Autor: Boubanga, S. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Mechanism of Radiation Coupling to Plasma Wave Field Effect Transistor Sub-THz Detectors
Autorzy:: Sakowicz, M.
Łusakowski, J.
Karpierz, K.
Grynberg, M.
Gwarek, W.
Knap, W.
Boubanga, S.
Powiązania:: https://bibliotekanauki.pl/articles/1811983.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 84.40.Ba
52.40.Fd
85.30.Tv
07.57.Kp
Opis:: Detection of 100 GHz and 285 GHz electromagnetic radiation by GaAs/AlGaAs field effect transistors with the gate length of 150 nm was investigated at 300 K as a function of the angleαbetween the direction of linear polarization of the radiation and the symmetry axis of the field effect transistors. The angular dependence of the detected signal was found to be Acos²(α-α₀)+C. A response of the transistor chip (including bonding wires and the substrate) to the radiation was numerically simulated. Calculations confirmed experimentally observed dependences and allowed to investigate the role of bonding wires and contact pads in coupling of the radiation to the transistor channel.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1337-1342
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Terahertz Resonant Detection by Plasma Waves in Nanometric Transistors
Autorzy:: Teppe, F.
El Fatimy, A.
Boubanga, S.
Knap, W.
Seliuta, D.
Valusis, G.
Chenaud, B.
Powiązania:: https://bibliotekanauki.pl/articles/1813191.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.20.Nr
71.45.Lr
72.30.+q
Opis:: The plasma waves in gated two-dimensional electron gas have a linear dispersion law, similar to the sound waves. The transistor channel is acting as a resonator cavity for the plasma waves, which can reach frequencies in the THz range for a sufficiently short gate length field effect transistors. A variety of possible applications of field effect transistor operating as a THz device were suggested. In particular, it was shown that the nonlinear properties of plasma oscillations can be utilized for THz tunable detectors. During the last few years THz detection related to plasma wave instabilities in nanometer size field effect transistors was demonstrated experimentally. In this work we review our recent experimental results on the resonant plasma wave detection at cryogenic and room temperatures.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 815-820
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: High Magnetic Field Effects on Plasma Wave THz Detection in Field-Effect Transistors
Autorzy:: Boubanga-Tombet, S.
Nogajewski, K.
Teppe, F.
Knap, W.
Karpierz, K.
Łusakowski, J.
Grynberg, M.
Dyakonov, M.
Powiązania:: https://bibliotekanauki.pl/articles/1791357.pdf
Data publikacji:: 2009-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.57.Kp
84.40.x
85.30.Tv
85.35.p
73.20.Mf
Opis:: Experiments on terahertz radiation detection with InGaAs/InAlAs field-effect transistor in quantizing magnetic field are reported. We observed oscillations of the photovoltaic signal analogous to the Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance conditions. The results are described quantitatively within the frame of a theory which takes into account a new source of nonlinearity related to the Landau quantization of the conduction band.
Źródło:: Acta Physica Polonica A; 2009, 116, 5; 939-940
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: THz Double-Grating Gate Transistor Detectors in High Magnetic Fields
Autorzy:: But, D.
Dyakonova, N.
Coquillat, D.
Teppe, F.
Knap, W.
Watanabe, T.
Tanimoto, Y.
Boubanga Tombet, S.
Otsuji, T.
Powiązania:: https://bibliotekanauki.pl/articles/1409591.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.57.Kp
85.30.Tv
73.43.Qt
Opis:: Double-grating-gate field-effect transistors have a great potential as terahertz detectors. This is because the double grating gate serves not only for carrier density tuning but also as an efficient THz radiation coupler. In this paper, we present characterization of these transistors using high magnetic fields. Low and high magnetic field data are used to determine the electron mobility and electron concentration, respectively, in different parts of the transistor channel.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 1080-1082
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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