Autor: Dmowski, L. H. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Photoionization of Ge¯-DX State in GaAs
Autorzy:: Piotrzkowski, R.
Dmowski, L. H.
Powiązania:: https://bibliotekanauki.pl/articles/1968412.pdf
Data publikacji:: 1997-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 63.20.Mt
71.55.-i
72.40.+w
Opis:: We have determined the efficiency of photoionization of Ge¯-DX state in GaAs as a function of photon energy. The optical ionization energy derived from the fitting is about 1.0 eV. It proves a large difference between optical and thermal ionization energies and confirms that for Ge-impurity, the broken-bond model and large lattice relaxation are valid and not the breathing mode with small lattice relaxation, resulting from the calculations presented for Ge-impurity in T.M. Schmidt, A. Fazzio, M.J. Caldas, Mater. Sci. Forum 196/201, 273 (1995).
Źródło:: Acta Physica Polonica A; 1997, 92, 5; 950-952
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Far-Infrared Narrow-Band Photodetector Based on Magnetically Tunable Cyclotron Resonance-Assisted Transitions in Pure n-Type InSb
Autorzy:: Dmowski, L. H.
Cheremisin, M.
Skierbiszewski, C.
Knap, W.
Powiązania:: https://bibliotekanauki.pl/articles/1968062.pdf
Data publikacji:: 1997-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.20.Ls
72.40.+w
78.90.+t
Opis:: We present the possibility of using magnetic field to enhance responsivity and to tune spectral range of far-infrared InSb detector (based on photoconductivity effect) beyond its standard range limited to about 30 cm$\text{}^{-1}$. We show that due to cyclotron resonance assisted transitions we can use it as a tunable detector working up to energies about 180 cm$\text{}^{-1}$ (22 meV). We have used such a detector as a spectrometer for measurements of the Landau emission from GaAs emitter.
Źródło:: Acta Physica Polonica A; 1997, 92, 4; 733-736
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Pressure Investigation of Tunneling in an InAlAs-InGaAs Double Barrier Structure
Autorzy:: Cury, L.
Dmowski, L. H.
Celeste, A.
Portal, J. C.
Davies, M.
Heath, M.
Sivco, D. L.
Cho, A. Y.
Powiązania:: https://bibliotekanauki.pl/articles/1879918.pdf
Data publikacji:: 1991-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.35.+k
73.20.Dx
79.80.+w
Opis:: AnIn$\text{}_{0.52}$Al$\text{}_{0.48}$As-In$\text{}_{0.53}$Ga$\text{}_{0.47}$As double-barrier structure was studied under hydrostatic pressures up to 15 kbar. Two resonances in the I(V) curves are observed. The possible tunneling mechanisms to interpret this effect are analysed.
Źródło:: Acta Physica Polonica A; 1991, 79, 2-3; 199-202
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap
Autorzy:: Teisseyre, H.
Perlin, P.
Leszczyński, M.
Suski, T.
Dmowski, L.
Grzegory, I.
Porowski, S.
Jun, J.
Moustakas, T. D.
Powiązania:: https://bibliotekanauki.pl/articles/1873040.pdf
Data publikacji:: 1995-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 65.70.+y
78.50.Ge
78.66.Fd
Opis:: Gallium nitride epitaxial layer grown by molecular beam epitaxy and bulk crystal grown at high pressure were examined by using X-ray diffraction methods, and by optical absorption at a wide temperature range. The free electron concentration was 6 × 10$\text{}^{17}$ cm$\text{}^{-3}$ for the layer and about 5 × 10$\text{}^{19}$ cm$\text{}^{-3}$ for the bulk crystal. The experiments revealed a different position of the absorption edge and its temperature dependence for these two kinds of samples. The structural examinations proved a significantly higher crystallographic quality of the bulk sample. However, the lattice constants of the samples were nearly the same. This indicated that a rather different electron concentration was responsible for the different optical properties via Burstein-Moss effect.
Źródło:: Acta Physica Polonica A; 1995, 87, 2; 403-406
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Blue Laser on High N$\text{}_{2}$ Pressure-Grown Bulk GaN
Autorzy:: Grzegory, I.
Boćkowski, M.
Krukowski, S.
Łucznik, B.
Wróblewski, M.
Weyher, J.
Leszczyński, M.
Prystawko, P.
Czernecki, R.
Lehnert, J.
Nowak, G.
Perlin, P.
Teisseyre, H.
Purgał, W.
Krupczyński, W.
Suski, T.
Dmowski, L.
Litwin-Staszewska, E.
Skierbiszewski, C.
Łepkowski, S.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2030423.pdf
Data publikacji:: 2001-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Opis:: In this note we report briefly on the details of pulsed-current operated "blue" laser diode, constructed in our laboratories, which utilizes bulk GaN substrate. As described in Ref. [1] the substrate GaN crystal was grown by HNPSG method, and the laser structure was deposited on the conducting substrate by MOCVD techniques (for the details see Sec. 2 and Sec. 4 of Ref.~[1], respectively).
Źródło:: Acta Physica Polonica A; 2001, 100, Supplement; 229-232
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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