- Tytuł:
- Influence of Well-Width Fluctuations on the Electronic Structure of GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N Multiquantum Wells with Graded Interfaces
- Autorzy:
-
Valcheva, E.
Dimitrov, S.
Monemar, B.
Haratizadeh, H.
Persson, P.O.A.
Amano, H.
Akasaki, I. - Powiązania:
- https://bibliotekanauki.pl/articles/2047708.pdf
- Data publikacji:
- 2007-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.55.Cr
73.20.-r
73.21.-b
74.40.+k - Opis:
- Experimental and computation results based on chemical composition assessment of metal-organic chemical vapour deposition grown undoped GaN/Al$\text{}_{x}$Ga$\text{}_{1-x}$N multiquantum well structures in the low composition limit of x = 0.07 and wide wells demonstrate composition fluctuations in the barrier layers which lead to large-scale nonuniformities and inequivalence of the different wells. As a consequence the experimental photoluminescence spectra at low temperature show a double peak structure indicative of well-width fluctuations by one lattice parameter (2 monolayers).
- Źródło:
-
Acta Physica Polonica A; 2007, 112, 2; 395-400
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł