- Tytuł:
- Observation of Thermally-Activated Electron Traps in GaAs/AlAs/GaAs Heterostructures in Low-Frequency Noise Measurements
- Autorzy:
-
Przybytek, J.
Stankiewicz, R.
Gryglas-Borysiewicz, M.
Baj, M.
Cavanna, A.
Faini, G. - Powiązania:
- https://bibliotekanauki.pl/articles/2048142.pdf
- Data publikacji:
- 2011-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.50.Td
73.40.Gk - Opis:
- During our investigations of tunneling process in thin 7 nm thick GaAs/AlAs/GaAs vertical single-barrier tunneling structure with Si δ-doping inside the barrier we have observed fluctuations of the tunneling current which exhibited large Lorentzian noise with intensity depending on biasing voltage. We have shown that Lorentzian noise originates from multilevel random telegraph noise of the small number of fluctuators which influence the tunneling process. Time-domain analysis of the current noise measured for temperatures between 4.2 K and 50 K enabled to determine the thermal activation energies of these fluctuators lying between 0.8 and 3 meV.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 5; 723-725
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł