- Tytuł:
- Hydrogen sensor based on field effect transistor with C–Pd layer
- Autorzy:
-
Firek, Piotr
Krawczyk, Sławomir
Wronka, Halina
Czerwosz, Elżbieta
Szmidt, Jan - Powiązania:
- https://bibliotekanauki.pl/articles/220688.pdf
- Data publikacji:
- 2020
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
FET
C-Pd layer
hydrogen sensor
field effect transistor - Opis:
- ISFET (Ion Sensitive Field Effect Transistors) microsensors are widely used for pH measurements as well as analytical and biomedical applications. At the same time, ISFET is a good candidate for testing various materials for their applications in sensitive membranes. For example, hydrogen sensitive carbonaceous films containing Pd nanocrystallites (C-Pd) make this material very interesting for sensor applications. A cost effective silicon technology was selected to fabricate n-channel transistors. The structures were coupled to specially designed double-sided PCB (Printed Circuit Board) holder. The holder enables assembly of the structure as part of an automatic stand. The last step of production of MIS structures was deposition of the C-Pd layer. The C-Pd films were fabricated by the Physical Vapor Deposition (PVD) method in which C60 and palladium acetate were evaporated. Electrical resistance of structures with C-Pd films was measured during their interaction with hydrogen. Finally, a new type of highly sensitive FET hydrogen sensor with C-Pd layer was demonstrated and characterized.
- Źródło:
-
Metrology and Measurement Systems; 2020, 27, 2; 313-321
0860-8229 - Pojawia się w:
- Metrology and Measurement Systems
- Dostawca treści:
- Biblioteka Nauki
Artykuł