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    Wyświetlanie 1-7 z 7
    Tytuł:
    Raman Spectroscopy of $LiFePO_4$ and $Li_3V_2(PO_4)_3$ Prepared as Cathode Materials
    Autorzy:
    Ziółkowska, D.
    Korona, K.
    Kamińska, M.
    Grzanka, E.
    Andrzejczuk, M.
    Wu, S.
    Chen, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1493017.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Hv
    82.80.Gk
    82.47.Aa
    Opis:
    Structure of samples of lithium iron vanadium phosphates of different compositions were investigated by X-rays, electron microscopy and Raman spectroscopy. The investigated salts were mainly of olivine-like and NASICON-like structures. The X-ray diffraction and the Raman scattering show different crystalline structures, which is probably caused by difference between cores of the crystallites (probed by X-rays) and their shells (probed by the Raman scattering). Most of the Raman spectra were identified with previously published data, however in the samples with high vanadium concentration we have observed new, not reported earlier modes at 835 $cm^{-1}$ and 877 $cm^{-1}$, that we identified as oscillations related to $V_2O_7^{4-}$ or $VO_4^{3-}$ anions.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 973-975
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Generation and Relaxation of Microstrains in GaN Nanocrystals under Extreme Pressures
    Autorzy:
    Grzanka, E.
    Palosz, B.
    Gierlotka, S.
    Pielaszek, R.
    Bismayer, U.
    Janik, J.
    Wells, J.
    Palosz, F.
    Porsch, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035466.pdf
    Data publikacji:
    2002-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.46.+w
    81.07.Wx
    Opis:
    Nanocrystalline powders of GaN with grain sizes ranging from 2 to 30 nm were examined under high external pressures by in situ diffraction techniques in a diamond anvil cell at DESY (HASYLAB, Station F3). The experiments on densification of pure powders under high pressure were performed without a pressure medium. The mechanism of generation and relaxation of internal strains and their distribution in nanoparticles was deduced from the Bragg reflections recorded in situ under high pressures at room temperature. The microstrain was calculated from the full-width at half-maximum (FWHM) values of the Bragg lines. It was found that microstrains in GaN crystallites are generated and subsequently relaxed by two mechanisms: generation of stacking faults and change of the size and shape of the grains occurring under external stress.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 2; 167-174
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication and Physical Properties of SiC-GaAs Nano-Composites
    Autorzy:
    Kalisz, G.
    Grzanka, E.
    Wasik, D.
    Świderska-Środa, A.
    Gierlotka, S.
    Borysiuk, J.
    Kamińska, M.
    Twardowski, A.
    Pałosz, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043724.pdf
    Data publikacji:
    2005-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.-b
    07.35.+k
    Opis:
    Nano-composites consisting of primary phase of hard nanocrystalline SiC matrix and the secondary nanocrystalline semiconductor (GaAs) phase were obtained by high-pressure zone infiltration. The synthesis process occurs in three stages: (i) at room temperature the nanopowder of SiC is compacted along with GaAs under high pressure up to 8 GPa, (ii) the temperature is increased above the melting point of GaAs up to 1600~K and, the pores are being filled with liquid, (iii) upon cooling GaAs nanocrystallites grow in the pores. Synthesis of nano-composites was performed using a toroid-type high-pressure apparatus (IHPP of the Polish Academy of Sciences, Warsaw) and six-anvil cubic press (MAX-80 at HASYLAB, Hamburg). X-ray diffraction studies were performed using a laboratory D5000 Siemens diffractometer. Phase composition, grain size, and macrostrains present in the synthesized materials were examined. Microstructure of the composites was characterized using scanning electron microscopy and high resolution transmission electron microscopy. Far-infrared reflectivity measurements were used to determine built-in strain.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 4; 717-721
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Diffraction Studies of Nanocrystals: Theory and Experiment
    Autorzy:
    Palosz, B.
    Grzanka, E.
    Gierlotka, S.
    Stel'makh, S.
    Pielaszek, R.
    Bismayer, U.
    Neuefeind, J.
    Weber, H.-P.
    Palosz, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035453.pdf
    Data publikacji:
    2002-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.46.+w
    Opis:
    Based on theoretical calculations of powder diffraction data it is shown that the assumption of the infinite crystal lattice for small particles is not justified, leads to significant changes of the diffraction patterns, and may lead to erroneous interpretation of the experimental results. An alternate evaluation of diffraction data of nanoparticles, based on the so-called "apparent lattice parameter", alp, is proposed.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 1; 57-82
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Deep Levels in GaN p-n Junctions Studied by Deep Level Transient Spectroscopy and Laplace Transform Deep-Level Spectroscopy
    Autorzy:
    Dyba, P.
    Placzek-Popko, E.
    Zielony, E.
    Gumienny, Z.
    Grzanka, S.
    Czernecki, R.
    Suski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048090.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    71.55.Eq
    73.40.Kp
    Opis:
    p$\text{}^{+}$-n GaN diodes were studied by means of conventional deep level transient spectroscopy and Laplace transform deep-level spectroscopy methods within the temperature range of 77-350 K. Deep level transient signal spectra revealed the presence of a majority and minority trap of indistinguishable signatures. The Laplace transform deep-level spectroscopy technique due to its superior resolution allows us to unambiguously identify and characterize the traps. The apparent activation energy and capture cross-section for the majority trap were found to be equal to 0.63 eV and 2 × 10$\text{}^{-16}$ cm$\text{}^{2}$ and for the minority trap 0.66 eV and 1.6 × 10$\text{}^{-15}$ cm$\text{}^{2}$. It has been confirmed that the Laplace transform deep-level spectroscopy technique is a powerful tool in characterization of the traps of close signatures.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 669-671
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Efficacy and safety of insulin pump treatment in adult T1DM patients – influence of age and social environment
    Autorzy:
    Grzanka, M.
    Matejko, B.
    Cyganek, K.
    Kozek, E.
    Malecki, M.T.
    Klupa, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/51359.pdf
    Data publikacji:
    2012
    Wydawca:
    Instytut Medycyny Wsi
    Opis:
    Introduction and objective. Continuous subcutaneous insulin infusion (CSII) via personal insulin pump is a valuable therapeutic tool in T1DM patients. However, adherence to recommended CSII- related behaviours may be of concern to young adults with intensive, variable daily activities (students, young professionals). The aim of this observational study was to estimate treatment outcomes in young adult patients with T1DM, and compare them with older individuals. Materials and methods. Overall, 140 adults with T1DM on CSII were examined, divided into 2 subgroups: 77 patients younger than 26 years of age (mean 20.6 years) and 63 older subjects (mean 39.0). We compared the glycaemic control in both groups of T1DM subjects and analyzed treatment attitudes to identify potentially modifiable behaviours influencing the efficacy of the treatment. Results. The younger individuals were characterized by significantly worse treatment outcomes, compared to the older ones: the mean HbA1c levels were 7.6 ± 1.3% and 6.9±1.3% (p=0.00001), while the mean glucose levels based on glucometer downloads were 161±33.6 mg/dL and 136±21.8 mg/dL (p=0.00001), respectively. The frequency of self-monitoring of blood glucose (SMBG) was lower in younger individuals (5.3±2.1 vs. 7.0±2.8 daily, p=0.0005, respectively); they were also less frequently used advanced pump functions, e.g. the bolus calculator (48% vs. 67% users, p=0.0014, respectively). Conclusions. The efficacy of CSII treatment observed in young T1DM adults was worse than in older patients. The reason for this phenomenon remains unclear, it may be due simply to age-dependend behaviours, to social environment, or both.
    Źródło:
    Annals of Agricultural and Environmental Medicine; 2012, 19, 3
    1232-1966
    Pojawia się w:
    Annals of Agricultural and Environmental Medicine
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration
    Autorzy:
    Grzanka, S.
    Łuka, G.
    Krajewski, T. A.
    Guziewicz, E.
    Jachymek, R.
    Purgal, W.
    Wiśniewska, R.
    Sarzyńska, A.
    Bering-Staniszewska, A.
    Godlewski, M.
    Perlin, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/2048094.pdf
    Data publikacji:
    2011-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.80.Ey
    73.40.Kp
    73.40.Lq
    Opis:
    Fabrication of low resistivity ohmic contacts to N polarity gallium nitride crystal is an important issue for the construction of the vertical current flow devices like laser diodes and high brightness light emitting diodes. Gallium nitride is a challenging material because of the high metal work function required to form a barrier-free metal-semiconductor interface. In practice, all useful ohmic contacts to GaN are based on the tunneling effect. Efficient tunneling requires high doping of the material. The most challenging task is to fabricate high quality metal ohmic contacts on the substrate because the doping control is here much more difficult that in the case of epitaxial layers. In the present work we propose a method for fabricating low resistivity ohmic contacts on N-side of GaN wafers grown by hydride vapor phase epitaxy. These crystals were characterized by a n-type conductivity and the electron concentration of the order of 10$\text{}^{17}$ cm$\text{}^{-3}$. The standard Ti/Au contact turned out to be unsatisfactory with respect to its linearity and resistance. Instead we decided to deposit high-n type ZnO layers (thickness 50 nm and 100 nm) prepared by atomic layer deposition at temperature of 200°C. The layers were highly n-type conductive with the electron concentration in the order of 10$\text{}^{20}$ cm$\text{}^{-3}$. Afterwards, the metal contact to ZnO was formed by depositing Ti and Au. The electrical characterization of such a contact showed very good linearity and as low resistance as 1.6 × 10$\text{}^{-3}$ Ω cm$\text{}^{2}$. The results indicate advantageous properties of contacts formed by the combination of the atomic layer deposition and hydride vapor phase epitaxy technology.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 5; 672-674
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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