Autor: Kor, S. K. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Acoustical Dissipation in Some Tetrahedrally-Bonded Semiconducting Compounds
Autorzy:: Kor, S. K.
Mehrotra, P.
Powiązania:: https://bibliotekanauki.pl/articles/1933450.pdf
Data publikacji:: 1995-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 62.65.+k
62.20.-x
62.80.+f
Opis:: Phonon-phonon coupling and thermoelastic relaxation are the principal thermal causes of ultrasonic attenuation in solids at room temperature. Second order elastic moduli and third order elastic moduli have been used to study the ultrasonic attenuation suffered by compressional and shear acoustic waves for some tetrahedrally bonded semiconducting materials, viz. GaP, InP and InAs along ⟨100⟩, ⟨110⟩ and ⟨111⟩ crystallographic directions. Attenuation in case of InP is found to be quite large as compared to GaP and InAs. The reason behind this discrepancy is due to doping of Cr in InP sample and it is also seen that ultrasonic attenuation due to phonon-phonon interaction dominates over that due to thermoelastic relaxation.
Źródło:: Acta Physica Polonica A; 1995, 87, 6; 981-983
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Ultrasonic Attenuation in Binary Alloys
Autorzy:: Kor, S. K.
Pandey, G.
Powiązania:: https://bibliotekanauki.pl/articles/1968853.pdf
Data publikacji:: 1998-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 62.20.Dc
62.65.+k
62.80.+f
Opis:: An attempt was made to study the ultrasonic attenuation in Cu-Zn, Ag-Cd, Ag-Mg and Ag-Zn alloys, due to phonon-phonon interaction at 300 K. The Morse potential was used to evaluate the second and third order elastic constants. How far the neighbouring atoms are effective and contributing to ultrasonic attenuation was studied. It is concluded that most of the ultrasonic attenuation is covered by the atoms from 1st to 8th shell. The contribution to ultrasonic attenuation due to 9th shell to 12th shell is very small. It is also concluded that alloys behave more or less in the same manner as metals.
Źródło:: Acta Physica Polonica A; 1998, 93, 3; 491-497
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Ultrasonic Attenuation in Alloys
Autorzy:: Kor, S. K.
Singh, R. K.
Powiązania:: https://bibliotekanauki.pl/articles/1929339.pdf
Data publikacji:: 1993-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 62.20.Dc
62.65.+k
Opis:: Ultrasonic attenuation was evaluated in metallic alloys, Ni$\text{}_{x}$Cu$\text{}_{1-x}$ (x = 1.00, 0.70, 0.60, 0.45 and 0) due to phonon-phonon (p-p) interaction and thermoelastic loss in a wide temperature region along ⟨110⟩ crystallographic direction for longitudinal and shear waves. Ultrasonic Grüneisen parameters, nonlinearity constants and ultrasonic attenuation due to p-p interaction and thermoelastic loss were determined from 50 K to 500 K using the Born-Mayer and electrostatic potentials. The results were compared with available experimental results.
Źródło:: Acta Physica Polonica A; 1993, 83, 6; 751-758
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Ultrasonic Attenuation in Dielectric Crystals
Autorzy:: Kor, S. K.
Singh, R. K.
Powiązania:: https://bibliotekanauki.pl/articles/1891964.pdf
Data publikacji:: 1991-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 62.20.Dc
62.65.+K
Opis:: Ultrasonic attenuation and non-linearity parameters have been evaluated for dielectric crystals RbCl, RbBr and RbI in a wide temperature range. Basic physical parameters, nearest neighbour distance and hardness parameters of the substance and Coulomb and Born-Mayer potentials have been used to obtain ultrasonic attenuation due to phonon-viscosity mechanism along (100) direction of propagation for longitudinal and shear waves. Results are as expected and it has been concluded that ultrasonic attenuation is a fundamental property of the substance.
Źródło:: Acta Physica Polonica A; 1991, 80, 6; 805-810
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Role of Arsenic Antisite Defect in Nonstoichiometric Gallium Arsenide
Autorzy:: Jasiński, J.
Kurpiewski, A.
Korοna, K.
Kamińska, M.
Ρalczewska, M.
Krotkus, A.
Marcinkievicius, S.
Liliental-Weber, Z.
Tan, H. H.
Jagadish, C.
Powiązania:: https://bibliotekanauki.pl/articles/1933772.pdf
Data publikacji:: 1995-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.30.Er
73.90.+f
Opis:: Over the last few years there have been many studies of GaAs layers grown at low temperatures (180-300°C), so called LT GaAs. The interest in LT GaAs was motivated by the potential application of 600oC annealed LT GaAs in microwave and fast optoelectronic devices because of its short photocarrier lifetime, reasonable mobility and high resistivity. These properties are associated with the nonstoichiometry of LT GaAs. Recently, studies of comparable material, nonstoichiometric GaAs produced by arsenic ion implantation have been initiated. There is still a strong controversy as to whether the arsenic antisite (As$\text{}_{Ga}$) or arsenic precipitates are responsible for unique electrical properties of both materials. This paper presents the results of structural and electrical studies of high energy As implanted GaAs and comments on relationships between the structure and the resulting electrical properties.
Źródło:: Acta Physica Polonica A; 1995, 88, 4; 747-750
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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