- Tytuł:
- Epitaxially Induced Defects in Sr- and O-doped La$\text{}_{2}$CuO$\text{}_{4}$ Thin Films Grown by MBE: Implications for Transport Properties
- Autorzy:
-
Locquet, J.-P
Williams, E. J. - Powiązania:
- https://bibliotekanauki.pl/articles/1964235.pdf
- Data publikacji:
- 1997-07
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.72.Nn
74.62.Fj
81.15.Hi
74.72.Dn - Opis:
- In this paper, the critical role played by various types of defects and strain relaxation mechanisms in high-T$\text{}_{c}$ thin films is highlighted and illustrated with examples. The defects are essential for providing adequate diffusion channels for oxygen ingress during the cooling step in c-axis thin films. The operation of strain relaxation mechanisms necessitated by the lattice mismatch between film and substrate can impose a compressive or tensile biaxial pressure, which either increases or reduces the critical temperature.
- Źródło:
-
Acta Physica Polonica A; 1997, 92, 1; 69-84
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł