- Tytuł:
- Analysis of current noise in MOSFET-based charge-transfer device
- Autorzy:
-
Inokawa, H.
Singh, V.
Satoh, H. - Powiązania:
- https://bibliotekanauki.pl/articles/385224.pdf
- Data publikacji:
- 2009
- Wydawca:
- Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
- Tematy:
-
low-frequency noise
MOSFET
charge-transfer device - Opis:
- Low-frequency current noise in the MOSFET-based charge-transfer devices was evaluated at room and cryogenic temperatures. Excessive noise, whose power was 25-50 times larger than that of room temperature, was observed at 20 K, and this hindered the accurate transfer of charge. Interestingly, the noise power was proportional to the square of the pulse frequency that drove the gates in these devices, and an expression for the noise was proposed to correlate it with the frequency, gate capacitance and fluctuation of the threshold voltage at the gate.
- Źródło:
-
Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 72-75
1897-8649
2080-2145 - Pojawia się w:
- Journal of Automation Mobile Robotics and Intelligent Systems
- Dostawca treści:
- Biblioteka Nauki
Artykuł