- Tytuł:
- SiGe: A Promise into Reality?
- Autorzy:
-
Grimmeiss, H. G.
Olajos, J.
Engval, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1933670.pdf
- Data publikacji:
- 1995-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 71.55.Cn
- Opis:
- The paper summarizes a few basic properties of SiGe showing that SiGe is an interesting material for high speed electronics. The advantage of using heterostructures in silicon-based technologies is demonstrated by taking SiGe heterobipolar transistors as an example. First results obtained with very fast and low-noise heterobipolar transistors are briefly mentioned. The paper is concluded by a short discussion of a few optoelectronic properties observed in various Si/Ge and Si/Si$\text{}_{1-x}$Ge$\text{}_{x}$ strained-layer superlattices and quantum wells with particular emphasis on electroluminescence properties.
- Źródło:
-
Acta Physica Polonica A; 1995, 88, 4; 567-580
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł