Autor: Badura, Mikołaj - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: MOVPE Technology of Fe-Compensated InP Layers for the Quantum Cascade Laser Applications
Autorzy:: Badura, Mikołaj
Powiązania:: https://bibliotekanauki.pl/articles/226294.pdf
Data publikacji:: 2020
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: MOVPE technology
optoelectronics
quantum cascade lasers
epitaxy
Opis:: Quantum cascade laser is one of the most sophisticated semiconductor devices. Its technology requires extremely high precision and layers quality. Device performance is limited by thermal extraction form laser core. One of solutions is to apply highly resistivity epitaxial material acting as insulating layer on top of the QCL. Present work describes consequent steps of elaboration of MOVPE technology of Fe-compensated InP layers for further applications in quantum cascade lasers.
Źródło:: International Journal of Electronics and Telecommunications; 2020, 66, 2; 389-394
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Photoluminescence and Raman spectroscopies as an optical approach of stress determining in MOVPE grown quantum cascade laser structures
Autorzy:: Łozińska, Adriana
Badura, Mikołaj
Jadczak, Joanna
Bielak, Katarzyna
Ściana, Beata
Powiązania:: https://bibliotekanauki.pl/articles/174205.pdf
Data publikacji:: 2020
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: QCL core
quantum cascade laser
photoluminescence
Raman spectroscopy
Opis:: In the presented work, an optical approach of stress determining in metalorganic vapor phase epitaxy (MOVPE) grown quantum cascade laser (QCL) structures was reported. In the case of such sophisticated structures containing hundreds of thin layers, it is important to minimize the stress generated in the QCL core. Techniques enabling determination of stress in such thin layers as those described in the article are photoluminescence and Raman spectroscopies. Based on Raman shift or changes in photoluminescence signal, it is possible to analyze stress occurring in the structure.
Źródło:: Optica Applicata; 2020, 50, 2; 289-299
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE
Autorzy:: Łozińska, Adriana
Badura, Mikołaj
Bielak, Katarzyna
Ściana, Beata
Tłaczała, Marek
Powiązania:: https://bibliotekanauki.pl/articles/174236.pdf
Data publikacji:: 2020
Wydawca:: Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
Tematy:: photoluminescence
quantum cascade lasers
MOVPE
metalorganic vapour phase epitaxy
Opis:: In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In_0.53Ga_0.47As/Al_0.48In_0.52As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures.The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.
Źródło:: Optica Applicata; 2020, 50, 2; 251-256
0078-5466
1899-7015
Pojawia się w:: Optica Applicata
Dostawca treści:: Biblioteka Nauki

Artykuł

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