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    Wyświetlanie 1-8 z 8
    Tytuł:
    Optical and Dispersion parameters of ZnS Thin Films Prepared by Flash Evaporation Method
    Autorzy:
    Bakr, N. A.
    Jandow, N. N.
    Habubi, N. F.
    Powiązania:
    https://bibliotekanauki.pl/articles/412057.pdf
    Data publikacji:
    2014
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    ZnS thin film
    flash evaporation
    Swanepoel technique
    single oscillator model
    Opis:
    Zns thin films are obtained by flash evaporation method onto preheated glass substrates. The transmittance analysis allowed the determination of refractive index and thickness using envelope method. It was found that the refractive dispersion data obeyed the single oscillator model. The calculated value of the refractive index (n0 ) was found to be equal to 2.27, which is in a good agreement with the value obtained from Cauchy’s fitting. Also the value of the optical energy gap, extinction coefficient, real and imaginary parts of the dielectric constant and optical conductivity have been measured.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2014, 20, 1; 52-63
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and characterization of porous silicon layer prepared by photo-electrochemical etching in CH3OH:HF solution
    Autorzy:
    Hadi, H.A.
    Ismail, R.A.
    Habubi, N.F.
    Powiązania:
    https://bibliotekanauki.pl/articles/412262.pdf
    Data publikacji:
    2013
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    porous silicon
    photo-electrochemical etching (PECE)
    porosity
    thickness
    XRD
    AFM
    Opis:
    Porous silicon (PS) has been fabricated by Photo-electrochemical etching. Porous silicon was anodized on n-type Si in light using a current density of 20mA/cm2 for 10 min. The porous structure formation was confirmed using XRD and AFM studies. The root mean square (RMS) roughness of the Porous silicon layer is found to be around 47.5 nm and the ten point height was 317 nm. The average of pores diameter was 419.98nm, and the grain growth is columnar with a (211) preferred orientation. The grain size of the PS was estimated from the Scherer's formula and found to be 73 nm. All the properties of the porous silicon layer, such as porosity and the thickness depend on the anodization parameters. The porosity (P) was approximately 77 %. The thickness of the layer formed during an anodization in constant current was 3.54nm in gravimetric method, while its value was 1.77nm by using the theoretical relation.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2013, 3; 29-36
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of annealing temperature on the optical properties of ZnO nanoparticles
    Autorzy:
    Ismail, R. A.
    Habubi, N. F.
    Abid, H. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/412203.pdf
    Data publikacji:
    2014
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    nanoparticles
    ZnO film
    optical properties
    drop casting technique
    Opis:
    In this work, ZnO films were prepared by drop casting technique. The films were deposited on quartz substrates under different annealing time (15,30,45 and 60 min.) at a constant temperature (800 °C). The optical properties were achieved by measuring the absorbance and transmittance spectra in the wavelength range (200-900) nm. It was found that the absorbance decreases while transmission increases as the annealing time increases, while the reflectance decreases as the annealing time increases. The optical measurements indicate the kind of transition which was a direct allowed with an average band gap energies lie between 3.3 eV and 3.54 eV with the change of annealing time.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2014, 4; 37-47
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Composition and Optical Dispersion Characterization of Nanoparticles ZnO-NiO Thin Films: Effect of Annealing Temperature
    Autorzy:
    Oboudi, S.F.
    Habubi, N.F.
    Mohamed, G.H.
    Chiad, S.S.
    Powiązania:
    https://bibliotekanauki.pl/articles/412573.pdf
    Data publikacji:
    2013
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    TCOs
    Dispersion parameters
    Thermal evaporation
    zinc oxide
    Nickel Oxide
    Opis:
    Thin films of ZnO0.7NiO0.3 have deposited on glass substrates at room temperature by using thermal evaporation technique under vacuum 10-5 mbar. The optical properties and dispersion parameters of the films have been studied. Changes in direct optical energy band gap of films were confirmed before and after annealing. The optical energy gap Eg decreased from 3.11 to 2.86 eV with increasing of annealing temperature to 200 ºC. Some of the optical absorption parameters, such as optical dispersion energies Eo and Ed, Urbach tails EU , dielectric constant ε, the average values of oscillator strength So, and wavelength of single oscillator λo have been reported. An increase in the annealing temperature causes an increase in the average oscillator strength from 62.02 to 87.71 eV.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2013, 8, 1; 78-86
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical dispersion characterization of sprayed Zn1-xMnxO thin films
    Autorzy:
    Habubi, N.F.
    Chiad, S.S.
    Oboudi, S.F.
    Toma, Z.A.
    Powiązania:
    https://bibliotekanauki.pl/articles/411575.pdf
    Data publikacji:
    2013
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    TCOs
    Dispersion parameters
    spray pyrolysis
    zinc oxide
    Zn1-xMnxO
    Opis:
    Uniform and adherent Zn1-xMnxO films have been deposited by using spray pyrolysis technique on glass substrates. The optical properties and dispersion parameters of zinc oxide have been studied as a function of doping concentration with Mn. Changes in direct optical energy band gap of cobalt oxide films were confirmed after doping, The optical energy gap Eg increased from 3.13 eV for the undoped ZnO to 3.39 eV with increasing the doping concentration of Mn to 4%. The changes in dispersion parameters and Urbach tails were investigated. An increase in the doping concentration causes a decrease in the average oscillator strength. The single-oscillator parameter has been reported.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2013, 4; 1-8
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Metal-titanium oxide / quantum dot porous silicon / silicon-metal solar cell
    Autorzy:
    Abd, Ahmad Naji
    Mishjil, Khudheir A.
    Abdulsada, Ali Hamid
    Habubi, N. F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1177996.pdf
    Data publikacji:
    2018
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    AFM
    FTIR
    TiO2
    X-Ray diffraction
    XRD
    electrochemical etching p-type silicon wafer
    nanocrystalline porous silicon
    Opis:
    In this paper, the nanocrystalline porous silicon (PSi) films are prepared by electrochemical etching of p-type silicon wafer with current density 7 mA/cm2 and etching times on the formation nano-sized pore array with a dimension of around different etching time. The films were characterized by the measurement of XRD, FTIR spectroscopy and atomic force microscopy properties (AFM). We have estimated crystallites size from X-Ray diffraction about nanoscale for porous silicon and Atomic Force microscopy confirms the nanometric size Chemical fictionalization during the electrochemical etching show on the surface chemical composition of PS. The etching possesses inhomogeneous microstructures that contain a-Si clusters (Si3–Si–H) dispersed in amorphous silica matrix. From the FTIR analyses showed that the Si dangling bonds of the as-prepared PS layer have large amount of Hydrogen to form weak Si–H bonds. The atomic force microscopy investigation shows the rough silicon surface, with increasing etching process (current density and etching time) porous structure nucleates which leads to an increase in the depth and width (diameter) of surface pits. Consequently, the surface roughness also increase.
    Źródło:
    World Scientific News; 2018, 96; 134-148
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Gamma Irradiation on the Optical Properties of Mg doped CdO Thin films deposited by Spray Pyrolysis
    Autorzy:
    Hassouni, M.H.
    Mishjil, K.A.
    Chiad, S.S.
    Habubi, N.F.
    Powiązania:
    https://bibliotekanauki.pl/articles/412503.pdf
    Data publikacji:
    2013
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    TCOs
    thin films
    optical properties
    doping film
    gamma radiation
    Opis:
    Thin films of CdO and 9 % Mg doped CdO doped have been prepared using spray pyrolysis technique. Transmission and absorption spectra were recorded in order to estimate these films. The deposited thin films were exposed to γ - rays. We have studied the transmission, absorptions and absorption coefficient as a function of photon energy before and after irradiation. The optical constants such as: reflectance, extinction coefficient, refractive index, real and imaginary parts of the dielectric constant and the electrical conductivity were calculated also.
    Źródło:
    International Letters of Chemistry, Physics and Astronomy; 2013, 11; 26-37
    2299-3843
    Pojawia się w:
    International Letters of Chemistry, Physics and Astronomy
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of molarity on the structural and optical properties of ZnO thin films deposit by CSP
    Autorzy:
    Habubi, Nadir F.
    Abood, Ziad M.
    Algamel, Ahmed N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1193915.pdf
    Data publikacji:
    2015
    Wydawca:
    Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
    Tematy:
    Urbach energy
    ZnO
    ZnO thin films
    optical properties
    structural properties
    Opis:
    ZnO thin films have been prepared by chemical spray pyrolysis technique CSP). XRD pattern reveals that the preferred orientation was varied with concentration, topography analysis was done by AFM micrograph which confirm the existence of nonstructural films. The optical properties was done by recorded the transmittane and absorbance which were affected by an increase in concentration. The values of optical energy gap obtained from Tauc relation were 3.17, 3.18 and 3.19 eV for 0.05, 0.1 and 0.5 M respectively. Urbach energy confirms the decrease in band tail as the concentration increase.
    Źródło:
    World Scientific News; 2015, 22; 55-69
    2392-2192
    Pojawia się w:
    World Scientific News
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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