- Tytuł:
- The Pressure Dependence of Transition Metal-Related Levels in GaAs
- Autorzy:
-
Babiński, A.
Baj, M.
Hennel, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1886748.pdf
- Data publikacji:
- 1991-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.Eq
62.50.+p - Opis:
- The hydrostatic pressure coefficients of V$\text{}^{3+}$ $\text{}^{/}$ $\text{}^{2+}$ acceptor level in bulk GaAs and of the 0.48 eV trap (related to Ni$\text{}^{2+}$ $\text{}^{/}$ $\text{}^{1+}$ double acceptor level) in VPE GaAs were measured by means of the DLTS technique. The obtained values are 94 meV/GPa and 196 meV/GPa relative to the bottom of the conduction band. For Ni$\text{}^{2+}$ $\text{}^{/}$ $\text{}^{1+}$ level the strong pressure dependence of the capture cross-section activation energy (60 meV/GPa) was also observed.
- Źródło:
-
Acta Physica Polonica A; 1991, 79, 2-3; 323-327
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł