Autor: Kawai, H. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Concentration Dependence of Photo-Induced Magnetization in Diluted Magnetic Semiconductor Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
Autorzy:: Yamaguchi, Y.
Kawai, H.
Sato, T.
Powiązania:: https://bibliotekanauki.pl/articles/1956517.pdf
Data publikacji:: 1997-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Lk
75.50.Pp
Opis:: The photo-induced decrease in magnetization ΔM$\text{}_{photo}$ was observed in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te (0.25 < x < 0.42) under unpolarized light illumination whose photon energy is smaller than the band gap of the sample. The photo-induced magnetization decreases with increasing Mn content through Mn$\text{}^{2+}$-Mn$\text{}^{2+}$ antiferromagnetic interaction, which supports our idea for origin of it based on the flipping of Mn spins in the bound magnetic polarons accompanied by the spin-flip Raman scattering.
Źródło:: Acta Physica Polonica A; 1997, 91, 2; 479-482
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Detection of Shallow Dislocations on 4H-SiC Substrate by Etching Method
Autorzy:: Ishikawa, Y.
Yao, Y.
Sato, K.
Sugawara, Y.
Danno, K.
Suzuki, H.
Bessho, T.
Kawai, Y.
Shibata, N.
Powiązania:: https://bibliotekanauki.pl/articles/1492539.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.uj
81.65.Cf
68.37.Lp
Opis:: Correlation between dislocation types in epitaxial 4H-SiC and etch pit types on the 4H-SiC wafer surface were investigated by etch pit method and transmission electron microscope. Shallow dislocation on the wafer was found to form round pit without core. The shallow dislocation was estimated half-loop type in wafer and this estimation explains that step-flow growth converts half-loop dislocation into complex dislocation composed by threading dislocation and basal plane dislocation.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-025-A-027
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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