Autor: Buyskikh, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Generation of Terahertz Radiation by Large-Aperture Photoconductive Antennas in Condition of a High Level Excitation
Autorzy:: Trukhin, V.
Buyskikh, A.
Powiązania:: https://bibliotekanauki.pl/articles/1505694.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.30.+q
41.60.-m
72.20.Jv
Opis:: Theoretical and experimental results about generation coherent terahertz (THz) radiation in photoconductive medium in condition of a high level excitation are presented. Employing self-consistent analytical approach to the set of non-equilibrium Boltzmann equation for charge carriers and Maxwell equations for electromagnetic radiation we have studied the radiation phenomena in non-equilibrium e-h plasma excited in the photoconductive gap of terahertz radiating large-aperture photoconductive antenna by an ultrashort laser pulse. Equally with the effect of the radiation screening, the effect of the non-linear absorption of an optical pump pulse (bleaching of photoconductive medium) was taken into account. It was shown that the effect of nonlinear absorption reconstructs the dynamics of the generation of terahertz radiation and must take into account the effects associated with the spread of the generated wave and the wave of excitation.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 206-209
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: The Time Dynamics Research of Coherent State in Semiconductors by Excitation of Femtoseconds Pulses
Autorzy:: Trukhin, V.
Buyskikh, A.
Powiązania:: https://bibliotekanauki.pl/articles/1506278.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 06.60.Jn
78.47.jh
82.53.Kp
78.45.+h
Opis:: In this article we present results of research of coherent processes of the ultrashort pulse light reemission in semiconductors. The time dynamics of the amplitude and the phase of the probe light wave reflected from the surface of low temperature GaAs was researched by the pump-probe method. The photodetector sensed the interference figure which shows interaction between probe pulse and pump pulse and also between probe pulse and excited by the pump coherent states in the semiconductor. The pulses wavelength is 800 nm and the pulses width is 15 fs. Thus the energy of excited photoelectrons was higher than conduction-band bottom by 60 to 140 meV. Due to the short duration of the pulse we could observe the coherent scattering of ultrashort light pulses at the room temperature. The impulse relaxation time for photoelectrons was determined by the experiments and it was 40 fs.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 265-267
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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