Autor: Chou, W. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Carrier Dynamics and Dynamic Band-Bending in Type-II ZnTe/ZnSe Quantum Dots
Autorzy:: Syperek, M.
Misiewicz, J.
Chan, C.
Dumcenco, D.
Huang, Y.
Chou, W.
Powiązania:: https://bibliotekanauki.pl/articles/1399095.pdf
Data publikacji:: 2013-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.67.Hc
78.55.Et
78.47.J-
Opis:: Carrier dynamics and dynamic band-bending in self-assembled ZnTe/ZnSe quantum dots have been studied by means of time-resolved photoluminescence experiment at low temperatures. The experiment reveals clearly type-II character of the confinement potential in the dot manifested in: (i) long photoluminescence decay time constant of 28-35 ns, and (ii) temporal shift of the quantum dot peak emission towards low energy following the laser pulse excitation. The magnitude of the spectral shift Δ E depends on the dot size and the power density of excitation pulse. For the dots under study and given experimental conditions Δ E ≈ 28 ÷ 42 meV.
Źródło:: Acta Physica Polonica A; 2013, 124, 5; 821-823
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Defect Study on Deformed Fe-Si Alloys by Positron Annihilation Techniques
Autorzy:: Chou, K. W.
De Baerdemaeker, J.
Peral, V.
Ruiz, D.
Houbaert, Y.
Segers, D.
Powiązania:: https://bibliotekanauki.pl/articles/2043321.pdf
Data publikacji:: 2005-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.60.+z
78.70.Bj
Opis:: A set of Fe-Si samples with different Si content, varying from 0 to 7.6 wt.%, was investigated using positron annihilation spectroscopy. Different deformations were performed on these samples and the lineshape parameters of the annihilation line were measured in order to investigate the defects in the alloys. An exponential decay of the S-parameter in function of the time can be observed after deformation of the samples. The decay constant increases with increasing Si content. During the measurements of the samples with increasing Si content, the initiation of DO$\text{}_{3}$ structure can be seen above 5 wt.% of Si, as well as the decoration by impurities.
Źródło:: Acta Physica Polonica A; 2005, 107, 5; 799-804
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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