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Wyszukujesz frazę "Koide, K." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Evaluation of reliability of perioral muscle pressure measurements using a newly developed device with a lip piece
Autorzy:
Takahashi, M.
Koide, K.
Suzuki, H.
Satoh, Y.
Iwasaki, S.-I.
Powiązania:
https://bibliotekanauki.pl/articles/306575.pdf
Data publikacji:
2016
Wydawca:
Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:
nacisk
wiarygodność
mięśnie
jama ustna
tongue pressure
upper lip pressure
lower lip pressure
absolute reliability
relative reliabilit
Opis:
Purpose: We examined the reliability of measurements using a newly developed perioral muscle pressure measuring device with a lip piece in healthy adults. Methods: Subjects were 40 healthy men (25.8 years) with normal stomatognathic function. Perioral muscle pressure measuring device with a lip piece was used to measure upper lip, lower lip and tongue pressure, and a balloon-based measurement device was used to measure tongue and cheek pressure. Each measurement was taken twice with a 1-min interval between the two measurements. We determined intra-rater reliability by using the intra-class correlation coefficient as a test of relative reliability. As a test of absolute reliability, Bland–Altman analysis was used to assess systematic bias and the 95% confidence interval of the minimal detectable change was calculated. Additionally, the coefficient of variation was calculated. The Spearman–Brown formula was calculated the number of measurements needed to achieve a confidence coefficient ≥0.9. Each set of measurements was followed by a second set that were taken 1 week later. Results: All measurements showed high values of intra-class correlation coefficient. Upper lip, tongue, and cheek pressure can be determined based on a single measurement, while lower lip pressure requires averaging twice. No systematic bias was observed. The coefficients of variation of measurements were almost the same between the two devices. Conclusion: Measurements were highly reliable regardless of the type of perioral muscles. Our findings suggest that the method described in this study is useful as a quantitative chair side method for examining perioral muscle pressure.
Źródło:
Acta of Bioengineering and Biomechanics; 2016, 18, 1; 145-153
1509-409X
2450-6303
Pojawia się w:
Acta of Bioengineering and Biomechanics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Variation Analysis of CMOS Technologies Using Surface-Potential MOSFET Model
Autorzy:
Mattausch, H. J.
Yumisaki, A.
Sadachika, N.
Kaya, A.
Johguchi, K.
Koide, T.
Miura-Mattausch, M.
Powiązania:
https://bibliotekanauki.pl/articles/308251.pdf
Data publikacji:
2009
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
compact model
fabrication inaccuracy
field-effect transistor
macroscopic
microscopic
potential at channel surface
silicon
within wafer
Opis:
An analysis of the measured macroscopic withinwafer variations for threshold voltage (Vth) and on-current (Ion) over several technology generations (180 nm, 100 nm and 65 nm) is reported. It is verified that the dominant microscopic variations of the MOSFET device can be extracted quantitatively from these macroscopic variation data by applying the surface-potential compact model Hiroshima University STARC IGFET model 2 (HiSIM2), which is presently brought into industrial application. Only a small number of microscopic parameters, representing substrate doping (NSUBC), pocket-implantation doping (NSUBP), carrier-mobility degradation due to gate-interface roughness (MUESR1) and channel-length variation during the gate formation (XLD) are found sufficient to quantitatively reproduce the measured macroscopic within-wafer variations of Vth and Ion for all channel length Lg and all technology generations. Quantitative improvements from 180 nm to 65 nm are confirmed to be quite large for MUESR1 (about 70%) and Lmin(XLD) (55%) variations, related to the gate-oxide interface and the gate-stack structuring, respectively. On the other hand, doping-related technology advances, which are reflected by the variation magnitudes of NSUBC (30%) and NSUBP (25%), are found to be considerably smaller. Furthermore, specific combinations of extreme microscopic parameter-variation values are able to represent the boundaries of macroscopic fabrication inaccuracies for Vth and Ion. These combinations are found to remain identical, not only for all Lg of a given technology node, but also for all investigated technologies with minimum Lg of 180 nm, 100 nm and 65 nm.
Źródło:
Journal of Telecommunications and Information Technology; 2009, 4; 37-44
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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