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Wyszukujesz frazę "Kyrychenko, M." wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
System of Signal Injection and Extractioo for Protection and Insulation Monitoring in Medium Voltage Networks
Autorzy:
Kyrychenko, M.
Habrych, M.
Powiązania:
https://bibliotekanauki.pl/articles/410612.pdf
Data publikacji:
2017
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
insulation
distribution network
ground fault
signal injection
Opis:
Simple overcurrent criterion is most often used for detection and elimination of ground faults in radial industrial medium voltage networks. Since in Poland medium voltage networks work with noneffectively grounded neutral point, the ground fault currents can reach very low values, especially under high resistance faults. Such faults cannot be detected by any protection. Therefore, new methods to detect ground faults and to control the insulation in medium voltage network are of great importance. In the paper the idea for monitoring insulation parameters of the system, based on the simultaneous use of two different signals of non-industrial frequency, injected into the controlled network, is presented and discussed.
Źródło:
Present Problems of Power System Control; 2017, 8; 23-30
2084-2201
Pojawia się w:
Present Problems of Power System Control
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structure and Properties of Multilayer Nanostructured Coatings TiN/MoN Depending on Deposition Conditions
Autorzy:
Pogrebnjak, A.
Abadias, G.
Bondar, O.
Postolnyi, B.
Lisovenko, M.
Kyrychenko, O.
Andreev, A.
Beresnev, V.
Kolesnikov, D.
Opielak, M.
Powiązania:
https://bibliotekanauki.pl/articles/1365941.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.46.-w
62.20.Qp
62.25.-g
Opis:
This work presents the results of TiN/MoN coatings studying. These multilayer nanostructured coatings demonstrate dependence on depositions conditions on nanometer level. The influence of nanosized monolayer thickness on structure changing and properties of nanocomposite multilayer coatings TiN/MoN was found. Multilayer TiN/MoN coatings of the total thickness from 6.8 to 8.2 μm were obtained using C-PVD method. Thicknesses of monolayers were 2, 10, 20, 40 nm. The structure of samples was studied using X-ray diffraction (Bruker D-8 Advance) in Cu $K_{α}$ radiation, high resolution transmission electron microscopy with diffraction CFEI EO Techai F200, scanning electron microscopy with energy dispersive X-ray spectroscopy (JEOL-7001F), and microhardness measurements in dependence on indenter load. Scratch tests (friction, wear, etc.) were also provided using Rockwell-C diamond indenter (CSM Revetest Instruments) with a tip radius of 200 μm. Friction and wear behavior were evaluated using ball-on-plate sliding test on a UMT-3MT tribometer (CETR, USA). With decreasing monolayer thickness the hardness value increases, and the size of nanograins reduces. The values obtained for the friction coefficient of the multilayer system is much smaller than in nanostructured coatings of TiN (nc) or MoN (nc). Annealing showed formation of a (Ti,Mo)N solid solution and small growth of nanocrystals.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1280-1283
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Diluted Magnetic Semiconductor Investigations in Ukraine. Nature of Some Additional Lines in QW Optical Spectra
Autorzy:
Ryabchenko, S. M.
Abramishvili, V. G.
Komarov, A. V.
Semenov, Yu. G.
Kyrychenko, F. V.
Dubowski, J. J.
Powiązania:
https://bibliotekanauki.pl/articles/1968990.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Et
Opis:
The general review of the history and present-day situation of diluted magnetic semiconductor investigation in Ukraine is given by S. Ryabchenko. Some noteworthy results of diluted magnetic semiconductor investigation obtained in Ukraine are pointed out. The main features of the present day situation are mentioned also. As an example of last diluted magnetic semiconductor investigations, the new result obtained by Abramishvili, Komarov, Ryabchenko, Semenov, Kyrychenko and Dubowski for Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te/CdTe/Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te quantum well structures grown by laser ablation method are presented. A weak additional line was observed in the reflectivity spectra of a 27 Å wide quantum well with x= 0.11 in the barrier. Such additional line has not been observed in spectra of similar molecular beam epitaxy grown structures. Based on the theoretical computations of the energies and the relation of intensities of the main and additional lines we conclude that this line might be associated with hh2 → e1 transitions, which ceases to be forbidden in the presence of technologically caused asymmetry of quantum well potential profile.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 165-176
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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