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Wyszukujesz frazę "Balakrishnan, T." wg kryterium: Autor


Wyświetlanie 1-4 z 4
Tytuł:
Hydrothermal fabrication of CeVO4 nanoflowers assisted effective photocatalytic mineralization of aqueous methylene blue solution
Autorzy:
Muthuvel, I.
Jayasri, U.
Gowthami, K.
Kumar, N. Dinesh
Thirunarayanan, G.
Balakrishnan, K.
Rajachandrasekar, T.
Powiązania:
https://bibliotekanauki.pl/articles/1031461.pdf
Data publikacji:
2020
Wydawca:
Przedsiębiorstwo Wydawnictw Naukowych Darwin / Scientific Publishing House DARWIN
Tematy:
CeVO4
Cerium vanadate
Methylene Blue
Photocatalyst
Wastewater treatment
Opis:
A tetragonal zircon type cerium vanadate (CeVO4) photocatalyst was successfully synthesized hydrothermal method using Ce(NH4)2(NO3)6 and NH4VO3. The products were characterized using the FT-IR, XRD, FE-SEM and UV-DRS. The XRD results show that crystallite size of cerium vanadate is 27.2 nm. The effect of operational parameters such as effect of pH, catalyst suspension, initial dye concentration and reusability were observed. Hence the catalyst can be reused for continuous treatment of wastewater.
Źródło:
World Scientific News; 2020, 142; 103-119
2392-2192
Pojawia się w:
World Scientific News
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fall coloring of graphs I
Autorzy:
Balakrishnan, Rangaswami
Kavaskar, T.
Powiązania:
https://bibliotekanauki.pl/articles/744026.pdf
Data publikacji:
2010
Wydawca:
Uniwersytet Zielonogórski. Wydział Matematyki, Informatyki i Ekonometrii
Tematy:
fall coloring of graphs
non-fall colorable graphs
Opis:
A fall coloring of a graph G is a proper coloring of the vertex set of G such that every vertex of G is a color dominating vertex in G (that is, it has at least one neighbor in each of the other color classes). The fall coloring number $χ_f(G)$ of G is the minimum size of a fall color partition of G (when it exists). Trivially, for any graph G, $χ(G) ≤ χ_f(G)$. In this paper, we show the existence of an infinite family of graphs G with prescribed values for χ(G) and $χ_f(G)$. We also obtain the smallest non-fall colorable graphs with a given minimum degree δ and determine their number. These answer two of the questions raised by Dunbar et al.
Źródło:
Discussiones Mathematicae Graph Theory; 2010, 30, 3; 385-391
2083-5892
Pojawia się w:
Discussiones Mathematicae Graph Theory
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Distribution and Seasonal Variation of Heavy Metals in Sediments of Muthupet Lagoon, Southeast Coast of India
Autorzy:
Balakrishnan, T.
Sundaramanickam, A.
Shekhar, S.
Balasubramanian, T.
Powiązania:
https://bibliotekanauki.pl/articles/125289.pdf
Data publikacji:
2015
Wydawca:
Polskie Towarzystwo Inżynierii Ekologicznej
Tematy:
seasonal variation
heavy metals
Muthupet lagoon
Opis:
This study deals with seasonal variation of heavy metals in sediments of Muthupet lagoon, Southeast coast of India from September 2011 to August 2012. The bulk sediments were association with sand, silt and clay. Geoaccumulation index (lgeo) was used to quantitatively assess the influences of heavy metal pollution. Heavy metals were determined by using Inductively Coupled Plasma Optical Emission Spectrometer (ICP-OES) and the results were compared to permissible limits of WHO/USEPA. The minimum concentration of heavy metals in all the stations were found during the post monsoon and summer seasons and the maximum concentration of heavy metals in all the stations were found during the premonsoon and monsoon seasons. The reason for the pollution was land drainage, irrigation through channels and municipal wastes and also the peak agricultural activities due to the release of fresh water from reservoirs. Among all the metals iron was found to be maximum in all the stations in postmonsoon and summer season followed by magnesium and manganese. Apart from these three metal, all other six metals are recorded in moderate range. The reason for the high concentration of these metals are anthropogenic activity, agriculture, aquaculture and the rivers regular in and out flow throughout the study duration in the lagoon area.
Źródło:
Journal of Ecological Engineering; 2015, 16, 3; 49-60
2299-8993
Pojawia się w:
Journal of Ecological Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors
Autorzy:
Morath, Christian P.
Casias, Lilian K.
Umana-Membreno, Gilberto A.
Webster, Preston T.
Grant, Perry C.
Maestas, Diana
Cowan, Vincent M.
Faraone, Lorenzo
Krishna, Sanjay
Balakrishnan, Ganesh
Powiązania:
https://bibliotekanauki.pl/articles/2204224.pdf
Data publikacji:
2023
Wydawca:
Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
Tematy:
III-V infrared detectors
Bulk InAsSb
InAsSb/InAs superlattice
mobility
carrier concentration
Opis:
The sensitivity of III-V-based infrared detectors is critically dependent upon the carrier concentration and mobility of the absorber layer, and thus, accurate knowledge of each is required to design structures for maximum detector performance. Here, measurements of the bulk in-plane resistivity, in-plane mobility, and carrier concentration as a function of temperature are reported for non-intentionally doped and Si-doped mid-wave infrared InAs₀.₉₁Sb₀.₀₉ alloy and InAs/InAs₀.₆₅Sb₀.₃₅ type-II superlattice materials grown on GaSb substrates. Standard temperature- and magnetic-field-dependent resistivity and the Hall measurements on mesa samples in the van der Pauw configuration are performed, and multicarrier fitting and modelling are used to isolate transport of each carrier species. The results show that up to 5 carrier species of the surface, interface and bulk variety contribute to conduction, with bulk electron and hole mobility up to 2·10⁵ cm²/V s and 8·10³ cm²/V s, respectively and background dopant concentration levels were between 10¹⁴ and 10¹⁵ cm¯³. The in-plane mobility temperatures dependence is determined and trends of each carrier species with temperature and dose are analysed.
Źródło:
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144554
1230-3402
Pojawia się w:
Opto-Electronics Review
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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