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Wyszukujesz frazę "Kiprijanovič, L." wg kryterium: Autor

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    Tytuł:
    The Electric Field and Temperature Dependence of Conductance of Two-Dimensional Electron Gas in AlGaN/AlN/GaN
    Autorzy:
    Ardaravičius, L.
    Kiprijanovič, O.
    Liberis, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813392.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Jv
    73.40.Kp
    73.50.Fq
    Opis:
    The two-dimensional gas in AlGaN/AlN/GaN heterostucture with a very thin (0.6 nm) AlN spacer was investigated by conductivity relaxation measurements in 86-300 K temperature range. The results show the presence of two exponential relaxation processes characterized by different characteristic time constants. Parameters of the fast and slow components of the processes differently depend on the electric field and temperature. The fast process is attributed to influence of the electric field on the barrier formed by the spacer, while the slow process is attributed to the hot-electron capture out of the channel followed by electron thermal release.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 1001-1004
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spectra of Wideband Dipole Radiation Induced by the Photomagnetoelectric Response in Narrow Gap Semiconductors
    Autorzy:
    Kiprijanovič, O.
    Shatkovskis, E.
    Kiprijanovič, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812040.pdf
    Data publikacji:
    2008-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.65.Re
    71.55.Gs
    75.50.Pp
    Opis:
    The frequency spectra of sign inverted photomagnetoelectric responses in narrow gap semiconductors InSb, InAs, and $Cd_{0.2}Hg_{0.8}Te$, excited by nanosecond laser light pulses, were used for calculation of induced electromagnetic radiation frequency spectra in dipole approximation. The parallelepiped shape sample was considered as capacitor-like point dipole. The known Fourier transform property was used in calculations. Features of double sign inverted signals formation and its spectra are considered and compared with experimental results. The radiation of pulses, having spectra in terahertz range when excited by picosecond laser pulse from capacitor-like radiators that demonstrate double sign inverted photoresponses, is expected.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 4; 761-767
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hot-Phonon Decided Carrier Velocity in AlInN/GaN Based Two-Dimensional Channels
    Autorzy:
    Ardaravičius, L.
    Kiprijanovič, O.
    Liberis, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506207.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Fq
    73.40.Kp
    Opis:
    Nanosecond-pulsed measurements of hot-electron transport were performed for a nominally undoped two-dimensional channel confined in a slightly strained $Al_{0.8}In_{0.2}N$/AlN/GaN and nearly lattice matched $Al_{0.84}In_{0.16}N$/AlN/GaN heterostructures at room temperature. No current saturation is reached because we minimized the effect of the Joule heating. The electron drift velocity is deduced under assumption of uniform electric field and field-independent electron density. The estimated drift velocity ≈ 1.5 × $10^7$ cm/s at 140 kV/cm bodes well with the value of hot-phonon lifetime exceeding 0.1 ps.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 231-233
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hot-Electron Transport and Microwave Noise in 4H-SiC
    Autorzy:
    Ardaravičius, L.
    Liberis, J.
    Kiprijanovič, O.
    Matulionienė, I.
    Matulionis, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041761.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Ht
    72.70.+m
    73.40.Kp
    Opis:
    Hot-electron transport and microwave noise are investigated for n-type 4H-SiC (n=2×10$\text{}^{17}$ cm$\text{}^{-3}$) subjected to a pulsed electric field applied parallel to the basal plane. At room temperature, the negative differential conductance, masked by field ionization at the highest fields, is observed in the field range between 280 and 350 kV/cm. The threshold fields for the negative differential conductance and field ionization increase with lattice temperature. The results on microwave noise are used to evaluate the effective hot-electron temperature and the hot-electron energy relaxation time.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 310-314
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electroresistance of La-Ca-MnO Thin Films
    Autorzy:
    Cimmperman, P.
    Stankevič, V.
    Žurauskienė, N.
    Balevičius, S.
    Anisimovas, F.
    Paršeliūnas, J.
    Kiprijanovič, O.
    Altgilbers, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/2037104.pdf
    Data publikacji:
    2004
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Gr
    73.50.Lw
    73.63.Bd
    Opis:
    Epitaxial, textured, and polycrystalline La$\text{}_{0.7}$Ca$\text{}_{0.3}$Mn O$\text{}_{3}$ films, having about 150 nm thickness, were prepared by pulsed laser deposition techniques onto (110) NdGaO$\text{}_{3}$, MgO and lucalox substrates and investigated using 10 ns duration, 0.5 ns rise time electrical pulses having amplitude up to 500 V. Electroresistance of the films [R(E)-R(0)]/R(0) was investigated up to 80 kV/cm electric field strengths in temperatures ranging from 300 K to 4.2 K. Strong (up to 93%) negative electroresistance was obtained in polycrystalline La$\text{}_{0.7}$Ca$\text{}_{0.3}$MnO$\text{}_{3}$ films prepared on MgO and lucalox substrates. The epitaxial films grown on NdGaO$\text{}_{3}$ substrate demonstrated only a small resistance change due to Joule heating induced by a current pulse. It was concluded that electroresistance manifests itself in strongly inhomogeneous manganites films exhibiting a large number of structural imperfections producing ferromagnetic tunnel junction nets.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 1-2; 107-114
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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