- Tytuł:
- Porous Silicon Formation by Metal-Assisted Chemical Etching
- Autorzy:
-
Lipinski, M.
Cichoszewski, J.
Socha, R.
Piotrowski, T. - Powiązania:
- https://bibliotekanauki.pl/articles/1807542.pdf
- Data publikacji:
- 2009-12
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.16.Rf
81.05.Rm
78.55.Mb
61.43.Gt
78.67.Bf - Opis:
- The method of metal-assisted chemical etching produces a porous silicon layer. Palladium particles are deposited on both: multi-crystalline and Czochralski grown mono-crystalline Si wafers by immersing them in $PdCl_{2}$ solution for 1 to 3 min. X-ray photoelectron spectroscopy analysis of Pd clusters shows a decrease in Pd metal fraction by prolonged immersion time t from $F_{Pd}$ = 71.2% for t = 1 min to $F_{Pd}$ = 61.4% for t = 3 min due to Pd oxidation process. Porous silicon forms by metal-assisted chemical etching in a HF:$H_{2}O_{2}$ solution for 1 to 3 min. Photoluminescence of metal-assisted chemical etched samples exhibits the peak with a maximum of t at λ=650 nm independent of the etching time. Simultaneously, the intensity of the photoluminescence spectra strongly decreases for extended etching time t = 3 min. This behavior is attributed to increasing layer macroporosity, which strongly reduces amount of light emitting nanocrystallites.
- Źródło:
-
Acta Physica Polonica A; 2009, 116, S; S-117-S-119
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł