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Wyświetlanie 1-15 z 40
Tytuł:
A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations
Autorzy:
Dróżdż, P.
Korona, K.
Sarzyński, M.
Czernecki, R.
Skierbiszewski, C.
Muzioł, G.
Suski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1185815.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.22.-f
78.47.jd
Opis:
The potential fluctuations in III-nitride quantum wells lead to many effects like emission broadening and S-shape energy vs. temperature dependence. The best description of the energy dependence comes from calculations based on Gaussian density of states. However, in most of the published reports, changes of carrier lifetime with energy and temperature are not taken into account. Since experimental evidence shows that lifetime significantly depends on energy and temperature, here we propose a model that describes two basic parameters of luminescence: lifetime of carries and emission energy as a function of temperature in the case of quantum wells and layers that are characterized by potential fluctuations. Comparison of the measured energy and lifetime dependences on temperature in specially grown InGaN/GaN quantum wells and InAlGaN layer shows very good agreement with the proposed theoretical approach.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1209-1212
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Absorption and Emission Properties of Light Emitting Diode Structures Containing GaInN/GaN QWs
Autorzy:
Binder, J.
Korona, K.
Borysiuk, J.
Wysmołek, A.
Baeumler, M.
Köhler, K.
Kirste, L.
Powiązania:
https://bibliotekanauki.pl/articles/1492933.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
72.40.+w
73.61.Ey
Opis:
In this work we present measurements of GaInN/GaN light emitting diodes (LEDs) with an active layer consisting of three quantum wells made of $Ga_{0.9}In_{0.10}N$ that have different widths (1.8 nm, 2.7 nm, 3.7 nm). A comparison of emission and absorption (photocurrent) on the same sample revealed a shift in energy, with the emission energy being significantly lower. The shifts are about 0.02 eV, 0.03 eV, and 0.04 eV for the quantum wells having the widths of 1.8 nm, 2.7 nm, and 3.7 nm, respectively. This can be explained by a shift of the ground state energy caused by the quantum confined Stark effect. Calculations show that due to the spontaneous polarization and the piezoelectric effect a strong electric field of the order of 1 MV/cm was present in the GaInN quantum wells. Simulations of ground-state energies in the model of an infinite square well under the influence of an electric field with a matched effective well width were performed and used to interpret the experimental results.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 918-920
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anharmonic Optical Phonon Effects in ZnO Nanocrystals
Autorzy:
Khusnutdinov, S. V.
Dynowska, E.
Zaleszczyk, W.
Makhniy, V. P.
Wysmołek, A.
Korona, K. P.
Powiązania:
https://bibliotekanauki.pl/articles/2048106.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ga
74.25.nd
63.20.kg
Opis:
Zinc oxide (ZnO) is a very promising material for optoelectrical devices operating at the short-wavelength end of the visible spectral range and at the near UV. The Raman scattering studies of ZnO heterolayers formed by isothermal annealing show sharp phonon lines. In addition to the A$\text{}_{1}$(TO), E$\text{}_{1}$(TO), E$\text{}_{2}^{H}$, and E$\text{}_{1}$(LO) one-phonon lines, we observed two-phonon lines identified as: E$\text{}_{2}^{H}$ - E$\text{}_{2}^{L}$, E$\text{}_{2}^{H}$ + E$\text{}_{2}^{L}$, and 2LO at 332, 541, and 1160 cm$\text{}^{-1}$, respectively (at room temperature). The identification of the E$\text{}_{2}^{H}$ - E$\text{}_{2}^{L}$ peak was confirmed by its thermal dependence. Temperature dependent measurements in the range 6-300 K show that the phonon frequencies decrease with temperature. The E$\text{}_{2}^{H}$ peak is at energy 54.44 meV (439.1 cm$\text{}^{-1}$), at 4 K and due to phonon-phonon anharmonic interaction, its energy decreases to 54.33 meV (438.2 cm$\text{}^{-1}$) at room temperature. The Grüneisen parameter found for this oscillation mode was γ$\text{}_{E}$ 2H = 1.1 at about 300 K. The intensity of the E$\text{}_{2}^{H}$ - E$\text{}_{2}^{L}$ peak increases strongly with temperature and this dependence can be described by the Bose-Einstein statistics with activation energy of 13.8 meV (nearly equal to the energy of the E$\text{}_{2}^{L}$ phonon).
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 678-680
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Arsenic Antisite Defects Correlations in Low Temperature MBE GaAs
Autorzy:
Korona, K. P.
Powiązania:
https://bibliotekanauki.pl/articles/1933702.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Yg
73.61.Ey
Opis:
GaAs layers grown by molecular beam epitaxy at low temperatures (LT GaAs) have several interesting properties. For example, concentrations up to 2 × 10$\text{}^{20}$ cm$\text{}^{-3}$ of neutral and up to 5 × 10$\text{}^{18}$ cm$\text{}^{-3}$ of positively charged As$\text{}_{Ga}$defects have been determined in as grown layers. It has been observed that electrical transport in LT GaAs is dominated by hopping conductivity. In the as grown and annealed up to 400°C layers, experiments show a high mobility of photo-excited electrons up to 20000cm$\text{}^{2}$/(V s) at about 130 K. Taking into account the very high concentration of ionized defects in LT GaAs, the best possible explanation of the measured value of mobility is an assumption that As$\text{}_{Ga}^{+}$ defects interact with ionized acceptors A¯. This leads to creation of As$\text{}_{Ga}^{+}$-A¯ dipoles, which do not scatter electrons as efficiently as single ions. It has been shown that the donor-acceptor correlation could be destroyed by illumination whichv. Also analysis of hopping conductivity suggests the existence of the donor-acceptor correlations in non-illuminated LT GaAs. Numerical calculation of As$\text{}_{Ga}$-acceptors interaction has been done. It shows that at least below 200 K dipole formation in LT GaAs is possible and could lead to observed increase in mobility.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 643-653
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Badanie procesu transferu ładunku wzbudzanego światłem w organicznych ogniwach słonecznych za pomocą czasowo rozdzielczej fotoluminescencji i pobudzanego światłem elektronowego rezonansu spinowego
Detection of Photo-Induced Charge Transfer in Organic Solar Cells by Time-Resolved Photoluminescence and Light-Induced Electron Spin Reseonance
Autorzy:
Grankowska-Ciechanowicz, S.
Iwan, A.
Wołoś, A.
Korona, K. P.
Kamińska, M.
Powiązania:
https://bibliotekanauki.pl/articles/160166.pdf
Data publikacji:
2014
Wydawca:
Sieć Badawcza Łukasiewicz - Instytut Elektrotechniki
Tematy:
transfer ładunku
organiczne ogniwa słoneczne
czasowo rozdzielcza fotoluminescencja
pobudzany światłem elektronowy rezonans spinowy
charge transfer
organic solar cells
TRPL
(L)ESR
Opis:
Organiczne ogniwa słoneczne są jednym z obiecujących sposobów przetwarzania energii słonecznej w elektryczną. Procesem mającym decydujący wpływ na ich działanie, jest transfer ładunku wzbudzany światłem. Techniki pomiarowe, które znalazły zastosowanie do bezpośredniej detekcji tego procesu, to czasowo rozdzielcza fotoluminescencja (TRPL – ang. time-resolved photoluminescence) i pobudzany światłem elektronowy rezonans spinowy (LESR – ang. light-induced electron spin resonance). Efektywny transfer ładunku, przy pomocy TRPL, rejestrowany jest jako wygaszanie luminescencji w wyniku przestrzennego rozseparowania ładunków przeciwnego znaku, a za pomocą LESR jako dwie linie pochodzące od dodatniego polaronu po stronie donora i ujemnego polarnu po stronie akceptora. W niniejszej pracy omówione zostaną wymienione techniki pomiarowe oraz ich zastosowanie do detekcji efektywnego transferu ładunku w organicznych ogniwach słonecznych.
The organic solar cells are considered as promising way to convert solar energy into electricity. A crucial step in their operations is a photo-induced charge transfer (CT). Techniques, which directly detect this phenomenon, are Time-Resolved Photoluminescence (TRPL) and Light-induced Electron Spin Resonance (LESR). Effective photo-induced CT results in electrons and holes separation and creation of positive and negative polarons. First process is registered by TRPL as luminescence quenching, second by LESR as two lines, one from positive, and another from negative polarons. In this article, both techniques will be described as well their application in effective CT detection.
Źródło:
Prace Instytutu Elektrotechniki; 2014, 264; 65-71
0032-6216
Pojawia się w:
Prace Instytutu Elektrotechniki
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Coupling of LO Phonons to Excitons in GaN
Autorzy:
Wysmołek, A.
Łomiak, P.
Baranowski, J. M.
Pakuła, K.
Stępniewski, R.
Korona, K. P.
Grzegory, I.
Boćkowski, M.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1952430.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
63.20.Mt
71.55.Eq
Opis:
The photoluminescence of homoepitaxial and heteroepitaxial GaN layers is reported. It is shown that the coupling between LO phonons and neutral acceptor bound excitons is much stronger than the coupling between LO phonons and neutral donor bound excitons. In undoped homoepitaxial layer, in spite of that the no-phonon emission due to donor bound excitons is one order of magnitude stronger than the acceptor bound excitons emission, the predominant structure in the LO phonon replica of the excitonic spectrum is related to optical transitions involving acceptor bound excitons. Temperature studies showed that at higher temperature the LO phonon replica is related to free excitons.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 981-984
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Defects in Low-Temperature GaAs
Autorzy:
Korona, K. P.
Muszalski, J.
Kamińska, M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1923822.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.80.Ey
Opis:
Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 821-824
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep Level Transient Spectroscopic Studies of MOCVD GaN Layers Grown on Sapphire
Autorzy:
Śliwiński, A. A.
Korona, K. P.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1952204.pdf
Data publikacji:
1996-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
73.61.Ey
Opis:
The deep level transient spectroscopy of GaN heteroepitaxial layers grown on sapphire was studied. The samples were Mg doped during the growth. The as-grown material is n-type. It becomes p-type after annealing. The samples were measured in the temperature range from 77 K to 420 K. In n-type GaN, one peak (EG1) with activation energy 0.75 eV was detected. In p-type, at least three peaks were observed: AS1 at temperature about 300 K and AS2, AS3 at about 400 K. The dominating one is AS3. It has an activation energy about 1.1 eV.
Źródło:
Acta Physica Polonica A; 1996, 90, 5; 955-958
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defects Studies in As Grown and Neutron Irradiatcd Phosphorus Rich GaP
Autorzy:
Jasiński, J.
Palczewska, M.
Korona, K.
Kamińska, M.
Bourret, E. D.
Elliot, G.
Powiązania:
https://bibliotekanauki.pl/articles/1923836.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
76.30.Mi
Opis:
Semi-insulating, p- and n-type liquid encapsulated Czochralski grown phosphorus rich GaP crystals before and alter neutron irradiation were studied. EPR measurements proved that the phosphorus antisite defect P$\text{}_{Ga}$ introduced by neutron irradiation was exactly the same as in as grown materials, i.e. surrounded by four substitutional phosphorus atoms. In neutron irradiated crystals EPR showed also a signal, similar to the one found in plastically deformed GaAs and GaP. The concentrations of P$\text{}_{Ga}$ and of the other defect were estimated to be of the same order of magnitude. Two absorption bands at 0.81 and 1.12 eV were found for irradiated materials. The temperature dependence of resistivity indicated hopping as the mechanism of conduction in samples irradiated with doses higher than 4 × 10$\text{}^{16}$ cm$\text{}^{-2}$.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 829-832
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dielectric Function Theory Calculations of Polaritons in GaN
Autorzy:
Korona, K. P.
Stępniewski, R. Stępniewski
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1968249.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
71.36.+c
Opis:
Properties of polaritons (free excitons coupled with photons of similar energy) in gallium nitride are investigated by performing calculations based on dielectric function theory including all three excitons A, B and C (characteristic for the wurtzite structure). Moreover the excited states of excitons have been taken into account by adding Elliott's components to dielectric function. Energies, polarizabilities and damping constants of excitons are determined. It is shown that due to inter-exciton interactions the B and C excitons are strongly damped. It is estimated that the characteristic time of B to A relaxation is t$\text{}_{BA}$=1 ps. The exciton C lifetime is estimated τ$\text{}_{C}$=0.2 ps.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 867-870
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of Excitation Transfer Inside InAs/GaAs Quantum Dot System
Autorzy:
Korona, K. P.
Babiński, A.
Raymond, S.
Wasilewski, Z.
Powiązania:
https://bibliotekanauki.pl/articles/2046919.pdf
Data publikacji:
2006-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
72.20.Jv
78.67.Hc
78.55.Cr
Opis:
We present time-resolved photoluminescence investigations of InAs/GaAs structures containing quantum dots with the ground state at 1.43 eV. State filling effect and a Pauli blocking effect were clearly observed. These effects significantly influenced dynamics of excitation transfer from upper to lower state inside a dot leading to non-exponential dynamics. Numerical model based on nonlinear rate equations was proposed. The model described well the experimental data providing values of: lifetime of the ground state 0.53±0.03 ns, lifetime of excited state (when the ground state is full) 1.1±0.2 ns, and internal relaxation time (when the ground state is empty) 0.07±0.01 ns.
Źródło:
Acta Physica Polonica A; 2006, 110, 2; 219-224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Dynamics of Photoexcited Carriers in GaInAs/GaAs Quantum Dots
Autorzy:
Ilczuk, E.
Korona, K. P.
Babiński, A.
Kuhl, J.
Powiązania:
https://bibliotekanauki.pl/articles/2028722.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
78.47.+p
78.67.-n
Opis:
We present photocurrent and time-resolved photoluminescence investigations of AlGaAs/GaInAs/GaAs structures containing GaInAs/GaAs self-assembled quantum dots. The high electrical field in those devices significantly influences carrier dynamics. The photocurrent spectra show a double peak with maxima at 1.40 and 1.47 eV (at 80 K). These maxima are due to the GaInAs wetting layer (higher) and the quantum dots (lower). The photoluminescence spectra comprise weak excitonic luminescence from GaAs at 1.504 eV (at 80 K) and stronger and broad emission from the Ga$\text{}_{0.4}$In$\text{}_{0.6}$As quantum dots. At 300 K, the quantum dots emission has a lifetime of 1.1 ns and has a maximum at an energy of 1.38 eV. By analysis of both experiments, we can separate the influence of different radiative and nonradiative recombination processes. So, the tunneling rate: r$\text{}_{T}$=0.5 ns$\text{}^{-1}$ and the radiative recombination rate in the quantum dots: r$\text{}_{RQD}$=0.4 ns$\text{}^{-1}$ have been determined. The high tunneling probability (due to the influence of the built-in electric field) reveals that the tunneling effect is important for the recombination and transport processes in our structures.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 379-386
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Efficient Emission from InAlGaAs Single Quantum Dots with Low Lattice Misfit and AlGaAs Indirect Bandgap Barrier
Autorzy:
Słupiński, T.
Korona, K.
Papierska, J.
Borysiuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1398581.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.22.-f
78.47.jd
Opis:
We report on molecular beam epitaxy growth and properties of rarely studied quaternary In_{0.4}(Al_{0.75}Ga_{0.25})_{0.6}As self-assembled quantum dots, which show strong and efficient emission of red light from single quantum dots. The increased yield is, among others, due to efficient energy transfer from indirect band-gap Al_{0.75}Ga_{0.25}As barriers. To maximize photon energy emitted from quantum dots, low In composition, x_{In} = 0.4 was applied, which also lowered the lattice misfit close to the limit of 2D/3D transition in the Stranski-Krastanov growth mode. Time-resolved micro-photoluminescence shows emission at 650-750 nm. Well-resolved single quantum dot photoluminescence lines (decay time of ≈ 1-2 ns) are observed despite a high concentration ≈ 3×10¹¹ cm¯² of quantum dots. We discuss this observation assuming newly a role of carriers or excitons diffusion/tunneling between quantum dots at high surface concentration of dots and a possible role of lattice disorder inside the dot on the exciton lifetime.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1229-1232
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical and Optical Properties of Highly Non-stoichiometric GaAs
Autorzy:
Kurpiewski, A.
Korona, K.
Kamińska, M.
Palczewska, M.
Jagadish, C.
Williams, J.
Powiązania:
https://bibliotekanauki.pl/articles/1876991.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.90.+f
78.30.Er
Opis:
The studies of transport and optical properties of GaAs implanted with high arsenic doses were performed. As-implanted samples showed hopping conductivity and the exponential absorption tail in the near-IR region. Both effects were probably caused by the amorphization of implanted layer. Using EPR measurements it was found that arsenic antisite defect with high local strain field was created during implantation. Annealing of implanted layers at 600°C led to substantial removal of amorphization, decrease in absorption coefficient and hopping conductivity leading to resistive samples. The possible model of such behaviour may be similar to the one of suggested for low temperature GaAs layers.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 518-522
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
FFirst TSC and DLTS Measurements of Low Temperature GaAs
Autorzy:
Muszalski, J.
Babiński, A.
Korona, K. P.
Kamińska, E.
Piotrowska, A.
Kamińska, M.
Weber, E. R.
Powiązania:
https://bibliotekanauki.pl/articles/1891236.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
72.80.Ey
Opis:
The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 413-416
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 40

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