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Wyszukujesz frazę "Khan, A, Q." wg kryterium: Autor

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    Wyświetlanie 1-4 z 4
    Tytuł:
    Integrated design of observer based fault detection for a class of uncertain nonlinear systems
    Autorzy:
    Chen, W.
    Khan, A, Q.
    Abid, M.
    Ding, S. X.
    Powiązania:
    https://bibliotekanauki.pl/articles/907595.pdf
    Data publikacji:
    2011
    Wydawca:
    Uniwersytet Zielonogórski. Oficyna Wydawnicza
    Tematy:
    detekcja uszkodzeń
    obserwator
    system nieliniowy
    optymalizacja
    odporność
    fault detection
    observer
    nonlinear system
    optimization
    robustness
    Opis:
    Integrated design of observer based Fault Detection (FD) for a class of uncertain nonlinear systems with Lipschitz nonlinearities is studied. In the context of norm based residual evaluation, the residual generator and evaluator are designed together in an integrated form, and, based on it, a trade-off FD system is finally achieved in the sense that, for a given Fault Detection Rate (FDR), the False Alarm Rate (FAR) is minimized. A numerical example is given to illustrate the effectiveness of the proposed design method.
    Źródło:
    International Journal of Applied Mathematics and Computer Science; 2011, 21, 3; 423-430
    1641-876X
    2083-8492
    Pojawia się w:
    International Journal of Applied Mathematics and Computer Science
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Development and Study of High Energy Igniter/Booster Pyrotechnic Compositions for Impulse Cartridges
    Autorzy:
    Khan, A.
    Malik, A. Q.
    Lodhi, Z. H.
    Powiązania:
    https://bibliotekanauki.pl/articles/358209.pdf
    Data publikacji:
    2017
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Przemysłu Organicznego
    Tematy:
    calorific value
    max no fire current
    stray voltage
    static discharge
    peak pressure
    Opis:
    In order to suitably initiate an impulse cartridge and to get the desired peak pressure, high energy igniter and booster pyrotechnic compositions may be required. Studies were undertaken to develop different types of high energy igniter and booster pyrotechnic compositions comprising B/KNO3, Zr/KClO4 and Pb(SCN)2/KClO3 as igniter compositions, and B/Mg/KClO4/Bi2O3 and B/Mg/KClO4 as booster compositions. Different ratios of fuels and oxidizers were studied in order to determine the best igniter and booster compositions. The measurement of the calorific values for the igniter and the booster compositions, along with safety tests of the igniter compositions, were performed. The pattern of calorific values observed for the igniter and booster compositions under study were B/KNO3 > Zr/KClO4 > Pb(SCN)2/KClO3 and B/Mg/KClO4 > B/Mg/KClO4/Bi2O3, respectively. The newly-developed high energy igniter compositions passed all of the safety tests. Both igniter and booster compositions were also subjected to functional tests in an impulse cartridge. The functional tests were intended for the determination of peak pressure and time to peak pressure. These high energy igniter and booster compositions increased the peak pressure by 8.3% and reduced the time to peak pressure by 14.3% for an impulse cartridge in a closed chamber of volume 230 cm3. The consequence of this research work is that the best combination of igniter and booster compositions in terms of safety, calorific values and cartridge functionality are Zr/KClO4 (40/60) and B/Mg/KClO4 (30/10/60), respectively.
    Źródło:
    Central European Journal of Energetic Materials; 2017, 14, 4; 933-951
    1733-7178
    Pojawia się w:
    Central European Journal of Energetic Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence of Highly Excited Nonpolar a-Plane GaN and AlGaN/GaN Multiple Quantum Wells
    Autorzy:
    Juršėnas, S.
    Kuokštis, E.
    Miasojedovas, S.
    Kurilčik, G.
    Žukauskas, A.
    Chen, C. Q.
    Yang, J. W.
    Adivarahan, V.
    Asif Khan, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038100.pdf
    Data publikacji:
    2004-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.21.Fg
    72.20.Jv
    78.47.+p
    Opis:
    Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient of luminescence featured a significant enhancement in nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial lateral overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells was shown to be determined by the substrate quality.
    Źródło:
    Acta Physica Polonica A; 2004, 105, 6; 567-573
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Luminescence of Highly Photoexcited GaN Epilayers and Heterostructures Grown on Different Sapphire Crystal Planes
    Autorzy:
    Juršėnas, S.
    Miasojedovas, S.
    Kurilčik, G.
    Liuolia, V.
    Žukauskas, A.
    Chen, C. Q.
    Yang, J. W.
    Kuokštis, E.
    Adivarahan, V.
    Asif Khan, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041736.pdf
    Data publikacji:
    2005-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Cr
    73.21.Fg
    72.20.Jv
    78.47.+p
    Opis:
    GaN epilayers and AlGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on different crystal planes (c, a, and r) of the sapphire substrate were studied by excitation intensity dependent and time-resolved photoluminescence. In polar multiple quantum wells grown on a- and c-planes, a blueshift of the luminescence band with increasing the excitation energy was observed, indicating that screening of built-in field by free carriers takes place, whereas in nonpolar r-plane grown multiple quantum wells, the luminescence band maintained an almost constant peak position. Full screening of built-in field was achieved at the excitation densities higher than 0.3 mJ/cm$\text{}^{2}$. Under conditions of screened built-in electric field the structures were characterized by carrier lifetime. It was shown that nonpolar multiple quantum wells suffer from high density of nonradiative traps that can be due to substrate related threading dislocations.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 2; 235-239
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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