- ement in Polesie was attributed mostly to the presence of the widespread natural vegetation on the wetter marsh soil along with minor contribution of agriculturally used drier coarse-textured soils.
    Źródło:
    International Agrophysics; 2014, 28, 3
    0236-8722
    Pojawia się w:
    International Agrophysics
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Wilgotność gleb na obszarze Polski z pomiarów satelitarnych
    Soil moisture from satellite measurements on territory of Poland
    Autorzy:
    Usowicz, B.
    Marczewski, W.
    Slawinski, C.
    Lukowski, M.
    Usowicz, J.B.
    Powiązania:
    https://bibliotekanauki.pl/articles/86134.pdf
    Data publikacji:
    2012
    Wydawca:
    Polska Asocjacja Ekologii Krajobrazu
    Źródło:
    Problemy Ekologii Krajobrazu; 2012, 33
    1899-3850
    Pojawia się w:
    Problemy Ekologii Krajobrazu
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A versatile tool for extraction of MOSFETs parameters
    Autorzy:
    Tomaszewski, D.
    Kociubiński, A.
    Marczewski, J.
    Kucharski, K.
    Domański, K.
    Grabiec, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/308856.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    MOSFETs parameters
    SPICE
    least squares method
    Opis:
    Extraction of MOSFET parameters is a very important task for the purposes of MOS integrated circuits characterization and design. A versatile tool for the MOSFET parameter extraction has been developed in the Institute of Electron Technology (IET). It is used to monitor the technologies applied for fabrication of several groups of devices, e.g., CMOS ASICs, SOI pixel detectors. At present two SPICE MOSFET models (LEVEL = 1, 2) have been implemented in the extraction tool. The LEVEL = 3 model is currently being implemented. The tool combines different methods of parameter extraction based on local as well as global fitting of models to experimental data.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 1; 129-134
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    CMOS Readout Circuit Integrated with Ionizing Radiation Detectors
    Autorzy:
    Szymański, A.
    Obrębski, D.
    Marczewski, J.
    Tomaszewski, D.
    Grodner, M.
    Pieczyński, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/226502.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    readout electronics
    ASIC
    SOI
    ionizing radiation detectors
    Opis:
    This paper describes the work performed in ITE on integration in one CMOS chip the ionizing radiation detectors with dedicated readout electronics. At the beginning, some realizations of silicon detectors of ionizing radiation are presented together with most important issues related to these devices. Next, two developed test structures for readout electronics are discussed in detail together with main features of non-typical silicon proces deployed.
    Źródło:
    International Journal of Electronics and Telecommunications; 2014, 60, 1; 117-124
    2300-1933
    Pojawia się w:
    International Journal of Electronics and Telecommunications
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fuel fractions obtained in the recycling of plastics
    Autorzy:
    Sokołowski, J.
    Rokicki, G.
    Marczewski, M.
    Krajewska, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/777943.pdf
    Data publikacji:
    2007
    Wydawca:
    Zachodniopomorski Uniwersytet Technologiczny w Szczecinie. Wydawnictwo Uczelniane ZUT w Szczecinie
    Tematy:
    recykling tworzyw sztucznych
    kraking katalityczny
    plastic recycling
    catalytic cracking
    Opis:
    The decomposition of mixtures of polystyrene, polyethylene, and motor oil was studied at 470 - 510°C in a flow-through setup supplied with a fluidized bed reactor and a cascade of receivers. The aim of the work was to determine the role of the fluidized bed in the reactor, in the process of degradation of plastics in the cases where it was only a carrier of heat for the endothermal process of pyrolysis or it was both a carrier of heat and a catalytic bed for the process. The effect of the catalyst granulation and of the method of the organization of work in the reactor on the yield of the process and on the composition of the products obtained, was also studied. In the cases where Al2O3 of granulation 0.2 mm was used as a fluidized bed catalyst the liquid products of the decomposition of the polymers contained mainly alkyl-aromatic derivatives of styrene, benzene and alkane hydrocarbons. If nano-Al2O3 was used as a catalyst and it was introduced into the reactor with a stream of raw materials, the obtained products were solids, composed mostly of styrene and alkene hydrocarbons.
    Źródło:
    Polish Journal of Chemical Technology; 2007, 9, 3; 46-50
    1509-8117
    1899-4741
    Pojawia się w:
    Polish Journal of Chemical Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Physicians’ religiosity and attitudes towards patients
    Autorzy:
    Pawlikowski, J.
    Sak, J.J.
    Marczewski, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/51723.pdf
    Data publikacji:
    2012
    Wydawca:
    Instytut Medycyny Wsi
    Opis:
    Background: Many religions underline the value of merciful acts, especially the care of the sick. The aim of the survey was to verify the hypothesis that a higher religiosity correlates with a more desirable ethical attitude towards patients. Method: An anonymous questionnaire consisting of standardized tools: Scale of Attitudes towards the Patient (SAtP) (four dimensions: respect for autonomy, altruism, empathy and holistic approach to a patient), the Scale of Religious Attitudes (SReAt) evaluating the religiosity, and some questions related to the role of religious beliefs in respondents’ professional lives. The research was carried out on a group of 528 Polish physicians, 324 of whom returned the questionnaire (return = 61%); 51% women, 49% men; average work experience: 17.03 years; 93% Catholics. Results: Religiosity correlates positively with altruism (r=0.12; p<0.05), holistic approach (r=0.18; p<0.01) and empathy (r=0.20; p<0.01), but not with respect for autonomy. For the majority of physicians, religious faith is an important supportive factor, especially in making difficult decisions. Surgeons are less religious (M=5.32; SD=1.06) than non-surgeons (M=5.61; SD=0.93); (t= -2.59, p<0.05). Conclusion: Physicians’ religiosity is an essential factor shaping their attitude towards patients. The majority of physicians declared that their religious faith influences their professional decisions, especially in difficult situations. The religiosity variable explains physicians’ moral attitude better than the denomination (religious affiliation) variable. Physician-patient relation frameworks should take into account not only patients’ but also physicians’ cultural and religious beliefs.
    Źródło:
    Annals of Agricultural and Environmental Medicine; 2012, 19, 3
    1232-1966
    Pojawia się w:
    Annals of Agricultural and Environmental Medicine
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    No effect of3-(N-p-isopropoxyphenylsuccinimidomethylamino)-cinnamic acid on anticonvulsant action of different classical antiepileptic drugs in mouse maximal electroshock-induced seizure model
    Autorzy:
    Luszczycki, J. J.
    Marczewski, T.
    Marzeda, E.
    Durmowicz, D.
    Podgorska, D.
    Kocharov, S. L.
    Florek-Luszczki, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/972739.pdf
    Data publikacji:
    2012
    Wydawca:
    Instytut Medycyny Wsi
    Tematy:
    antiepileptic drugs
    maximal electroshock-induced seizures
    pharmacokinetic/pharmacodynamic interaction
    p-isopropoxyphenylsuccinimide derivative
    Opis:
    Introduction and objective: The aim of the study was to determine the effects of 3-(N-p-isopropoxyphenylsuccinimidomethylamino)-cinnamic acid (IPPSMA-CA – a new succinimide derivative) on the protective action of 4 classical antiepileptic drugs (AEDs): carbamazepine [CBZ], phenobarbital [PB], phenytoin [PHT] and valproate [VPA]), against maximal electroshock (MES)-induced tonic seizures in mice. Materials and methods: Tonic hind limb extension (seizure activity) was evoked in adult male albino Swiss mice by a current (sine-wave, 25 mA, 500 V, 50 Hz, 0.2 s stimulus duration) delivered via auricular electrodes. Acute adverse-effectprofiles of the combination of IPPSMA-CA and 4 classical AEDs (CBZ, PB, PHT and VPA) with respect to motor performance, long-term memory and skeletal muscular strength were measured in the chimney, passive avoidance and grip-strength tests, respectively. Results: IPPSMA-CA administered at 150 mg/kg (i.p.) significantly elevated the threshold for electroconvulsions in mice (p<0.01). IPPSMA-CA at doses of 50 and 100 mg/kg, however, had no significant impact on the threshold for electroconvulsions in mice. Nor did IPPSMA-CA (100 mg/kg) significantly affect the anticonvulsant activity of CBZ, PB, PHT and VPA in the MES test in mice. None of the examined combinations of IPPSMA-CA (100 mg/kg, i.p.) with CBZ, PB, PHT and VPA (at their ED50 values from the MES-induced seizure test) affected motor coordination in the chimney test, long-term memory in the passive avoidance task, and muscular strength in the grip-strength test in mice. This indicates no possible acute adverse effects in animals. Conclusions: IPPSMA-CA elevated the threshold for electroconvulsions in mice in a dose-dependent manner. However, IPPSMA-CA at a sub-protective dose of 100 mg/kg did not affect the anticonvulsant action of various classical AEDs in the mouse MES model. Thus, the combinations of IPPSMA-CA with CBZ, PB, PHT and VPA are neutral from a preclinical viewpoint.
    Źródło:
    Journal of Pre-Clinical and Clinical Research; 2012, 06, 1; 20-24
    1898-2395
    Pojawia się w:
    Journal of Pre-Clinical and Clinical Research
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    An Influence of Silicon Substrate Parameters on a Responsivity of MOSFET-Based Terahertz Detectors
    Autorzy:
    Kucharski, K.
    Zagrajek, P.
    Tomaszewski, D.
    Panas, A.
    Głuszko, G.
    Marczewski, J.
    Kopyt, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1186027.pdf
    Data publikacji:
    2016-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.30.Tv
    85.60.Gz
    42.79.Pw
    Opis:
    Silicon n-channel MOS transistors are a promising solution for sub-terahertz radiation detection. Their sensitivity is strongly related to the device construction. A type and thickness of the device substrate are key parameters affecting the responsivity, because the silicon substrate is a medium for the radiation propagation and the radiation energy loss, which degrades the detection efficiency. This work is aimed at analysis of the silicon substrate characteristics effect on operation of the MOSFETs as the terahertz radiation sensors. A manufacturing of the MOSFETs on three different substrate types including changing the substrate thickness is described in the paper. Next, the fabricated devices were exposed to THz radiation and their photoresponses were measured. It may be concluded that MOSFETs on silicon-on-insulator wafers with locally thinned substrates demonstrate the highest photoresponse. However, the experiments with the MOSFETs on high resisivity wafers give also promising results.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 5; 1193-1195
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Development of the NMOS-based THz detectors and the readout systems for THz spectroscopy and imaging
    Autorzy:
    Kołaciński, C.
    Obrębski, D.
    Marczewski, J.
    Zbieć, M.
    Kucharski, K.
    Zagrajek, P.
    Kopyt, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/397805.pdf
    Data publikacji:
    2017
    Wydawca:
    Politechnika Łódzka. Wydział Mikroelektroniki i Informatyki
    Tematy:
    NMOS-based terahertz detector
    readout system
    detektor terahercowy
    obwód odczytujący
    Opis:
    This paper summarizes the work performed within the Polish applied research project THzOnLine aiming at multipixel THz detectors based on selective NMOS transistors and its application in biology, medicine and security systems, completed in 2016. It starts with presentation of techniques applied for increasing the efficiency of THz detectors, i.e. used to maximize the output voltage yielded from NMOS-based detecting devices when exposed to a THz radiation. In the second part of this work the authors focuse on issues related to development of the readout electronics for these devices, as well as present the collection of integrated circuits and two complete measurement systems constructed by them.
    Źródło:
    International Journal of Microelectronics and Computer Science; 2017, 8, 3; 101-109
    2080-8755
    2353-9607
    Pojawia się w:
    International Journal of Microelectronics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Identification of Residual Impurities in Si-Doped MBE Grown GaAs
    Autorzy:
    Kaniewska, M.
    Regiński, K.
    Kaniewski, J.
    Muszalski, J.
    Ornoch, L.
    Adamczewska, J.
    Marczewski, J.
    Bugajski, M.
    Mizera, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933820.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    73.40.Νs
    73.20.Hb
    Opis:
    The changes of dopant vaporization enthalpy in GaAs:Si grown by molecular beam epitaxy revealed the presence of residual donors related to group VI elements. This has been confirmed by deep level transient spectroscopy studies of AlGaAs:Si layers grown in the same MBE system. It is argued that a commonly observed deep trap labelled E2 is probably related to Te, Se or S. The measurements have been performed on near-ideal Al Schottky barriers grown in situ by MBE.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 775-778
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Anomalous Behavior of the Hall Effect in III-V Heterostructures
    Autorzy:
    Dziuba, Z.
    Górska, M.
    Marczewski, J.
    Przesławski, T.
    Regiński, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/2012953.pdf
    Data publikacji:
    2000-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Lk
    72.80.Ey
    Opis:
    The Hall effect and magnetoresistance were measured in the InAs/GaAs heterostructure at temperatures from 300 K down to 3 K, in a magnetic field range from 0.01 to 1.5 T. The anomalous magnetic field dependence of the Hall coefficient in the InAs/GaAs heterostructure in magnetic fields below 0.1 T was explained as due to an extraordinary Hall effect caused by skew scattering on dislocations.
    Źródło:
    Acta Physica Polonica A; 2000, 97, 2; 331-336
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    TSSOI as an efficient tool for diagnostics of SOI technology in Institute of Electron Technology
    Autorzy:
    Barański, M.
    Domański, K.
    Grabiec, P.
    Grodner, M.
    Jaroszewicz, B.
    Kociubiński, A.
    Kucewicz, W.
    Kucharski, K.
    Marczewski, J.
    Niemiec, H.
    Sapor, M.
    Tomaszewski, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/308825.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    SOI CMOS technology
    pixel detector
    test structure
    Opis:
    This paper reports a test structure for characterization of a new technology combining a standard CMOS process with pixel detector manufacturing technique. These processes are combined on a single thick-_lm SOI wafer. Preliminary results of the measurements performed on both MOS SOI transistors and dedicated SOI test structures are described in detail.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 1; 85-93
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-14 z 14

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