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    Wyświetlanie 1-9 z 9
    Tytuł:
    2D material infrared and terahertz detectors : status and outlook
    Autorzy:
    Rogalski, Antoni
    Kopytko, Małgorzata
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/1818243.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    2D material photodetectors
    terahertz detectors
    infrared detectors
    graphene
    BLIP performance
    HgCdTe photodiodes
    Opis:
    Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors. Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data. At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.
    Źródło:
    Opto-Electronics Review; 2020, 28, 3; 107--154
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    2D material infrared and terahertz detectors : status and outlook
    Autorzy:
    Rogalski, Antoni
    Kopytko, Małgorzata
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/1818245.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    2D material photodetectors
    terahertz detectors
    infrared detectors
    graphene
    BLIP performance
    HgCdTe photodiodes
    Opis:
    Graphene applications in electronic and optoelectronic devices have been thoroughly and intensively studied since graphene discovery. Thanks to the exceptional electronic and optical properties of graphene and other two-dimensional (2D) materials, they can become promising candidates for infrared and terahertz photodetectors. Quantity of the published papers devoted to 2D materials as sensors is huge. However, authors of these papers address them mainly to researches involved in investigations of 2D materials. In the present paper this topic is treated comprehensively with including both theoretical estimations and many experimental data. At the beginning fundamental properties and performance of graphene-based, as well as alternative 2D materials have been shortly described. Next, the position of 2D material detectors is considered in confrontation with the present stage of infrared and terahertz detectors offered on global market. A new benchmark, so-called “Law 19”, used for prediction of background limited HgCdTe photodiodes operated at near room temperature, is introduced. This law is next treated as the reference for alternative 2D material technologies. The performance comparison concerns the detector responsivity, detectivity and response time. Place of 2D material-based detectors in the near future in a wide infrared detector family is predicted in the final conclusions.
    Źródło:
    Opto-Electronics Review; 2020, 28, 3; 107--154
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of performance limits of HOT HgCdTe photodiodes with 2D material infrared photodetectors
    Autorzy:
    Rogalski, Antoni
    Kopytko, Małgorzata
    Martyniuk, Piotr
    Hu, Weida
    Powiązania:
    https://bibliotekanauki.pl/articles/1818250.pdf
    Data publikacji:
    2020
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    2D material photodetectors
    HOT infrared detectors
    HgCdTe photodiodes
    p-i-n depleted photodiodes
    BLIP performance
    Opis:
    The semiempirical rule, “Rule 07” specified in 2007 for P-on-n HgCdTe photodiodes has become widely popular within infrared community as a reference for other technologies, notably for III-V barrier photodetectors and type-II superlattice photodiodes. However, in the last decade in several papers it has been shown that the measured dark current density of HgCdTe photodiodes is considerably lower than predicted by benchmark Rule 07. Our theoretical estimates carried out in this paper support experimental data. Graphene and other 2D materials, due to their extraordinary and unusual electronic and optical properties, are promising candidates for high-operating temperature infrared photodetectors. In the paper their room-temperature performance is compared with that estimated for depleted P i-N HgCdTe photodiodes. Two important conclusions result from our considerations: the first one, the performance of 2D materials is lower in comparison with traditional detectors existing on global market (InGaAs, HgCdTe and type- II superlattices), and the second one, the presented estimates provide further encouragement for achieving low-cost and high performance HgCdTe focal plane arrays operating in high-operating temperature conditions.
    Źródło:
    Opto-Electronics Review; 2020, 28, 2; 82--92
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
    Autorzy:
    Kopytko, Małgorzata
    Gomółka, Emilia
    Manyk, Tetiana
    Michalczewski, Krystian
    Kubiszyn, Łukasz
    Rutkowski, Jaroslaw
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/1818207.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared detector
    T2SLs
    superlattice
    III-V materials
    I-V characteristics
    Opis:
    Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
    Źródło:
    Opto-Electronics Review; 2021, 29, 1; 1--4
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Barrier in the valence band in the nBn detector with an active layer from the type-II superlattice
    Autorzy:
    Kopytko, Małgorzata
    Gomółka, Emilia
    Manyk, Tetiana
    Michalczewski, Krystian
    Kubiszyn, Łukasz
    Rutkowski, Jaroslaw
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/1818204.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    infrared detector
    T2SLs
    superlattice
    III-V materials
    I-V characteristics
    Opis:
    Numerical analysis of the dark current (Id) in the type-II superlattice (T2SL) barrier (nBn) detector operated at high temperatures was presented. Theoretical calculations were compared with the experimental results for the nBn detector with the absorber and contact layers in an InAs/InAsSb superlattice separated AlAsSb barrier. Detector structure was grown using MBE technique on a GaAs substrate. The k·p model was used to determine the first electron band and the first heavy and light hole bands in T2SL, as well as to calculate the absorption coefficient. The paper presents the effect of the additional hole barrier on electrical and optical parameters of the nBn structure. According to the principle of the nBn detector operation, the electrons barrier is to prevent the current flow from the contact layer to the absorber, while the holes barrier should be low enough to ensure the flow of optically generated carriers. The barrier height in the valence band (VB) was adjusted by changing the electron affinity of a ternary AlAsSb material. Results of numerical calculations similar to the experimental data were obtained, assuming the presence of a high barrier in VB which, at the same time, lowered the detector current responsivity.
    Źródło:
    Opto-Electronics Review; 2021, 29, 1; 1--4
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Review of photodetectors characterization methods
    Autorzy:
    Bielecki, Zbigniew
    Achtenberg, Krzysztof
    Kopytko, Małgorzata
    Mikołajczyk, Janusz
    Wojtas, Jacek
    Rogalski, Antoni
    Powiązania:
    https://bibliotekanauki.pl/articles/2173660.pdf
    Data publikacji:
    2022
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    photodetectors
    detector parameters
    photodetector characteristics
    measurements of detector parameters
    fotodetektor
    parametry detektora
    charakterystyka fotodetektora
    pomiary parametrów detektora
    Opis:
    The review includes results of analyses and research aimed at standardizing the concepts and measurement procedures associated with photodetector parameters. Photodetectors are key components that ensure the conversion of incoming optical radiation into an electrical signal in a wide variety of sophisticated optoelectronic systems and everyday devices, such as smartwatches and systems that measure the composition of the Martian atmosphere. Semiconductor detectors are presented, and they play a major role due to their excellent optical and electrical parameters as well as physical parameters, stability, and long mean time to failure. As their performance depends on the manufacturing technology and internal architecture, different types of photodetectors are described first. The following parts of the article concern metrological aspects related to their characterization. All the basic parameters have been defined, which are useful both for their users and their developers. This allows for the verification of photodetectors’ workmanship quality, the capabilities of a given technology, and, above all, suitability for a specific application and the performance of the final optoelectronic system. Experimentally validated meteorological models and equivalent diagrams, which are necessary for the correct analysis of parameter measurements, are also presented. The current state of knowledge presented in recognized scientific papers and the results of the authors’ works are described as well.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2022, 70, 2; art. no. e140534
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    HgCdTe energy gap determination from photoluminescence and spectral response measurements
    Autorzy:
    Murawski, Krzysztof
    Kopytko, Małgorzata
    Madejczyk, Paweł
    Majkowycz, Kinga
    Martyniuk, Piotr
    Powiązania:
    https://bibliotekanauki.pl/articles/2204344.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    infrared detectors
    HgCdTe
    photoluminescence
    spectral responsivity
    semiconductor energy gap
    Opis:
    The temperature dependence of photoluminescence spectra has been studied for the HgCdTe epilayer. At low temperatures, the signal has plenty of band-tail states and shallow/deep defects which makes it difficult to evaluate the material bandgap. In most of the published reports, the photoluminescence spectrum containing multiple peaks is analyzed using a Gaussian fit to a particular peak. However, the determination of the peak position deviates from the energy gap value. Consequently, it may seem that a blue shift with increasing temperature becomes apparent. In our approach, the main peak was fitted with the expression proportional to the product of the joint density of states and the Boltzmann distribution function. The energy gap determined on this basis coincides in the entire temperature range with the theoretical Hansen dependence for the assumed Cd molar composition of the active layer. In addition, the result coincides well with the bandgap energy determined on the basis of the cut-off wavelength at which the detector response drops to 50% of the peak value.
    Źródło:
    Metrology and Measurement Systems; 2023, 30, 1; 183--194
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    SRH suppression mechanism in a non-equilibrium MWIR HgCdTe photodiode
    Autorzy:
    Kopytko, Małgorzata
    Powiązania:
    https://bibliotekanauki.pl/articles/2204220.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    HgCdTe photodiode
    non-equilibrium conditions
    fully-depleted photodiode
    minority carrier lifetime
    generation rates
    Opis:
    The operation of narrow-gap semiconductor devices under non-equilibrium mode is used at temperatures where the materials are normally intrinsic. The phenomenon of minority carrier exclusion and extraction was particularly discussed in the case of the suppression of Auger thermal generation in heterojunction photodiodes, especially important in the long-wave infrared range. This paper shows that the reduction of the dark current in the HgCdTe photodiode operating in the mid-wave infrared range is primarily the result of suppression of the Shockley-Read-Hall generation in the non-equilibrium absorber. Under a reverse bias, the majority carrier concentration is held equal to the majority carrier doping level. This effect also leads to a decreased majority carrier population at the trap level and an effective increase in the carrier lifetime. The analysed device was with the following design: p+-Bp cap-barrier unit, p-type absorber doped at the level of 8 ·10¹⁵ cm¯³, and wide-bandgap N+ bottom contact layer. At room temperature, the lowest dark current density of 3.12 ·10¯¹ A/cm² was consistent with the theoretically predicted Shockley-Read-Hall suppression mechanism, about two times smaller than for the equilibrium case.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144548
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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