- Tytuł:
- Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes
- Autorzy:
-
Poklonski, N.
Gorbachuk, N.
Nha, Vo
Shpakovski, S.
Filipenya, V.
Skuratov, V.
Kołtunowicz, T.
Kukharchyk, N.
Becker, H.
Wieck, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1402222.pdf
- Data publikacji:
- 2015-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.20.Jv
61.80.Fe - Opis:
- Silicon diodes irradiated with helium ions with energies of 4.1, 6.8 and 8.9 MeV are studied. It is shown that the mechanism determining the behaviour of frequency dependence of complex electric module and correspondingly the behavior of impedance of diodes irradiated with helium ions in the frequency region 3-200 kHz is a recharging of vacancy complexes localized in the space charge region.
- Źródło:
-
Acta Physica Polonica A; 2015, 128, 5; 891-893
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł