Autor: Gwarek, W. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: A Dual Reflector Antenna for Point-to-Point System Applications
Autorzy:: Olszewska, M.
Gwarek, W.
Powiązania:: https://bibliotekanauki.pl/articles/1505251.pdf
Data publikacji:: 2011-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 41.20.-q
Opis:: In this paper design and realization of a dual reflector antenna for receiving internet signal in the point-to-point system is presented. Three different configurations of dual reflector antenna have been considered to obtain the antenna operating in 5.2-5.8 GHz band and having small dimensions. The results of computer simulations and measurements are shown. The design was based on electromagnetic simulations using QW-V2D package (an axisymmetrical version of finite-difference time-domain software). In measurements the method with a reference antenna was used. Additional discussion about using the main reflector of smaller diameter and decreasing spillover radiation was performed.
Źródło:: Acta Physica Polonica A; 2011, 119, 4; 558-562
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: FDTD analysis of magnetized plasma using an equivalent lumped circuit
Autorzy:: Moryc, A.
Gwarek, W.
Powiązania:: https://bibliotekanauki.pl/articles/309383.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: FDTD
tensor permittivity
dispersive
anisotropic
Opis:: The paper describes a new approach to electromagnetic analysis of magnetized plasma using finite difference time domain (FDTD) method. An equivalent lumped circuit describing an FDTD cell filled with plasma is developed and applied in the analysis. Such a method is proved more effective than previously reported methods. The new approach is verified on a canonical example of known analytical solution.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 2; 75-78
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: A 100 W ISM 2.45 GHz-band power test system
Autorzy:: Wojtasiak, W.
Gryglewski, D.
Gwarek, W.
Powiązania:: https://bibliotekanauki.pl/articles/307777.pdf
Data publikacji:: 2005
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: microwave precise heating
high power solid-state amplifier
push-pull GaAs FET
synthetsizer
power measurement unit
Opis:: This paper describes development of solid-state microwave power test system (MPTS) operating over 2.3 to 2.6 GHz with the output power level of 100 W for industrial applications in material processing, and for designing of microwave power industrial equipment. The MPTS unit consists of four major parts: PLL synthesizer, high power solid-state amplifier, detector probes for return losses and leakage measurement and microcontroller. The MPTS system is able to operate in either single fixed-frequency regime, or in swept mode with self-tuning for minimum reflection of a heated load.
Źródło:: Journal of Telecommunications and Information Technology; 2005, 2; 23-28
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Analysis and optimization of outputs of high power microwave tubes
Autorzy:: Węgrzyniak, P.
Gwarek, W.
Baczewski, D.
Powiązania:: https://bibliotekanauki.pl/articles/307618.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: high power microwave tubes
optimization of outputs
Opis:: The subject of this work is optimization of outputs of L-band high power microwave tubes. These outputs are constructed as coaxial-to-waveguide transitions with a vacuum barrier in a form of glass or ceramic cup. The goal of optimization is to obtain sufficiently low reflection loss in the predefined frequency band and to avoid so called hot spots caused by excessive dissipation of microwave power in parts of the cup. Electromagnetic simulator has been applied to model the behavior of the optimized transition and to propose its optimum shape. The proposed solutions were verified by Z.E. Lamina SA in prototypes of high power (pulsed 600 kW) amplitrons and are to be used in manufacturing practice.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 1; 35-39
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: A Computer-controlled System of High-power Microwave Sources
Autorzy:: Korpas, P.
Gryglewski, D.
Wojtasiak, W.
Gwarek, W.
Powiązania:: https://bibliotekanauki.pl/articles/226529.pdf
Data publikacji:: 2011
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: SiC
GaN
high power amplifier
PLL synthesizer
microwave sources
Opis:: The paper presents the design and hardware implementation of a computer controlled system composed of up to four high-power microwave sources. Each source provides up to 200 W of continuous wave power. Frequency of each source is stabilized within ±0.5 ppm of the nominal frequency adjustable within 2.35÷2.6 GHz range. All four sources can be synchronized to the same frequency with computer-controlled phase shift between the signals generated by each of them. The paper concentrates on the choice of components for such a system and the properties of the realized hardware implementation.
Źródło:: International Journal of Electronics and Telecommunications; 2011, 57, 1; 121-126
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 6.

Tytuł:: Mechanism of Radiation Coupling to Plasma Wave Field Effect Transistor Sub-THz Detectors
Autorzy:: Sakowicz, M.
Łusakowski, J.
Karpierz, K.
Grynberg, M.
Gwarek, W.
Knap, W.
Boubanga, S.
Powiązania:: https://bibliotekanauki.pl/articles/1811983.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 84.40.Ba
52.40.Fd
85.30.Tv
07.57.Kp
Opis:: Detection of 100 GHz and 285 GHz electromagnetic radiation by GaAs/AlGaAs field effect transistors with the gate length of 150 nm was investigated at 300 K as a function of the angleαbetween the direction of linear polarization of the radiation and the symmetry axis of the field effect transistors. The angular dependence of the detected signal was found to be Acos²(α-α₀)+C. A response of the transistor chip (including bonding wires and the substrate) to the radiation was numerically simulated. Calculations confirmed experimentally observed dependences and allowed to investigate the role of bonding wires and contact pads in coupling of the radiation to the transistor channel.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1337-1342
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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