Autor: Chung, T.-J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Preparation Of Fine Grained SiC At Reduced Temperature By Two-Step Sintering
Wytwarzanie drobnoziarnistego SiC w obniżonej temperaturze przez dwuetapowe spiekanie
Autorzy:: Kim, K.-W.
Oh, K.-S.
Lee, H.
Kim, B. S.
Chung, T.-J.
Powiązania:: https://bibliotekanauki.pl/articles/353772.pdf
Data publikacji:: 2015
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: SiC
liquid phase
two step sintering
coarsening
hardness
faza ciekła
spiekanie dwuetapowe
odporność
twardość
Opis:: Two-step sintering route was applied for the densification SiC by promoting the role of liquid phase. The specimen contained 8 vol% of liquid phase composed of Al₂O₃ and Y₂O₃. The heating schedule consisted with initial rapid heating to 2000°C and immediate quenching to 1700 or 1750°C. By heating at elevated temperature, even distribution of the liquid phase was intended. The heat treatment at reduced temperature was to suppress the evaporative loss of the liquid and to secure the time for densification. The two-step sintering effectively suppressed loss of mass and coarsening. The resultant SiC was thus dense and was composed of fine grains exhibiting hardness of 2321 kgf/mm².
Źródło:: Archives of Metallurgy and Materials; 2015, 60, 2B; 1539-1542
1733-3490
Pojawia się w:: Archives of Metallurgy and Materials
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Joining Of Green Body And Dense Substrate For Indium Tin Oxide Under Uniaxial Pressure In An Open Condition
Łączenie zielonej masy i gęstego podłoża z tlenku cyny indu w warunkach jednoosiowego ściskania w stanie otwartym
Autorzy:: Moon, G.-S.
Chung, T.-J.
Yang, S. H.
Hong, G.-S.
Oh, K.-S.
Powiązania:: https://bibliotekanauki.pl/articles/355654.pdf
Data publikacji:: 2015
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: transparent conducting oxide
indium tin oxide
green body
joining
tlenek indu
zielona masa
łączenie
Opis:: The green body and dense substrate of indium tin oxide was joined by uniaxially pressing at 0.3 MPa at 1300°C to test the restoring of the eroded part of transparent conducting oxide target. The green body was sintered to 98% of theoretical density under the suppression of shrinkage along the boundary below 5%. The boundary between two parts was free of pore but could be recognized from the difference in grain sizes. The joined part had the virtually same density with the substrate, but the grain size was less than one fifth compared with that of substrate.
Źródło:: Archives of Metallurgy and Materials; 2015, 60, 2B; 1209-1212
1733-3490
Pojawia się w:: Archives of Metallurgy and Materials
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Thidiazuron enhanced somatic embryogenes is fromcallus lines of Arabica Coffee and subsequent plant regeneration
Autorzy:: Wang, Y.-C.
Lin, M.-Z.
Huang, B.
Chung, H.-H.
Chen, J.-T.
Powiązania:: https://bibliotekanauki.pl/articles/19649.pdf
Data publikacji:: 2018
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Źródło:: Acta Biologica Cracoviensia. Series Botanica; 2018, 60, 2
0001-5296
Pojawia się w:: Acta Biologica Cracoviensia. Series Botanica
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Charge-pumping characterization of SOI devices fabricated by means of wafer bonding over pre-patterned cavities
Autorzy:: Głuszko, G.
Łukasiak, L.
Kilchytska, V.
Chung, T. M.
Olbrechts, B.
Flandrie, D.
Raskin, J. P.
Powiązania:: https://bibliotekanauki.pl/articles/308669.pdf
Data publikacji:: 2007
Wydawca:: Instytut Łączności - Państwowy Instytut Badawczy
Tematy:: charge-pumping
electrical characterization
interface traps
SOI
water bonding
Si layer transfer
Opis:: The quality of the silicon-buried oxide bonded interface of SOI devices created by thin Si film transfer and bonding over pre-patterned cavities, aiming at fabrication of DG and SON MOSFETs, is studied by means of chargepumping (CP) measurements. It is demonstrated that thanks to the chemical activation step, the quality of the bonded interface is remarkably good. Good agreement between values of front-interface threshold voltage determined from CP and I-V measurements is obtained.
Źródło:: Journal of Telecommunications and Information Technology; 2007, 3; 61-66
1509-4553
1899-8852
Pojawia się w:: Journal of Telecommunications and Information Technology
Dostawca treści:: Biblioteka Nauki

Artykuł

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