Autor: Kucur, B. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/ carbon nanotube, single-walled)/n-GaAs diode formed by surface polymerization
Autorzy:: Ahmetoglu, M.
Kara, A.
Kucur, B.
Powiązania:: https://bibliotekanauki.pl/articles/1070425.pdf
Data publikacji:: 2016-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 82.35.-x
85.30.-z
Opis:: Poly(ethylene glycol dimethacrylate-co-1-vinyl-1,2,4-triazole/carbon nanotube, single-walled)/n-GaAs ([P(EGDMA-VTAZ)-CNSW]/n-GaAs) diode was fabricated by using surface polymerization method. Electrical properties were carried out at several temperatures. Dark current mechanisms were investigated by using current-voltage (I-V) measurements. It was shown that the fabricated structure exhibited rectification behaviour that makes it a good candidate for electronic device applications.
Źródło:: Acta Physica Polonica A; 2016, 130, 1; 206-208
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: The Electrical Properties of Au/P3HT/n-GaAs Schottky Barrier Diode
Autorzy:: Kırsoy, A.
Ahmetoglu (Afrailov), M.
Asimov, A.
Kucur, B.
Powiązania:: https://bibliotekanauki.pl/articles/1401957.pdf
Data publikacji:: 2015-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.30.+y
81.07.Pr
Opis:: In this study, we investigated the electrical properties of the Au/P3HT/n-GaAs Schottky diode at room temperature by using current-voltage method. The values of ideality factor and barrier height of the diode were found to be 2.45 and 0.85 eV, respectively. n ideality factor greater than unity indicates that the diode exhibits non-ideal current-voltage behavior. This behavior results from the effect of series resistance and the presence of an interfacial layer. These values were also determined from the Cheung functions and the Norde method due to the non-ideal behavior of the diode and it was seen that there was an agreement with series resistance. Also the interface states energy distribution of the diode was determined from the forward bias I-V measurements by taking into account the bias dependence of the effective barrier height. The obtained electrical parameters of the Au/P3HT/n-GaAs Schottky diode are higher than that of the conventional Au/n-GaAs Schottky diodes.
Źródło:: Acta Physica Polonica A; 2015, 128, 2B; B-170-B-173
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Electrical and Optical Characteristics of $n-GaSb//n-GaIn_{0.24}AsSb//p-GaAl_{0.34}AsSb$ Heterostructure Photodiode
Autorzy:: Ahmetoglu, M.
Kucur, B.
Andreev, I.
Kunitsyna, E.
Mikhailova, M.
Yakovlev, Y.
Powiązania:: https://bibliotekanauki.pl/articles/1401231.pdf
Data publikacji:: 2015-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.-i
73.40.Kp
72.40.+w
Opis:: In the present paper, electrical and optical properties of $n-GaSb//n-GaIn_{0.24}AsSb//p-GaAl_{0.34}AsSb$ double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.
Źródło:: Acta Physica Polonica A; 2015, 127, 4; 1007-1009
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Electrical Properties of GaInAsSb/GaSb/GaAlAsSb Double Heterostructure with Low Diameter
Autorzy:: Kucur, B.
Ahmetoglu, M.
Andreev, I.
Kunitsyna, E.
Mikhailova, M.
Yakovlev, Y.
Powiązania:: https://bibliotekanauki.pl/articles/1194577.pdf
Data publikacji:: 2014-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.-c
78.66.-w
85.60.Dw
Opis:: GaInAsSb/GaSb/GaAlAsSb double heterostructures are attractive for optoelectronic devices working in the 1.5-4.8 μm wavelength region. In this paper, the current mechanisms of liquid phase epitaxy grown GaInAsSb based double heterostructures with 100 μm diameter were investigated in the temperature range 77-350 K. It was found that diffusion current dominates at the high temperature (> 240 K) and small forward bias region, while generation-recombination current dominates at intermediate temperatures (242-171 K). At low temperature region (< 171 K), the tunneling mechanism of the current flow dominates in both forward and reverse biases.
Źródło:: Acta Physica Polonica A; 2014, 125, 2; 411-413
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode
Autorzy:: Kucur, B.
Ahmetoglu, M.
Andreev, I.
Kunitsyna, E.
Mikhailova, M.
Yakovlev, Y.
Powiązania:: https://bibliotekanauki.pl/articles/1398767.pdf
Data publikacji:: 2016-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Lq
72.40.+w
85.60.-q
Opis:: In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current $(I_{sc})$ and open circuit voltage $(V_{oc})$. Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.
Źródło:: Acta Physica Polonica A; 2016, 129, 4; 767-769
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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