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Tytuł:
Quantum Hall Ferromagnet in Magnetically-Doped Quantum Wells
Autorzy:
Andrearczyk, T.
Jaroszyński, J.
Wróbel, J.
Karczewski, G.
Wojtowicz, T.
Papis, E.
Kamińska, E.
Piotrowska, A.
Popović, D.
Dietl, T.
Powiązania:
https://bibliotekanauki.pl/articles/2036881.pdf
Data publikacji:
2003-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.43.Nq
72.25.Dc
73.61.Ga
75.50.Pp
Opis:
The article reviews our recent studies on quantum Hall ferromagnetism in diluted magnetic semiconductors. We carried out magnetoresistance studies on modulation-doped, gated heterostructures of (Cd,Mn)Te/(Cd,Mg)Te:I. We put into evidence the formation of Ising quantum Hall ferromagnet with Curie temperature T$\text{}_{C}$ as high as 2 K. Quantum Hall ferromagnetism is manifested by anomalous magnetoresistance maxima. Moreover, magnitude of these spikes depends dramatically on the history of the sample, shows hysteresis when either magnetic field or gate voltage are swept, stretched-exponential time evolution characteristic of glassy systems, and strong Barkhausen noise. Our study suggests that these metastabilities stem from the slow dynamics of ferromagnetic domains.
Źródło:
Acta Physica Polonica A; 2003, 104, 2; 93-102
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Control of Ferromagnetism in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Based Quantum Wells
Autorzy:
Bertolini, M.
Boukari, H.
Ferrand, D.
Cibert, J.
Tatarenko, S.
Gilles, B.
Maślana, W.
Gaj, J. A.
Kossacki, P.
Dietl, T.
Powiązania:
https://bibliotekanauki.pl/articles/2035587.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.30.Hx
75.50.Dd
75.50.Pp
78.55.Et
Opis:
New structures aiming at controlling the ferromagnetic properties of diluted magnetic semiconductor quantum wells are presented. The carrier density is controlled by applying a voltage across a p-i-n diode. A new method, creating a 2D hole gas by adjusting the distance between the quantum well and surface, offers opportunities for a broader range of structures.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 603-608
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Ferromagnetic p-d Exchange in Diluted Magnetic Semiconductors
Autorzy:
Blinowski, J.
Dietl, T.
Kacman, P.
Powiązania:
https://bibliotekanauki.pl/articles/1921558.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.30.-m
71.70.-d
Opis:
The antiferromagnetic type of the interaction between the Γ$\text{}_{8}$-band electrons and the Mn$\text{}^{2+}$ ions in A$\text{}^{II}$B$\text{}^{IV}$ diluted magnetic semiconductors has been explained by invoking the p-d hybridization mechanism. In this paper it is shown that for particular electronic configurations of the magnetic ions in diluted magnetic semiconductors the p-d hybridization can lead to a ferromagnetic interaction between the valence-band electrons and the localized spins. This happens when all the one-electron d-orbitals which hybridize with p-band states are empty (e.g., as in Sc$\text{}^{2+}$ and Ti$\text{}^{2+}$ ions). The appropriate p-d Hamiltonian is derived and the ferromagnetic exchange constants are evaluated.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 641-644
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ferromagnetism in II-VI Based Semiconductor Structures
Autorzy:
Cibert, J.
Ferrand, D.
Tatarenko, S.
Wasiela, A.
Kossacki, P.
Dietl, T.
Powiązania:
https://bibliotekanauki.pl/articles/2027470.pdf
Data publikacji:
2001-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
75.50.Pp
75.30.Hx
75.50.Dd
Opis:
The experimental results on carrier-induced ferromagnetic interaction in II-VI diluted magnetic semiconductors are shortly reviewed and analyzed in the light of the mean field approximation. We particularly take the point of view of the experimentalist to emphasize (i) points which are easily understood within this simple model (as the role of the detailed structure of the valence band) and hence should be incorporated into more sophisticated models, and (ii) points which are not taken into account in the mean field model (e.g., disorder effects) and hence call for more elaborate descriptions. We particularly discuss the case of a low carrier density, and show that the situation appears as experimentally very different in the highly disordered 3D layers and in the modulation doped 2D quantum wells.
Źródło:
Acta Physica Polonica A; 2001, 100, 2; 227-236
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Wpływ wysiłku fizycznego na zapasy akseroftolu w wątrobie i nerkach szczura
The effect of exercise on the reserves of axerophtol in the liver and kidneys of rats
Autorzy:
Dietl, B.
Opuszynska, T.
Powiązania:
https://bibliotekanauki.pl/articles/874680.pdf
Data publikacji:
1961
Wydawca:
Narodowy Instytut Zdrowia Publicznego. Państwowy Zakład Higieny
Źródło:
Roczniki Państwowego Zakładu Higieny; 1961, 12, 5
0035-7715
Pojawia się w:
Roczniki Państwowego Zakładu Higieny
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Localization in Sb-Doped Si/SiGe Superlattices
Autorzy:
Dietl, T.
Jaroszyński, J.
Sawicki, M.
Głód, P.
Wróbel, J.
Stöger, G.
Brunthaler, G.
Bauer, G.
Schäffler, F.
Powiązania:
https://bibliotekanauki.pl/articles/1933732.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Cw
72.15.Rn
73.20.Fz
Opis:
Millikelvin studies of in-plane magnetoconductance in short period Si/Ge:Sb superlattices have been carried out in order to examine the effect of anisotropy on quantum localization. The field-induced metal-to-insulator transition has been observed, indicating the existence of extended states. This suggests that despite anisotropy as large as D $\text{}_{∥}$/D$\text{}_{⊥}$ ≈ 10$\text{}^{3}$ the system behaves as 3D in respect of localization by disorder.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 699-702
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Formation Time of Magnetic Polarons
Autorzy:
Dietl, T.
Peyla, P.
Grieshaber, W.
Merle d'Aubigné, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1872800.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
78.55.Et
75.50.Rr
Opis:
It is shown that non-scalar spin-spin interactions rather than spin-lattice coupling or spin diffusion control the dynamics of the magnetization formation visible in time-resolved luminescence and SQUID magnetometry.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 361-364
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
From Magnetic Polarons to Ferromagnetism
Autorzy:
Dietl, T.
Powiązania:
https://bibliotekanauki.pl/articles/1968985.pdf
Data publikacji:
1998-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.47.+p
75.70.Cn
78.55.Et
78.66.Hf
Opis:
A brief overview is given on selected effects of the exchange coupling between effective mass electrons and localized spins in II-VI semiconductors containing Mn ions. In the case of a carrier or exciton trapped by an impurity or defect, the exchange interaction leads to zero-field spin-splitting. The current theory of such complexes, known as bound magnetic polarons, describes correctly their spectroscopic and thermodynamic properties as well as their formation dynamics. At the same time, a free magnetic polaron - a delocalized carrier accompanied by a traveling cloud of polarized spins - is not expected to exist for the actual values of the coupling constants. However, hole scattering by thermodynamic and static fluctuations is shown to affect significantly its energy. For a strong coupling, the corresponding renormalization has to be described by a non-perturbative approach. Finally, the influence of the carrier liquid upon the Mn spins is discussed. Here, either optical pumping or p-type doping may lead to a ferromagnetic order, both in bulk and layered structures. Because of a long-range character of the carrier mediated interactions, this ordering is not destroyed by the fluctuations, even in the reduced dimensionality systems.
Źródło:
Acta Physica Polonica A; 1998, 94, 2; 111-123
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Temperature Ferromagnetism and Nano-Scale Phase Separations in Diluted Magnetic Semiconductors and Oxides
Autorzy:
Dietl, T.
Powiązania:
https://bibliotekanauki.pl/articles/2047208.pdf
Data publikacji:
2007-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
Opis:
In this paper the present understanding of the origin of ferromagnetic response that has been detected in a number of diluted magnetic semiconductors and diluted magnetic oxides at room temperature is outlined. It is argued that in these systems, owing to a typically small solubility of magnetic ions, crystallographic or chemical phase separation into regions with a large and a small concentration of magnetic component takes place. The ferromagnetic signatures then come from the regions with a large concentration of magnetic ions, which show non-zero spontaneous magnetization up to the blocking temperature, whose magnitude is proportional to the nanocrystal volume and magnetic anisotropy. Novel methods enabling a control of nano-assembling of magnetic nanocrystals in non-conducting matrices as well as possible functionalities of these spatially modulated magnetic systems are described. We also discuss phase separations into paramagnetic and ferromagnetic regions, which are driven by the Anderson-Mott localization and/or competing ferromagnetic and antiferromagnetic interactions. Finally, the question whether the high temperature ferromagnetism is possible in materials without magnetic ions is addressed.
Źródło:
Acta Physica Polonica A; 2007, 111, 1; 27-46
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Magnetic Impurities upon Universal conductance Fluctuations
Autorzy:
Dietl, T.
Powiązania:
https://bibliotekanauki.pl/articles/1953174.pdf
Data publikacji:
1997-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
72.15.Rn
73.61.Ga
73.20.Fz
Opis:
Mesoscopic phenomena in quantum structures which incorporate magnetic impurities with localized spins may exhibit a number of novel features driven by spin-disorder scattering, exchange spin-splitting of electron bands, and the formation of bound magnetic polarons. After brief information on these effects, their influence on universal conductance fluctuations as well as on low frequency noise and quantum localization is presented. Millikelvin investigations of diffusive charge transport, which have been carried out for submicron wires of n$\text{}^{+}$-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te epilayers, are reviewed in some details. These studies have provided information on the significance of spin-disorder scattering in semiconductors and put into the evidence a new driving mechanism of the magnetoconductance fluctuations - the redistribution of the electrons between energy levels of the system, induced by the giant s-d exchange spin-splitting. Important implications of these findings for previous interpretations of spin effects in semiconductor and metal nanostructures are discussed.
Źródło:
Acta Physica Polonica A; 1997, 91, 1; 161-171
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
s-p-d-f Exchange Interactions in Mn and Eu Based IV-VI Semimagnetic Semiconductors
Autorzy:
Dietl, T.
Bauer, G.
Powiązania:
https://bibliotekanauki.pl/articles/1921647.pdf
Data publikacji:
1992-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.70.Gm
Opis:
We evaluated exchange integrals which describe the spin dependent coupling between effective mass electrons and localized spins in the IV-VI semi-magnetic semiconductors taking into account contributions from the direct Coulomb exchange as well as from the hybridization between band states and magnetic shells. The obtained constants compare favorably with the experimental values for both the Mn- and the Eu-based compounds. We also discuss some peculiarities of IV-VI semimagnetic semiconductors, which may render the virtual-crystal approximation invalid.
Źródło:
Acta Physica Polonica A; 1992, 82, 5; 729-732
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Why Ferromagnetic Semiconductors?
Autorzy:
Dietl, T.
Powiązania:
https://bibliotekanauki.pl/articles/2030392.pdf
Data publikacji:
2001-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
72.25.Dc
75.30.Hx
85.75.-d
Opis:
Rapid development of information technologies originates from the exponential increase in the density of information that can be processed, stored, and transferred by the unit area of relevant devices. There is, however, a growing amount of evidences that the progress achieved in this way approaches its limits. Various novel ideas put forward to circumvent barriers ahead are described. Particular attention is paid to those concepts which propose to exploit electron or nuclear spins as the information carriers. Here, ferromagnetic semiconductors of III-V or II-VI compounds containing a sizable concentration of transition metals appear as outstanding spintronic materials.
Źródło:
Acta Physica Polonica A; 2001, 100, Supplement; 139-151
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Two-Dimensional Electron Gas in LPE-Grown GaInAs-InP Heterostructures
Autorzy:
Fronc, K.
Grabecki, G.
Wróbel, J.
Dietl, T.
Gajewska, M.
Powiązania:
https://bibliotekanauki.pl/articles/1891365.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Df
73.20.Dx
73.60.Br
Opis:
A series of GaInAs/InP heterostructures was grown by liquid phase epitaxy. The heterostructures were characterized by magnetotransport measurements carried out down to 1.8 K and up 10 T. The results demonstrate the existence of the high-mobility two-dimensional electron gas in the narrow-gap GaInAs as well as the presence of residual conductance through the InP buffer layer.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 449-452
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties and Characterization of ALD Grown Dielectric Oxides for MIS Structures
Autorzy:
Gierałtowska, S.
Sztenkiel, D.
Guziewicz, E.
Godlewski, M.
Łuka, G.
Witkowski, B. S.
Wachnicki, Ł.
Łusakowska, E.
Dietl, T.
Sawicki, M.
Powiązania:
https://bibliotekanauki.pl/articles/2048118.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
77.55.-g
77.84.Bw
81.05.Ea
Opis:
We report on an extensive structural and electrical characterization of undergate dielectric oxide insulators Al$\text{}_{2}$O$\text{}_{3}$ and HfO$\text{}_{2}$ grown by atomic layer deposition. We elaborate the atomic layer deposition growth window for these oxides, finding that the 40-100 nm thick layers of both oxides exhibit fine surface flatness and required amorphous structure. These layers constitute a base for further metallic gate evaporation to complete the metal-insulator-semiconductor structure. Our best devices survive energizing up to ≈ 3 MV/cm at 77 K with the leakage current staying below the state-of-the-art level of 1 nA. At these conditions the displaced charge corresponds to a change of the sheet carrier density of 3 × 10$\text{}^{13}$ cm$\text{}^{-2}$, which promises an effective modulation of the micromagnetic properties in diluted ferromagnetic semiconductors.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 692-695
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Conductivity Near the Metal-to-Insulator Transition in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Se:Sc
Autorzy:
Głód, P.
Sawicki, M.
Lenard, A.
Dietl, T.
Plesiewicz, W.
Powiązania:
https://bibliotekanauki.pl/articles/1887158.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.30.+h
71.55.Jv
Opis:
Earlier studies of transition metal impurities in II-VI compounds suggest that Sc acts as a resonant donor. We performed Hall effect and conductivity measurements of CdSe:Sc and Cd$\text{}_{0.95}$Mn$\text{}_{0.05}$Se:Sc. The results, particularly the critical concentration of the metal-to-insulator transition, turned out to be similar to those obtained previously for Cd$\text{}_{1-x}$Mn$\text{}_{x}$Se doped with hydrogenic-like impurities, such as In and Ga. Therefore, if the ground state of Sc impurity is indeed located above the bottom of the conduction band, our data demonstrate that the metal-to-insulator transition is primarily driven by the scattering, i.e. it corresponds to the Anderson localization.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 389-392
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 36

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