- Tytuł:
- III-Nitride Nanostructures for Infrared Optoelectronics
- Autorzy:
-
Monroy, E.
Guillot, F.
Leconte, S.
Bellet-Amalric, E.
Nevou, L.
Doyennette, L.
Tchernycheva, M.
Julien, F. H.
Baumann, E.
Giorgetta, F.
Hofstetter, D.
Dang, Le Si - Powiązania:
- https://bibliotekanauki.pl/articles/2046980.pdf
- Data publikacji:
- 2006-09
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.21.Fg
78.67.De
85.60.Gz
85.35.Be
81.15.Hi
81.07.St - Opis:
- Thanks to their large conduction band offset (~1.8 eV for the GaN/AlN system) and subpicosecond intersubband scattering rates, III-nitride heterostructures in the form of quantum wells or quantum dots are excellent candidates for high-speed unipolar devices operating at optical-fiber telecommunication wavelengths, and relying on the quantum confinement of electrons. In this work, we present the plasma-assisted molecular-beam epitaxial growth of quantum well infrared photodetector structures. The growth of Si-doped GaN/AlN multiple quantum well structures is optimized by controlling substrate temperature, metal excess and growth interruptions. Structural characterization confirms a reduction of the interface roughness to the monolayer scale. P-polarized intersubband absorption peaks covering the 1.33-1.91μm wavelength range are measured on samples with quantum well thickness varying from 1 to 2.5 nm. Complete intersubband photodetectors have been grown on conductive AlGaN claddings, the Al mole fraction of the cladding matching the average Al content of the active region. Photovoltage measurements reveal a narrow (~90 meV) detection peak at 1.39μm at room temperature.
- Źródło:
-
Acta Physica Polonica A; 2006, 110, 3; 295-301
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł