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Wyszukujesz frazę "Beck, R.M.D." wg kryterium: Autor


Wyświetlanie 1-4 z 4
Tytuł:
A peculiar faunivorous metatherian from the early Eocene of Australia
Autorzy:
Beck, R.M.D.
Powiązania:
https://bibliotekanauki.pl/articles/945605.pdf
Data publikacji:
2015
Wydawca:
Polska Akademia Nauk. Instytut Paleobiologii PAN
Tematy:
Mammalia
Metatheria
Marsupialia
Sparassodonta
Archaeonothos henkgodthelpi
new species
Eocene
fossil
deposit
paleontology
Australia
Opis:
I describe Archaeonothos henkgodthelpi gen. et. sp. nov., a small (estimated body mass ~40–80 g) tribosphenic metatherian from the early Eocene Tingamarra Fauna of southeastern Queensland, Australia. This taxon, known only from a single isolated upper molar (M2 or M3) is characterised by a very distinctive combination of dental features that, collectively, probably represent faunivorous adaptations. These include: a straight, elevated centrocrista; a metacone considerably taller than the paracone; a wide stylar shelf (~50% of the total labiolingual width of the tooth); reduced stylar cusps; a long postmetacrista; a small and anteroposteriorly narrow protocone; an unbasined trigon; and the absence of conules. Some of these features are seen in dasyuromorphians, but detailed comparisons reveal key differences between A. henkgodthelpi and all known members of this clade. A. henkgodthelpi also predates recent molecular estimates for the divergence of crown-group Dasyuromorphia. Similar dental features are seen in a number of other metatherians, including the South American sparassodonts, Wirunodon chanku from the ?middle–late Eocene Santa Rosa local fauna of Peru, and Kasserinotherium tunisiense from the early Eocene Chambi fauna of Tunisia, although whether A. henkgodthelpi is closely related to any of these taxa is unclear based on available evidence. I therefore refer A. henkgodthelpi to Metatheria incertae sedis. Potential relatives of A. henkgodthelpi are unknown from any other Australian fossil deposit.
Źródło:
Acta Palaeontologica Polonica; 2015, 60, 1; 123-129
0567-7920
Pojawia się w:
Acta Palaeontologica Polonica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of composition of ultra-thin silicon oxynitride layers fabricated by PECVD and ultrashallow rf plasma ion implantation
Autorzy:
Mroczyński, R.
Bieniek, T.
Beck, R. B.
Ćwil, M.
Konarski, P.
Hoffman, P.
Schmeißer, D.
Powiązania:
https://bibliotekanauki.pl/articles/308687.pdf
Data publikacji:
2007
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
ultra-thin dielectrics
oxynitride
SIMS
XPS
PECVD
Opis:
In this paper differences in chemical composition of ultra-thin silicon oxynitride layers fabricated in planar rf plasma reactor are studied. The ultra-thin dielectric layers were obtained in the same reactor by two different methods: ultrashallow nitrogen implantation followed by plasma oxidation and plasma enhanced chemical vapour deposition (PECVD). Chemical composition of silicon oxynitride layers was investigated by means of X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The spectroscopic ellipsometry was used to determine both the thickness and refractive index of the obtained layers. The XPS measurements show considerable differences between the composition of the fabricated layers using each of the above mentioned methods. The SIMS analysis confirms XPS results and indicates differences in nitrogen distribution.
Źródło:
Journal of Telecommunications and Information Technology; 2007, 3; 20-24
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The influence of annealing (900?C) of ultra-thin PECVD silicon oxynitride layers
Autorzy:
Mroczyński, R.
Głuszko, G.
Beck, R. B.
Jakubowski, A.
Ćwil, M.
Konarski, P.
Hoffman, P.
Schmeißer, D.
Powiązania:
https://bibliotekanauki.pl/articles/308691.pdf
Data publikacji:
2007
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
ultra-thin dielectrics
silicon oxynitride
PECVD
CMOS
Opis:
This work reports on changes in the properties of ultra-thin PECVD silicon oxynitride layers after high- temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic ellipsometry, XPS, SIMS and electrical characterization methods (C-V, I-V and charge- pumping). The XPS measurements show that SiOxNy is the dominant phase in the ultra-thin layer and high-temperature annealing results in further increase of the oxynitride phase up to 70% of the whole layer. Despite comparable thickness, SIMS measurement indicates a densification of the annealed layer, because sputtering time is increased. It suggests complex changes of physical and chemical properties of the investigated layers taking place during high-temperature annealing. The C-V curves of annealed layers exhibit less frequency dispersion, their leakage and charge-pumping currents are lower when compared to those of as-deposited layers, proving improvement in the gate structure trapping properties due to the annealing process.
Źródło:
Journal of Telecommunications and Information Technology; 2007, 3; 16-19
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes
Autorzy:
Bieniek, T.
Beck, R. B.
Jakubowski, A.
Konarski, P.
Ćwil, M.
Hoffman, P.
Schmeißer, D.
Powiązania:
https://bibliotekanauki.pl/articles/308689.pdf
Data publikacji:
2007
Wydawca:
Instytut Łączności - Państwowy Instytut Badawczy
Tematy:
CMOS
gate stack
oxynitride
plasma implantation
Opis:
Experiments presented in this work are a summary of the study that examines the possibility of fabrication of oxynitride layers for Si structures by nitrogen implantation from rf plasma only or nitrogen implantation from rf plasma followed immediately by plasma oxidation process. The obtained layers were characterized by means of: ellipsometry, XPS and ULE-SIMS. The results of electrical characterization of NMOS Al-gate test structures fabricated with the investigated layers used as gate dielectric, are also discussed.
Źródło:
Journal of Telecommunications and Information Technology; 2007, 3; 9-15
1509-4553
1899-8852
Pojawia się w:
Journal of Telecommunications and Information Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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