- Tytuł:
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Termowizyjne badania spiralnych cewek scalonych w technologiach krzemowych
Thermal measurements of silicon integrated spiral inductors - Autorzy:
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Kałuża, M.
Więcek, B.
Hatzopoulos, A.
Chatziathanasiou, V.
Papagiannopoulos, I.
De May, G. - Powiązania:
- https://bibliotekanauki.pl/articles/157639.pdf
- Data publikacji:
- 2009
- Wydawca:
- Stowarzyszenie Inżynierów i Techników Mechaników Polskich
- Tematy:
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spiralne cewki scalone
modelowanie
badania termowizyjne
thermographic measurements
spiral inductors
modeling - Opis:
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Spiralne cewki scalone stanowią szczególny przypadek połączenia wewnątrzukładowego w układach scalonych. Pozwalają na bezpośrednią integrację indukcyjności w strukturach półprzewodnikowych, w standardowych technologiach CMOS/BiCMOS, bez konieczności wykonywania dodatkowych procesów technologicznych, dodatkowych fotomasek, a tym samym, bez zwiększania kosztów produkcji. W niniejszym artykule przedstawiono wyniki badań termowizyjnych spiralnych pojedynczej spiralnej cewki scalonej w technologii krzemowej i ich porównanie z wynikami symulacji.
Spiral inductors are a special case of on-chip interconnects used in integrated circuits. They enable direct integration of inductances in semiconductor structures, in standard CMOS/BiCMOS technologies, without the need of additional technological processes, additional photomasks, thus without increase in ICs production costs. Because of their relatively large sizes compared to other elements integrated on a semiconductor wafer, spiral inductors can became a source of nonnegligible interferences for neighboring circuits located on the same semiconductor structure. According to the Joule-Lenz law, a current flowing through a metal produces heat. A spiral inductor is a metal interconnect conveying current, thus one can expect that the current flowing through the spiral will heat it, changing its series resistance and changing one of the inductor key design parameters - its quality factor Q. The neighboring circuits can also be affected. So far there have hardly been any publications dealing with that subject. The goal of the research was to investigate the thermal behavior of silicon integrated spiral inductors under current stress. In the introduction, an overview of spiral inductors is presented, including their typical geometries, dimensions and applications. The second section of the paper discusses the problems of silicon integrated spiral inductor model-ing. Next, in the third section there are given the results of temperature measurements of one of the spiral inductors integrated in test circuits. A MWIR camera with a cooled InSb 640x512 pixel detector matrix was used. The measurements are compared with simulation results. The fourth section presents the conclusions drawn from the measurement results. The measurement setup used allowed the imaging of a single spiral inductor, while only a general view of the test circuit was obtained form the previous results, without the possibility to discern a single, individual spiral inductor. It is shown that there is a good agreement between the simulations and measurements. Further investigations will be required to overcome the problems encountered during the measurements, such as influence of the on-wafer probes, the order of magnitude emissivity difference between the silicon substrate and aluminum interconnects. More complicated spiral geometries will have to be investigated, especially micromachined spiral inductors, in which the inductor is suspended, and typically connected to the rest of the integrated circuit only with 4 narrow SiO2 made bridges. - Źródło:
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Pomiary Automatyka Kontrola; 2009, R. 55, nr 11, 11; 954-957
0032-4140 - Pojawia się w:
- Pomiary Automatyka Kontrola
- Dostawca treści:
- Biblioteka Nauki
Artykuł