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    Wyświetlanie 1-4 z 4
    Tytuł:
    Structural Properties and Temperature Behaviour οf Optical Absorption Edge in Polycrystalline ZnO:X (Cu,Ag) Films
    Autorzy:
    Kulyk, B.
    Figà, V.
    Kapustianyk, V.
    Panasyuk, M.
    Serkiz, R.
    Demchenko, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400391.pdf
    Data publikacji:
    2013-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Ps
    78.40.Fy
    68.55.ag
    Opis:
    Silver- and copper-doped ZnO films were prepared by radio-frequency magnetron sputtering on glass substrates. The influence of dopants content on the structural, morphological properties as well as on evolution of the optical absorption edge was considered. It has been found that Ag- and Cu-doped ZnO films are characterized by wurtzite crystalline structure with the preferred direction of crystalline orientation (002). The sizes of grains within the films were found to be dependent on the type of dopant. The temperature evolution of the optical absorption edge is described by the modified Urbach rule that reflects polycrystalline nature of the material. The corresponding parameters concerning electron- (exciton-) phonon interaction, phonon energies and temperature changes of the band-gap were determined and analysed.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 1; 92-97
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Specific Features of Content Dependences for Energy Gap in $In_{x}Tl_{1-x}I$ Solid State Crystalline Alloys
    Autorzy:
    Kashuba, A.
    Piasecki, M.
    Bovgyra, O.
    Stadnyk, V.
    Demchenko, P.
    Fedorchuk, A.
    Franiv, A.
    Andriyevsky, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398249.pdf
    Data publikacji:
    2018-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.Nr
    71.20.-b
    42.70.Gi
    71.35.-y
    Opis:
    A series of $In_{x}Tl_{1-x}I$ (x=0.4-0.9) single crystalline solid state alloys were successfully synthesized by the vertical Bridgman method. For the first time the density functional theory based band structure calculations are performed and features of the band energy dispersion are discussed. Comparison with the experimental energy gap $E_{g}$ obtained from the optical photoconductivity is discussed. An essential role of the localized defects and excitons in formation of the edge photoconductivity is analyzed. Relation between the crystal structure and photoconductivity of the materials studied is discussed. Also the origin of the principal valence and conduction bands is explored. Experimental measurements of the band gap $E_{g}$ by the optical and photoconductivity methods have given opposite dependences with respect to the indium content x. Features of the photoconductivity spectra for different crystallographic directions have been discussed with taking into account the chemical bonds anisotropy.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 1; 68-75
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Resonant Photoemission Spectroscopy Study on the Contribution of the Yb 4f States to the Electronic Structure of ZnO
    Autorzy:
    Demchenko, I.
    Melikhov, Y.
    Konstantynov, P.
    Ratajczak, R.
    Barcz, A.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030972.pdf
    Data publikacji:
    2018-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.hf
    74.25.Jb
    33.60.+q
    Opis:
    The electronic structure of Yb implanted ZnO has been studied by the resonant photoemission spectroscopy. The contribution of the Yb 4f partial density of states is predominant at binding energy about 7.5 and ≈11.7 eV below the VB maximum. At photon energy about 182 eV the multiplet structure around 11.7 eV shows the strongest resonance that corresponds to the ¹I multiplet which is almost exclusively responsible for this resonance, while ³H and ³F states are responsible for the resonance around 7.5 eV. It was also found that the Yb 4f partial density of states distribution shows some similarity to Yb₂O₃.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 4; 907-909
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    (Eu,Gd)Te - MBE Growth and Characterization
    Autorzy:
    Dziawa, P.
    Taliashvili, B.
    Domuchowski, W.
    Łusakowska, E.
    Arciszewska, M.
    Demchenko, I.
    Dobrowolski, W.
    Dybko, K.
    Fedorych, O. M.
    Nadolny, A. J.
    Osinniy, V.
    Petrouchyk, A.
    Story, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038228.pdf
    Data publikacji:
    2004-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    81.15.Hi
    Opis:
    Monocrystalline thin layers of (Eu,Gd)Te, n-type ferromagnetic semiconductor, were grown by molecular beam epitaxy technique on BaF$\text{}_{2}$ (111) substrates. Reflection high-energy electron diffraction, X-ray diffraction, and atomic force microscopy characterization proved epitaxial mode of growth and high crystal quality of the layers. Magnetic susceptibility and magnetic resonance measurements showed that in (Eu,Gd)Te layers ferromagnetic transition takes place at about 13 K. Electrical characterization carried out by the Hall effect and resistivity measurements revealed very high electron concentration of 10$\text{}^{20}$~cm$\text{}^{-3}$ and sharp maximum of resistivity at transition temperature.
    Źródło:
    Acta Physica Polonica A; 2004, 106, 2; 215-221
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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