Autor: Bauer, P. H. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: New challenges in dynamical systems: the networked case
Autorzy:: Bauer, P. H.
Powiązania:: https://bibliotekanauki.pl/articles/907913.pdf
Data publikacji:: 2008
Wydawca:: Uniwersytet Zielonogórski. Oficyna Wydawnicza
Tematy:: kontrola przeciążeń
sieć komputerowa
sieć sensorowa
synchronizacja
networked systems
sensor networks
swarms
congestion control
synchronization
Opis:: This paper describes new technical challenges that arise from networking dynamical systems. In particular, the paper takes a look at the underlying phenomena and the resulting modeling problems that arise in such systems. Special emphasis is placed on the problem of synchronization, since this problem has not received as much attention in the literature as the phenomena of packet drop, delays, etc. The paper then discusses challenges arising in prominent areas such as congestion control, sensor networks, as well as vehicle networks and swarms.
Źródło:: International Journal of Applied Mathematics and Computer Science; 2008, 18, 3; 271-277
1641-876X
2083-8492
Pojawia się w:: International Journal of Applied Mathematics and Computer Science
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: High Resolution X-Ray Diffraction Investigations of Si/SiGe Quantum Well Structures and Si/Ge Short-Period Superlattices
Autorzy:: Bauer, G.
Koppensteiner, E.
Hamberger, P.
Nützel, J.
Abstreiter, G.
Kibbel, H.
Presting, H.
Kasper, E.
Powiązania:: https://bibliotekanauki.pl/articles/1929613.pdf
Data publikacji:: 1993-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.65.+g
61.10.-i
68.55.Jk
Opis:: Double crystal and triple axis X-ray diffractometry was used to characterize the structural properties of Si/Si$\text{}_{1-x}$Ge$\text{}_{x}$ multiquantum well samples grown pseudomorphically on Si(001) substrates, as well as of short-period Si$\text{}_{9}$Ge$\text{}_{6}$ superlattices grown by molecular beam epitaxy on rather thick step-graded Si$\text{}_{1-x}$Ge$\text{}_{x}$ (0 < x < 0.4, 650 nm thick) buffers followed by 550 nm Si$\text{}_{0.6}$ Ge$\text{}_{0.4}$ layers. Reciprocal space maps around the (004) and (224) reciprocal lattice points yield direct information on the strain status of the layers in the heterostructure systems and in particular on the amount of strain relaxation.
Źródło:: Acta Physica Polonica A; 1993, 84, 3; 475-489
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Bychkov-Rashba Effect and g-Factor Tuning in Modulation Doped SiGe Quantum Wells
Autorzy:: Malissa, H.
Jantsch, W.
Mühlberger, M.
Schäffler, F.
Wilamowski, Z.
Draxler, M.
Bauer, P.
Powiązania:: https://bibliotekanauki.pl/articles/2038126.pdf
Data publikacji:: 2004-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.21.Fg
85.75.-d
Opis:: We investigate the spin resonance of electrons in one-sided modulation doped Si$\text{}_{1-x}$Ge$\text{}_{x}$ (x=0-10%)) quantum wells defined by Si$\text{}_{0.75}$Ge$\text{}_{0.25}$ barriers. In such structures, the Bychkov-Rashba effect induces an effective magnetic field in the quantum well layer which causes anisotropy of both the g-factor and the spin coherence time. Evaluation of the Rashba coefficient as a function of x yields a monotonic increase. For x=5% the shift in the resonance field exceeds the ESR linewidth already, demonstrating the possibility to use this effect for g-factor tuning to select individual spins in an ensemble.
Źródło:: Acta Physica Polonica A; 2004, 105, 6; 585-590
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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