- Tytuł:
- Formation of Porous $n-A_3B_5$ Compounds
- Autorzy:
-
Šimkiene, I.
Kindurys, A.
Treideris, M.
Sabataityte, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1813482.pdf
- Data publikacji:
- 2008-03
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.05.-t
81.05.Rm
81.05.Ea - Opis:
- Porous layers of $A_3B_5$ compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area $(1.5×1.5 cm^2)$ porous layers of uniform porosity were produced by anodization process of n-type $A_3B_5$ semiconductors,
- Źródło:
-
Acta Physica Polonica A; 2008, 113, 3; 1085-1090
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł