Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "Dawood, Mohammed O." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Investigation on the structural, optical and topographical behavior of Cadmium oxide polycrystalline thin films using electrochemical depositing method at different times
Autorzy:
Abd, Ahmed N.
Dawood, Mohammed O.
Hassoni, Majid H.
Hussein, Ali A.
Powiązania:
https://bibliotekanauki.pl/articles/1192094.pdf
Data publikacji:
2016
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
Cadmium oxide
thin film
optical characteristics of film
electrochemical depositing method
Opis:
The optical and structure properties of Cadmium oxide (CdO) thin film prepared by electrochemical deposition method at different times (15, 30 and 60) min were investigated in this paper. Results of optical Transmission, absorption, reflection spectra, optical conductance, refractive index, extension coefficient, real and imaginary dielectric constants studies are reported. The optical transmittance of the CdO thin film which formed at room temperature was 20% at wavelength ≈350 nm then increases to 60% at wavelength ≈1100 nm for thin film of CdO. The band-gap was also calculated from the equation relating absorption coefficient with the wavelength. The energy band gap changes from 2.3eV (Bulk CdO) to 2.45eV (CdO thin film). The plotted graphs show the optical characteristics of the film which varied with the wavelength and the photon energy. The optical conductance and band-gap indicated that the film is transmitting within the visible range. The dielectric constant and optical conductance of the film initially decreases slowly with increase in photon energy. The extinction coefficient and refractive index of the films also evaluated, which affected with the change in transmittance. The structure of synthesised CdO thin film was analyzed by X-ray diffraction XRD which revealed that the CdO thin film are polycrystalline and have several peaks of cubic face structure. The crystallite size, dislocation density, microstrain and number of dislocations of the thin film were calculated and listed.
Źródło:
World Scientific News; 2016, 37; 249-264
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Theoretical model to determine the Porosity and refractive index of porous silicon type-n by using Atomic force microscope
Autorzy:
Abdulridha, Wasna'a M.
Abd, Ahmed N.
Dawood, Mohammed O.
Powiązania:
https://bibliotekanauki.pl/articles/1193012.pdf
Data publikacji:
2016
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
Atomic Force Microscope
Porous silicon
n-PS
porosity
refractive index
thickness
Opis:
Porous silicon (PS) layer was produced by photochemical etching process at (5, 7, 10, 12 and 15) etching time and 7 mA/cm2 current density then after investigation by Atomic Force Microscope (AFM) the thickness of PS layer from about 3.4 µm to 15.8 µm was determined. The surface of porous silicon is formed from small pyramids with porous structure, where the porosity of n-PS is from ≈ (32-72%). Porous silicon layer formed on the silicon substrates by photochemical etching contains also the nanopores with diameter about (16.41-42) nm in current density (7mA/cm2). The porosity and thickness was determined from AFM results and compared with the result from the usually measured porosity and thickness through a gravimetric method we found that the values of porosity and thickness calculated from two methods are approximately similar to each other with few difference, the influence of structure changes on optical properties such as refractive index, which decreases exponentially with porosity.
Źródło:
World Scientific News; 2016, 28; 29-40
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies