Autor: Herzog, H. G. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Degree of Fault Tolerance as a Comprehensive Parameter for Reliability Evaluation of Fault Tolerant Electric Traction Drives
Autorzy:: Bolvashenkov, I.
Herzog, H. G.
Powiązania:: https://bibliotekanauki.pl/articles/136249.pdf
Data publikacji:: 2016
Wydawca:: EEEIC International Barbara Leonowicz Szabłowska
Tematy:: reliability
degree of fault tolerance
multi-phase electric motor
multilevel inverter
traction vehicle drive
Opis:: This paper describes a new approach and methodology of quantitative assessment of the fault tolerance of electric power drive consisting of the multi-phase traction electric motor and multilevel electric inverter. It is suggested to consider such traction drive as a system with several degraded states. As a comprehensive parameter for evaluating of the fault tolerance, it is proposed to use the criterion of degree of the fault tolerance. For the approbation of the proposed method, the authors carried out research and obtained results of its practical application for evaluating the fault tolerance of the power train of an electrical helicopter.
Źródło:: Transactions on Environment and Electrical Engineering; 2016, 1, 3; 50-61
2450-5730
Pojawia się w:: Transactions on Environment and Electrical Engineering
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content
Autorzy:: Durov, S.
Mironov, O. A.
Myronov, M.
Whall, T. E.
Parker, E. H. C.
Hackbarth, T.
Hoeck, G.
Herzog, H. J.
König, U.
Känel von, H.
Powiązania:: https://bibliotekanauki.pl/articles/958103.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: SiGe
metamorphic MOSFET
LF-noise
I-V
C-V
effective hole mobility
Opis:: Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 1; 101-111
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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