- Tytuł:
- Initial Roughness and Relaxation behaviour of MBE Grown ZnSe/GaAs
- Autorzy:
-
Buda, B.
Leifeld, O.
Völlmeke, S.
Schmilgus, F.
As, D. J.
Schikora, D.
Lischka, K. - Powiązania:
- https://bibliotekanauki.pl/articles/1952466.pdf
- Data publikacji:
- 1996-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 68.55.-a
- Opis:
- We investigated the GaAs/ZnSe interface and the influence of the Ga$\text{}_{2}$Se$\text{}_{3}$ formation at the GaAs/ZnSe interface on the relaxation of the ZnSe epilayer using reflection high-energy electron diffraction, atomic force microscope, photoluminescence, and X-ray diffraction techniques. An improvement of the surface roughness due to the cleaning of the GaAs substrate with hydrogen excited in a plasma source and a higher critical thickness of GaAs(001)/ZnSe due to the suppression of Ga$\text{}_{2}$Se$\text{}_{3}$ at the surface was observed.
- Źródło:
-
Acta Physica Polonica A; 1996, 90, 5; 997-1001
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł