Autor: Dmochowski, J. E. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Localized Spin Relaxation Due To Coupling To Effective Mass States
Autorzy:: Wilamowski, Z.
Dmochowski, J. E.
Jantsch, W.
Powiązania:: https://bibliotekanauki.pl/articles/1968446.pdf
Data publikacji:: 1997-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.10.Jm
75.50.-y
Opis:: The EPR of residual Mn in CdF$\text{}_{2}$ doped with Y, In and Ga is investigated. Although these donors are barely seen in EPR, they manifest themselves by a new effect: a drastic resonant reduction in the longitudinal relaxation rate of Mn which occurs only if the Zeeman splitting of the two subsystems coincide. In this situation, the saturation of those of the six Mn hyperfine lines is weakened which coincide with the shallow donor resonance.
Źródło:: Acta Physica Polonica A; 1997, 92, 5; 1055-1058
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: High Pressure Far-Infrared Magnetooptical Studies of Sn and S Donors in GaAs
Autorzy:: Dmochowski, J. E.
Wang, P. D.
Stradling, R. A.
Powiązania:: https://bibliotekanauki.pl/articles/1888152.pdf
Data publikacji:: 1991-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
78.50.Ge
Opis:: The diamond anvil cell technique is applied for magneto-optical far-infrared transmission experiments with LPE grown GaAs:Sn. The 1s-2p(+) intra-shallow-Γ-donor transition is investigated as a function of high hydrostatic pressure for Sn and residual S donors. Both donors are shallow up to 30 kbar. Above this pressure both donors become deep and shallow donor absorption is persistently bleached due to deep non-metastable (non DX-like) states of the donors entering the gap of GaAs.
Źródło:: Acta Physica Polonica A; 1991, 80, 2; 279-282
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Pressure Induced Shallow-Deep A$\text{}_{1}$ Transition for Sn Donor in GaAs Observed in Diamond Anvil Cell Photoluminescence Experiment
Autorzy:: Dmochowski, J. E.
Stradling, R. A.
Sly, J.
Dunstan, D. J.
Prins, A. D.
Adams, A. R.
Powiązania:: https://bibliotekanauki.pl/articles/1876148.pdf
Data publikacji:: 1995-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
Opis:: Variable-pressure Dunstan-type diamond anvil high pressure cell and a low temperature photoluminescence technique are used to observe the shallow-deep A$\text{}_{1}$ transition for Sn donors in highly Sn doped n-type (≈ 10$\text{}^{18}$ cm$\text{}^{-3}$) GaAs. Fermi level pinning to the position of the deep Sn donor state entering the gap close to 30 kbar pressure is observed. Drastic narrowing of the near-band-edge luminescence is observed in the transition region. The deep-donor pressure coefficient of 2 meV/kbar with respect to the valence band is deduced from the energy position of the deep donor-acceptor transitions.
Źródło:: Acta Physica Polonica A; 1995, 87, 2; 457-460
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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