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    Wyświetlanie 1-19 z 19
    Tytuł:
    Modelowanie ruchu psa wchodzącego po schodach
    Modelling of dog’s motion going up the stairs
    Autorzy:
    Beck, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/99205.pdf
    Data publikacji:
    2009
    Wydawca:
    Politechnika Śląska. Katedra Biomechatroniki
    Tematy:
    pies
    model matematyczny
    analiza ruchu
    schody
    dog
    mathematical model
    motion analysis
    stairs
    Opis:
    Celem pracy było opracowanie modelu matematycznego ruchu psa wchodzącego po schodach. W obliczeniach numerycznych wykorzystano przebiegi kinematyczne ruchu psa uzyskane w systemie APAS. Na potrzebę pracy opracowano program komputerowy w środowisku MATLAB.
    The aim of this work was to process a mathematical model of motion the dog witch entering on stairs. In the numerical calculations used kinematics curse of motion the dog obtained in the APASA. On the need to work developed on a Computer program in MATLAB environinent.
    Źródło:
    Aktualne Problemy Biomechaniki; 2009, 3; 7-12
    1898-763X
    Pojawia się w:
    Aktualne Problemy Biomechaniki
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Projekt urządzenia do interaktywnej rehabilitacji dzieci z wadami kończyn górnych
    Project of device for interactive rehabilitation of children with defects of upper limbs
    Autorzy:
    Tejszerska, D
    Beck, M
    Gzik, M
    Powiązania:
    https://bibliotekanauki.pl/articles/98995.pdf
    Data publikacji:
    2010
    Wydawca:
    Politechnika Śląska. Katedra Biomechatroniki
    Tematy:
    rehabilitacja
    kończyna górna
    urządzenie interaktywne
    rehabilitation
    upper limb
    interactive device
    Opis:
    Praca przedstawia projekt urządzenia do interaktywnej rehabilitacji dzieci z wadami kończyn górnych. Urządzenie składa się z rękawa, dwóch czujników oraz przekaźnika. W pracy zestawiono trzy propozycje rękawa oraz materiałów, które pozwoliły na wybranie optymalnego rozwiązania.
    This work shows project of device for interactive rehabilitation of children with defects of upper limbs. The device consists of a sleeve, two sensors and relays. The work compares the three proposals, and sleeve materials, which allowed us to select the optimal solution.
    Źródło:
    Aktualne Problemy Biomechaniki; 2010, 4; 207-212
    1898-763X
    Pojawia się w:
    Aktualne Problemy Biomechaniki
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The analysis of the level and trends of potential years of life lost due to diabetes in Poland in the years 2002-2013
    Autorzy:
    Papaj, D.
    Papaj, E.
    Beck, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1918835.pdf
    Data publikacji:
    2019
    Wydawca:
    Uniwersytet Medyczny w Białymstoku
    Tematy:
    Diabetes
    potential years of life lost
    PYLL
    trends
    Opis:
    Introduction: The industrial and socio-economic development is the direct cause of changes in major health threats in highly developed societies. Diabetes is a civilization disease and it depends on the impaired action of insulin. Together with its complications, it is a significant cause of deaths all over the world. Purpose: To assess the level and trends of potential years of life lost (PYLL) due to diabetes in Poland in the years 2002-2013. For specific purposes, it is necessary to assess the PYLL level and the dynamics of PYLL rates due to diabetes and comparison with all causes of death. Materials and Methods: The research material consists of data from generally available databases from the Polish Statistical Office. Potentially lost years of life were calculated using the method proposed by J-M Romeder. Premature deaths have been defined as deaths occurring before the age of 70. Trends in PYLL coefficients were generated by the computer program Joinpoint Regression Programme. Results: The results of the conducted analysis unambiguously indicate the increase in the PYLL ratio due to diabetes was observed in both the general population and the male population. The higher rate of PYLL growth and its much higher level in the male population, compared to the female population, point out to the fact that men die much younger because of diabetes. The dynamics of the PYLL coefficient trends connected with all causes of death indicate the reduction of premature mortality.
    Źródło:
    Progress in Health Sciences; 2019, 1; 51-59
    2083-1617
    Pojawia się w:
    Progress in Health Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A peculiar faunivorous metatherian from the early Eocene of Australia
    Autorzy:
    Beck, R.M.D.
    Powiązania:
    https://bibliotekanauki.pl/articles/945605.pdf
    Data publikacji:
    2015
    Wydawca:
    Polska Akademia Nauk. Instytut Paleobiologii PAN
    Tematy:
    Mammalia
    Metatheria
    Marsupialia
    Sparassodonta
    Archaeonothos henkgodthelpi
    new species
    Eocene
    fossil
    deposit
    paleontology
    Australia
    Opis:
    I describe Archaeonothos henkgodthelpi gen. et. sp. nov., a small (estimated body mass ~40–80 g) tribosphenic metatherian from the early Eocene Tingamarra Fauna of southeastern Queensland, Australia. This taxon, known only from a single isolated upper molar (M2 or M3) is characterised by a very distinctive combination of dental features that, collectively, probably represent faunivorous adaptations. These include: a straight, elevated centrocrista; a metacone considerably taller than the paracone; a wide stylar shelf (~50% of the total labiolingual width of the tooth); reduced stylar cusps; a long postmetacrista; a small and anteroposteriorly narrow protocone; an unbasined trigon; and the absence of conules. Some of these features are seen in dasyuromorphians, but detailed comparisons reveal key differences between A. henkgodthelpi and all known members of this clade. A. henkgodthelpi also predates recent molecular estimates for the divergence of crown-group Dasyuromorphia. Similar dental features are seen in a number of other metatherians, including the South American sparassodonts, Wirunodon chanku from the ?middle–late Eocene Santa Rosa local fauna of Peru, and Kasserinotherium tunisiense from the early Eocene Chambi fauna of Tunisia, although whether A. henkgodthelpi is closely related to any of these taxa is unclear based on available evidence. I therefore refer A. henkgodthelpi to Metatheria incertae sedis. Potential relatives of A. henkgodthelpi are unknown from any other Australian fossil deposit.
    Źródło:
    Acta Palaeontologica Polonica; 2015, 60, 1; 123-129
    0567-7920
    Pojawia się w:
    Acta Palaeontologica Polonica
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Quantum States and Number-Phase Uncertainty Relations Measured by Optical Homodyne Tomography
    Autorzy:
    Raymer, M. G.
    Smithey, D. T.
    Beck, M.
    Cooper, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931411.pdf
    Data publikacji:
    1994-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    03.65.Bz
    42.50.Wm
    Opis:
    Experiments have been performed to determine the Wigner distribution and the density matrix (and for pure states the wave function) of a light mode, by using tomographic inversion of a set of measured probability distributions for quadrature amplitudes. From these measurements the quantum distributions of optical phase and photon number have been obtained. The measurements of quadrature-amplitude distributions for a temporal mode of the electromagnetic field are carried out using balanced homodyne detection. We refer to this new method as optical homodyne tomography. Given the measured density matrix, one can experimentally infer any of the various quantum distributions of optical phase, in particular the Pegg-Barnett (or, equivalently, Shapiro-Shepard) phase distribution, the marginal Wigner distribution, and the Vogel-Schleich operational phase distribution. We have used this approach to make measurements of the number-phase uncertainty relation for coherent-state fields. The coherent states do not attain the minimum value for the number-phase uncertainty product, as set by the expectation value of the commutator of the number and phase operators; this is true theoretically and experimentally.
    Źródło:
    Acta Physica Polonica A; 1994, 86, 1; 71-80
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Crossover from BCS to Bose-Einstein in Hubbard Model
    Autorzy:
    Pedersen, M. H.
    Schneider, T.
    Beck, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1955835.pdf
    Data publikacji:
    1997-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.27.+a
    71.10.Fd
    74.20.-z
    71.10.-w
    Opis:
    We generalize the standard attractive Hubbard, having an on-site pair creation operator Q$\text{}_{i}$ = a$\text{}_{i↑}$a$\text{}_{i↓}$, to one with n components Q$\text{}_{iα}$ = a$\text{}_{iα↑}$a$\text{}_{iα↓}$, α=1,2,...,n. In the limit n → ∞ we obtain the Ginzburg-Landau functional. On this basis we explore the crossover from weak (BCS) to strong coupling (Bose-Einstein condensation) superconductivity. The associated self-consistent equations for the Ginzburg-Landau parameters are similar to those of the T-matrix approach. The evolution of the band structure with increasing interaction strength is studied and correlated with the behavior of the pair propagator and the transition temperature. We find that the pairing interaction creates a new band which moves downwards in energy as the interaction strength increases and separates into a lower Hubbard band when the interaction strength becomes comparable to the band width. In the strong coupling regime, a third band with small spectral weight is also found in between the lower and upper Hubbard bands.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 2; 419-422
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Novel Method of Improving Electrical Properties of Thin PECVD Oxide Films by Fluorination of Silicon Surface Region by RIE in RF CF4 Plasma
    Autorzy:
    Kalisz, M.
    Głuszko, G.
    Beck, R. B.
    Powiązania:
    https://bibliotekanauki.pl/articles/308057.pdf
    Data publikacji:
    2010
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    capacitance-voltage characteristics
    current-voltage characteristics
    fluorine plasma
    radio frequency reactive ion etching
    Opis:
    This study describes a novel technique to form good quality low temperature oxide (< 350 C degree). Low temperature oxide was formed by N2O + SiH4:N2 plasma in a plasma enhanced chemical vapour deposition (PECVD) system on the silicon surface reactively etched in CF4 plasma (RIE - reactive ion etching). The fabricated oxide demonstrated excellent (for low temperature dielectric formation process) currentvoltage (I-V) characteristics, such as: low leakage current, high breakdown voltage and good reliability. Experimental results indicate that the proposed method of fluorine incorporation into the SiO2/Si inteface improves electrical parameters of MOS structures.
    Źródło:
    Journal of Telecommunications and Information Technology; 2010, 1; 20-24
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Effect of High Temperature Annealing on Fluorine Distribution Profile and Electro-Physical Properties of Thin Gate Oxide Fluorinated by Silicon Dioxide RIE in CF4 Plasma
    Autorzy:
    Kalisz, M.
    Głuszko, G.
    Beck, R. B.
    Powiązania:
    https://bibliotekanauki.pl/articles/308059.pdf
    Data publikacji:
    2010
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    capacitance-voltage characteristics
    current-voltage characteristics
    fluorine plasma
    high temperature annealing process
    radio frequency reactive ion etching
    Opis:
    This study describes the effects of high temperature annealing performed on structures fluorinated during initial silicon dioxide reactive ion etching (RIE) process in CF4 plasma prior to the plasma enhanced chemical vapour deposition (PECVD) of the final oxide. The obtained results show that fluorine incorporated at the PECVD oxide/Si interface during RIE is very stable even at high temperatures. Application of fluorination and high temperature annealing during oxide layer fabrication significantly improved the properties of the interface (Ditmb decreased), as well as those of the bulk of the oxide layer (Qeff decreased). The integrity of the oxide (higher Vbd ) and its uniformity (Vbd distribution) are also improved.
    Źródło:
    Journal of Telecommunications and Information Technology; 2010, 1; 25-28
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The role of fluorine-containing ultra-thin layer in controlling boron thermal diffusion into silicon
    Autorzy:
    Kalisz, M.
    Beck, R. B.
    Barcz, A.
    Ćwil, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/308657.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    fluorine
    reactive ion etching
    silicon fluoride
    boron thermal diffusion
    fluorocarbon plasma
    Opis:
    We have investigated the influence of silicon dioxide reactive ion etching (RIE) parameters on the composition of the polymer layer that is formed during this process on top of the etched layer, and finally, the role of this layer in high-temperature thermal diffusion of boron into silicon. The polymeric layer formed on the etched surface appeared to consist of fluorine and silicon fluoride (SiOF and SiF). Concentration of these components changes depending on the parameters of RIE process, i.e., rf power, gas pressure and etching time. The composition of this polymeric layer affects, in turn, boron thermal diffusion into silicon. With increasing rf power, the depth of boron junction is increased, while increasing time of etching process reduces boron diffusion into silicon.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 25-29
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Challenges in ultrathin oxide layers formation
    Autorzy:
    Beck, R.B.
    Jakubowski, A.
    Łukasiak, L.
    Korwin-Pawłowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/307646.pdf
    Data publikacji:
    2001
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    silicon technology
    oxidation
    PECVD
    RTO
    gate oxide
    ultrathin
    layers
    Opis:
    In near future silicon technology cannot do without ultrathin oxides, as it becomes clear from the "Roadmap'2000". Formation, however, of such layers, creates a lot of technical and technological problems. The aim of this paper is to present the technological methods, that potentially can be used for formation of ultrathin oxide layers for next generations ICs. The methods are briefly described and their pros and cons are discussed.
    Źródło:
    Journal of Telecommunications and Information Technology; 2001, 1; 27-34
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ogrody hortiterapeutyczne dla osób dorosłych z autyzmem - zasady projektowania
    Horticultural therapy gardens for adults with autism - guidelines for designing
    Autorzy:
    Kalina-Gagnelid, A.
    Kosiacka-Beck, E.
    Myszka-Stąpór, I.
    Skibińska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2184903.pdf
    Data publikacji:
    2016
    Wydawca:
    Uniwersytet Przyrodniczy w Lublinie. Wydawnictwo Uniwersytetu Przyrodniczego w Lublinie
    Tematy:
    choroby czlowieka
    autyzm
    ludzie chorzy
    osoby dorosle
    hortiterapia
    ogrody terapeutyczne
    projektowanie ogrodow
    Źródło:
    Annales Universitatis Mariae Curie-Skłodowska. Sectio EEE: Horticultura; 2016, 26, 2; 13-25
    1233-2127
    Pojawia się w:
    Annales Universitatis Mariae Curie-Skłodowska. Sectio EEE: Horticultura
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Applying shallow nitrogen implantation from rf plasma for dual gate oxide technology
    Autorzy:
    Bieniek, T.
    Beck, R. B.
    Jakubowski, A.
    Głuszko, G.
    Konarski, P.
    Ćwil, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/308685.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    CMOS
    dual gate oxide
    gate stack
    oxynitride
    plasma implantation
    Opis:
    The goal of this work was to study nitrogen implantation from plasma with the aim of applying it in dual gate oxide technology and to examine the influence of the rf power of plasma and that of oxidation type. The obtained structures were examined by means of ellipsometry, SIMS and electrical characterization methods.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 3-8
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Composition and electrical properties of ultra-thin SiOxNy layers formed by rf plasma nitrogen implantation/plasma oxidation processes
    Autorzy:
    Bieniek, T.
    Beck, R. B.
    Jakubowski, A.
    Konarski, P.
    Ćwil, M.
    Hoffman, P.
    Schmeißer, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/308689.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    CMOS
    gate stack
    oxynitride
    plasma implantation
    Opis:
    Experiments presented in this work are a summary of the study that examines the possibility of fabrication of oxynitride layers for Si structures by nitrogen implantation from rf plasma only or nitrogen implantation from rf plasma followed immediately by plasma oxidation process. The obtained layers were characterized by means of: ellipsometry, XPS and ULE-SIMS. The results of electrical characterization of NMOS Al-gate test structures fabricated with the investigated layers used as gate dielectric, are also discussed.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 9-15
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of composition of ultra-thin silicon oxynitride layers fabricated by PECVD and ultrashallow rf plasma ion implantation
    Autorzy:
    Mroczyński, R.
    Bieniek, T.
    Beck, R. B.
    Ćwil, M.
    Konarski, P.
    Hoffman, P.
    Schmeißer, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/308687.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    ultra-thin dielectrics
    oxynitride
    SIMS
    XPS
    PECVD
    Opis:
    In this paper differences in chemical composition of ultra-thin silicon oxynitride layers fabricated in planar rf plasma reactor are studied. The ultra-thin dielectric layers were obtained in the same reactor by two different methods: ultrashallow nitrogen implantation followed by plasma oxidation and plasma enhanced chemical vapour deposition (PECVD). Chemical composition of silicon oxynitride layers was investigated by means of X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The spectroscopic ellipsometry was used to determine both the thickness and refractive index of the obtained layers. The XPS measurements show considerable differences between the composition of the fabricated layers using each of the above mentioned methods. The SIMS analysis confirms XPS results and indicates differences in nitrogen distribution.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 20-24
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The influence of annealing (900?C) of ultra-thin PECVD silicon oxynitride layers
    Autorzy:
    Mroczyński, R.
    Głuszko, G.
    Beck, R. B.
    Jakubowski, A.
    Ćwil, M.
    Konarski, P.
    Hoffman, P.
    Schmeißer, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/308691.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    ultra-thin dielectrics
    silicon oxynitride
    PECVD
    CMOS
    Opis:
    This work reports on changes in the properties of ultra-thin PECVD silicon oxynitride layers after high- temperature treatment. Possible changes in the structure, composition and electrophysical properties were investigated by means of spectroscopic ellipsometry, XPS, SIMS and electrical characterization methods (C-V, I-V and charge- pumping). The XPS measurements show that SiOxNy is the dominant phase in the ultra-thin layer and high-temperature annealing results in further increase of the oxynitride phase up to 70% of the whole layer. Despite comparable thickness, SIMS measurement indicates a densification of the annealed layer, because sputtering time is increased. It suggests complex changes of physical and chemical properties of the investigated layers taking place during high-temperature annealing. The C-V curves of annealed layers exhibit less frequency dispersion, their leakage and charge-pumping currents are lower when compared to those of as-deposited layers, proving improvement in the gate structure trapping properties due to the annealing process.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 3; 16-19
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Polska polityka zagraniczna w latach 1926-1932
    Autorzy:
    Beck, Józef.
    Współwytwórcy:
    Nowak-Kiełbikowa, Maria ( -2013). Recenzja
    Pułaski, Michał. Recenzja
    Wynot, Edward D. Jr. Recenzja
    Cienciała, Anna M. Opracowanie
    Data publikacji:
    1990
    Wydawca:
    Paryż : Instytut Literacki
    Tematy:
    Beck, Józef (1894-1944)
    Opis:
    Na karcie tytułowj błędna chronologia tekstów, prawidłowa: lata 1926-1939.
    Józef Beck o polskiej polityce zagranicznej.
    Dostawca treści:
    Bibliografia CBW
    Książka
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