- Tytuł:
- On possibility to extend the operation temperature range of SOI sensors with polysilicon piezoresistors
- Autorzy:
-
Druzhinin, A.
Lavitska, E.
Maryamova, I.
Kogut, I.
Khoverko, Y. - Powiązania:
- https://bibliotekanauki.pl/articles/307642.pdf
- Data publikacji:
- 2001
- Wydawca:
- Instytut Łączności - Państwowy Instytut Badawczy
- Tematy:
-
SOI
mechanical sensors
poly-Si piezoresistor
ZMR - Opis:
- The aim of this work was to study the possibilities of developing mechanical sensors with poly-Si piezoresistors on insulating substrate for operation in different temperature ranges (low, elevated and high temperatures). Laser recrystallization is used as a technological tool to adjust the electrical and piezoresistive parameters of the polysilicon layer. For this purpose a set of studies including numerical simulation and experimental work has been carried out. The main three directions of the studies are considered: problems of thermal stabilization of the pressure sensor performance at elevated and high temperatures; problem of sensor operation at cryogenic temperatures; development of a multifunctional pressure-temperature sensor.
- Źródło:
-
Journal of Telecommunications and Information Technology; 2001, 1; 40-45
1509-4553
1899-8852 - Pojawia się w:
- Journal of Telecommunications and Information Technology
- Dostawca treści:
- Biblioteka Nauki
Artykuł