Autor: Harada, H. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Preparation of thioester type of broom extractant with silver selectivity
Autorzy:: Furugou, H.
Ohto, K.
Kawakita, H.
Harada, H.
Inoue, K.
Powiązania:: https://bibliotekanauki.pl/articles/346979.pdf
Data publikacji:: 2007
Wydawca:: Politechnika Bydgoska im. Jana i Jędrzeja Śniadeckich. Wydział Technologii i Inżynierii Chemicznej
Tematy:: broom type extractant
tripodal compound
silver ion
extraction
ion selectivity
Opis:: A novel tripodal thioester type of broom extractant has been synthesized to investigate selectivity for soft metal ions. Broom extractant exhibited high extractability for silver ion compared with monopodal compound. The complexation ratio of the broom extractant and silver ion was found to be 1:1 from the result of extractant concentration dependency. For stripping of loaded silver ion, complete stripping was achieved with both 1 mol dm-3 thiourea and high concentration of acidic solutions. As an application, electrode response of silver ion was observed at concentration range of 10-3 to 10-6 M silver nitrate using broom extractant as an ionophore.
Źródło:: Ars Separatoria Acta; 2007, 5; 68-75
1731-6340
Pojawia się w:: Ars Separatoria Acta
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots
Autorzy:: Miyamura, Y.
Chen, J.
Prakash, R.
Jiptner, K.
Harada, H.
Sekiguchi, T.
Powiązania:: https://bibliotekanauki.pl/articles/1363535.pdf
Data publikacji:: 2014-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 88.40.jj
81.10.Fq
61.72.Ff
61.72.Hh
61.72.Lk
Opis:: We have studied the dislocation generation and propagation from the seed crystals during seed cast Si growth. The grown ingot was cut into a vertical wafer, followed by the dislocation imaging using X-ray topography and Secco etching. The dislocation behavior at the seed area was compared with the dislocation generation at the top surface due to the thermal stress during cooling. The dislocations at the seed/crystal interface have propagated on the {111} plane toward top. When the seed surface was not melted sufficiently, the interface defect density became high, but no clear dislocation propagation was recognized. This suggests that the thermal shock at the seed/melt interface was not high enough to propagate dislocations to the growth direction. A certain amount of dislocations has been introduced from the top into the ingot according to the thermal stress. These observations suggest that optimizing the initial growth condition is important to dislocation control.
Źródło:: Acta Physica Polonica A; 2014, 125, 4; 1024-1026
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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